SBIR Phase I: All-Metal Giant Magnetoresistive Memory

这个小型企业创新研究第一阶段项目将开发基于巨磁阻（GMR）的全金属支持电子产品，用于纳米级，非易失性，固态随机存取存储器。 硅技术，单独或与GMR存储器元件组合，不能匹配全金属存储器的密度或低成本，因为半导体缩放的固有限制，并且因为全金属技术所需的掩模步骤较少。 只有全金属固态存储（GMR存储器和GMR电路的结合）才能实现磁电子芯片的全部潜力。 该提案的通用电子产品的核心是一种新型的多功能GMR设备，称为转频器（TM）。 研究目标是在全金属芯片上开发和演示基于transpinner的电路。 本研究将设计巨磁阻元件，模拟与模拟其在电路上的耦合，制作与测试基于巨磁阻的选择与感测电路，并设计一个完整的1Kbit全金属磁性记忆体晶片。全金属固态芯片的目标市场不仅包括SRAM、DRAM和Flash等半导体存储器，还包括机械存储和通用电子产品。

This Small Business Innovation Research Phase I project will develop all-metal support electronics that are based on giant magnetoresistance (GMR) for a nanoscale, nonvolatile, solid-state random-access memory. Silicon technology, alone or in combination with GMR memory elements, cannot match either the density or low cost of all-metal memory because of inherent limits on scaling of semiconductors and because of the fewer masking steps required for all-metal technology. Only all-metal solid-state storage (the combination of GMR memory and GMR circuitry) can realize the full potential of magnetoelectronic chips. At the heart of the proposal's general-purpose electronics is a novel multifunctional GMR device called a transpinnor (TM). The research objectives are to develop and demonstrate transpinnor-based circuitry on the all-metal chip. The research will design the GMR elements, model and simulate their coupling on the circuit, fabricate and test GMR based selection and sense circuitry, and design a complete 1 Kbit all-metal magnetic memory chip. The results are anticipated to demonstrate functionality of GMR circuitry on an integrated chip.The addressable markets for all-metal solid-state chips include not only semiconductor memories such as SRAM, DRAM and Flash, but mechanical storage and general-purpose electronics as well.