SBIR Phase I: Development of a Hypervelocity Neutral Beam Tool for Selective, Damage-Free and Anisotropic Etching of Silicon Dioxide

物理科学公司将展示二氧化硅的选择性各向异性蚀刻工具，使用基于其专利快速原子取样器测试（FAST）技术的低温氟原子束。 FAST光源的能量范围可实现高效、无损伤的SiO2蚀刻。 目标的各向异性、低损伤能力与半导体工业协会路线图非常相关，该路线图将中性流处理定义为ULSI器件制造中在二氧化硅中蚀刻0.2？m以下特征的关键技术。

Physical Sciences Inc. will demonstrate a selective anisotropic etching tool for silicon dioxide, using a hypothermal Flourine atom beam based upon its patented Fast Atom Sampler Test (FAST) technology. The energy range of the FAST source enables highly efficient, damage-free etching of SiO2. The anisotropic, low damage capability targeted is very relevant to the Semiconductor Industry Association roadmap, which defines neutral stream processing as a critical technology for etching sub 0.2 ªm features in silicon dioxide in the fabrication of ULSI devices.