SBIR Phase I: Development of a Hypervelocity Neutral Beam Tool for Selective, Damage-Free and Anisotropic Etching of Silicon Dioxide

物理科学公司将展示一种选择性的二氧化硅各向异性蚀刻工具，该工具使用基于其专利的快速原子采样器测试(FAST)技术的低温氟原子束。快速光源的能量范围实现了高效、无损伤的二氧化硅刻蚀。所针对的各向异性、低损伤能力与半导体工业协会的路线图非常相关，该路线图将中性流处理定义为在ULSI器件制造过程中在二氧化硅中刻蚀亚0.2？m特征的关键技术。

Physical Sciences Inc. will demonstrate a selective anisotropic etching tool for silicon dioxide, using a hypothermal Flourine atom beam based upon its patented Fast Atom Sampler Test (FAST) technology. The energy range of the FAST source enables highly efficient, damage-free etching of SiO2. The anisotropic, low damage capability targeted is very relevant to the Semiconductor Industry Association roadmap, which defines neutral stream processing as a critical technology for etching sub 0.2 ªm features in silicon dioxide in the fabrication of ULSI devices.