SBIR Phase I: Development of a Hypervelocity Neutral Beam Tool for Selective, Damage-Free and Anisotropic Etching of Silicon Dioxide

SBIR 第一阶段：开发超高速中性束工具，用于二氧化硅的选择性、无损伤和各向异性蚀刻

• 批准号: 9761497
• 负责人: David Oakes
• 金额: $ 9.99万
• 依托单位: Physical Sciences Incorporated (PSI)
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-01-01 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9761497&HistoricalAwards=false
• 关键词: SBIR; Phase; Development; Hypervelocity; Neutral

Physical Sciences Inc. will demonstrate a selective anisotropic etching tool for silicon dioxide, using a hypothermal Flourine atom beam based upon its patented Fast Atom Sampler Test (FAST) technology. The energy range of the FAST source enables highly efficient, damage-free etching of SiO2. The anisotropic, low damage capability targeted is very relevant to the Semiconductor Industry Association roadmap, which defines neutral stream processing as a critical technology for etching sub 0.2 ªm features in silicon dioxide in the fabrication of ULSI devices.

物理科学公司将展示二氧化硅的选择性各向异性蚀刻工具，使用基于其专利的快速原子采样器测试（Fast）技术的低温氟原子束。FAST源的能量范围能够实现高效，无损伤的SiO2蚀刻。各向异性、低损伤能力的目标与半导体工业协会路线图非常相关，该路线图将中性流处理定义为在ULSI器件制造中蚀刻二氧化硅中低于0.2ªm特征的关键技术。