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Nanoscale Controlled SrRu03-Insulator-SrRu03 Epitaxial Ferromagnetic Heterostructures for the Study of Spin Polarized Tunneling

Nanoscale Controlled SrRu03-Insulator-SrRu03 Epitaxial Ferromagnetic Heterostructures for the Study of Spin Polarized Tunneling
用于自旋极化隧道研究的纳米级控制SrRu03-绝缘体-SrRu03外延铁磁异质结构
批准号:
9802444
负责人:
Chang-Beom Eom
金额:
$39.36万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-04-15 至 2001-11-30

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中文摘要
翻译
9802444这项大学/工业合作计划旨在加深对氧化物铁磁-绝缘体-铁磁三层结中的势垒现象/物理、界面效应和(Sr,Ca)RuO_3的电子结构的了解。杜克大学的Eom Chang-beom教授正在与IBM Thomas J.Watson研究中心的Jonathan Z.Sun合作。该方法包括研究和控制各层的生长机制和磁畴结构,以及研究结性能以获得可靠的低缺陷密度的界面和绝缘层。该项目还讨论了与自旋有关的跨越势垒区域的输运机制,结磁阻的偏置和温度依赖,以及输运行为、势垒合成/加工条件和化学成分之间的关系。该项目由DMR电子材料计划和MPS OMA(多学科活动办公室)共同支持。%该项目致力于具有高度技术相关性的材料科学主题领域的基础研究问题。这项研究将在基础水平上为电子/磁性设备的重要方面贡献基本的材料科学知识。现在有了实验工具,可以对基本表面和界面过程进行原子水平的观察,如果更好地了解这些过程,就可以在基础和技术领域取得进展。从研究中获得的基本知识和理解有望为设计和生产改进的材料和材料组合提供基本的理解和基础,从而有助于提高先进器件和电路的性能和稳定性。该计划的一个重要特点是通过培训学生在一个具有根本和技术意义的领域将研究和教育结合起来,并通过项目的目标方面为学生提供一个重要的机会,让他们体验学术和工业研究的方法和环境。***
英文摘要
9802444 Eom This University/Industry collaborative GOALI proposal aims for greater understanding of barrier phenomena/physics in oxide ferromagnetic-insulator-ferromagnetic trilayer junctions, interfacial effects, and the electronic structure of (Sr,Ca)RuO3. Professor Chang-Beom Eom at Duke University is collaborating with Jonathan Z. Sun at the IBM Thomas J. Watson Research Center. The approach involves the study and control of the growth mechanism and domain structures of individual layers, and the investigation of junction properties to obtain reliable and low defect density interfaces and insulating layers. The project also addresses the mechanism for spin-dependent transport across the barrier region, the bias and temperature dependence of junction magnetoresistance, and the relationships between transport behavior, barrier synthesis/processing conditions, and chemical compositions. The project is co-supported by the DMR Electronic Materials Program and the MPS OMA(Office of Multidisciplinary Activities). %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/magnetic devices. Experimental tools are now available to allow atomic level observation of basic surface and interface processes which when better understood will allow advances in both fundamental and technological arenas. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area, and in providing an impor tant opportunity through the GOALI aspect of the project for students to experience both academic and industrial research approaches and environments. ***
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DMREF: Antiperovskite Interfaces for Materials Design
  • 批准号:
    1629270
  • 项目类别:
    Standard Grant
  • 资助金额:
    $120.0万
  • 财政年份:
    2016
  • 负责人:
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  • 依托单位:
DMREF: Multifunctional Interfacial Materials by Design
  • 批准号:
    1234096
  • 项目类别:
    Standard Grant
  • 资助金额:
    $160.0万
  • 财政年份:
    2012
  • 负责人:
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  • 依托单位:
FRG: Switchable Two-Dimensional Materials at Oxide Hetero-Interfaces
  • 批准号:
    0906443
  • 项目类别:
    Standard Grant
  • 资助金额:
    $120.0万
  • 财政年份:
    2009
  • 负责人:
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  • 依托单位:
NIRT: Active Nanostructures with Giant Piezo-response
  • 批准号:
    0708759
  • 项目类别:
    Standard Grant
  • 资助金额:
    $135.0万
  • 财政年份:
    2007
  • 负责人:
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  • 依托单位:
海外基金