Nanoscale Controlled SrRu03-Insulator-SrRu03 Epitaxial Ferromagnetic Heterostructures for the Study of Spin Polarized Tunneling
Nanoscale Controlled SrRu03-Insulator-SrRu03 Epitaxial Ferromagnetic Heterostructures for the Study of Spin Polarized Tunneling
批准号:
9802444
负责人:
Chang-Beom Eom
金额:
$39.36万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-04-15 至 2001-11-30
中文摘要
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英文摘要
9802444 Eom This University/Industry collaborative GOALI proposal aims for greater understanding of barrier phenomena/physics in oxide ferromagnetic-insulator-ferromagnetic trilayer junctions, interfacial effects, and the electronic structure of (Sr,Ca)RuO3. Professor Chang-Beom Eom at Duke University is collaborating with Jonathan Z. Sun at the IBM Thomas J. Watson Research Center. The approach involves the study and control of the growth mechanism and domain structures of individual layers, and the investigation of junction properties to obtain reliable and low defect density interfaces and insulating layers. The project also addresses the mechanism for spin-dependent transport across the barrier region, the bias and temperature dependence of junction magnetoresistance, and the relationships between transport behavior, barrier synthesis/processing conditions, and chemical compositions. The project is co-supported by the DMR Electronic Materials Program and the MPS OMA(Office of Multidisciplinary Activities). %%% The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/magnetic devices. Experimental tools are now available to allow atomic level observation of basic surface and interface processes which when better understood will allow advances in both fundamental and technological arenas. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area, and in providing an impor tant opportunity through the GOALI aspect of the project for students to experience both academic and industrial research approaches and environments. ***
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