NIRT: Epitaxial Magnetic Oxide Structures for Nanoscale Spin Devices

0210449em该提案是在纳米尺度科学与工程计划（NSF 01-157）的NIRT类别中收到的。该提案的重点是理解纳米尺度上控制自旋输运的内在现象，以及为未来的自旋控制磁电子设备开发操纵自旋输运的新方法。它解决了当前下一代电子设备研究中最令人兴奋的一个方面：操纵自旋，而不仅仅是电荷。这些磁电子器件的优点包括非易失性，在静态存储元件中更快地切换，以及由于器件结构更简单而导致的更高密度。随着技术将器件尺寸推向纳米级，这些问题变得更加重要，因为纳米级会出现新的基本物理效应，改变自旋输运、高频动力学和开关时间。在纳米尺度上理解这些问题需要单晶磁性异质结构，具有原子锐界面，并以纳米尺寸为图案。本文研究了在原子层控制下生长的外延磁性氧化物纳米结构中的纳米级自旋输运现象，该结构的磁性、电子和界面性质可以随意调节。在外延系统中，具有明确电子、磁性和形态特征的层与原子层控制定位在一起，用于解决磁性纳米结构中的关键基本问题。本研究项目包括：1)利用脉冲激光沉积技术设计、生长和表征具有原子层控制的外延磁性氧化物异质结构，并进行现场实时结构分析；2)高分辨率和分析TEM来确定界面的原子结构和电子性质；3) 50 nm以下新型磁异质结构的纳米尺度图像化；4)扫描探针测量地形和局部电子特性；5)以研究方向为载体，重点向青少年介绍现代、多学科的科学技术。这个多学科、多大学/行业的团队由材料科学、物理学、电气工程和器件开发领域的成员组成。研究、教育和推广都遵循纳米尺度结构、新现象和自旋输运控制的主题。这项工作将为理解纳米级自旋控制器件中的新现象奠定科学基础。pi的工业和多学科互动将非常有利于推进研究和教育学生。这项研究还将为纳米级系统（如铁电体和氧化物半导体集成）的原子尺度控制提供基本指导，这些系统对下一代技术非常重要。

0210449EomThis proposal was received in response to the Nanoscale Science and Engineering Initiative, Program Solicitation NSF 01-157, in the NIRT category. The proposal focuses on understanding intrinsic phenomena governing spin transport at the nanoscale, and the development of new methods for its manipulation for future spin-controlled, magneto-electronic, devices. It addresses one of the most exciting aspects of current research on next-generation electronic devices: the manipulation of spin, rather than only electrical charge. The advantages of these magnetoelectronic devices include nonvolatility, faster switching in static memory elements, and higher density due to a simpler device structure. These issues become even more important as technology drives device sizes toward the nanoscale, where new fundamental physical effects emerge that alter spin transport, as well as high-frequency dynamics and switching times. An understanding of these issues at the nanoscale requires single-crystal magnetic heterostructures with atomically-sharp interfaces, patterned to nanometer dimensions. This proposal probes nanoscale spin transport phenomena in epitaxial magnetic oxide nanostructures grown with atomic-layer control, whose magnetic, electronic, and interfacial properties are tuned at will. Layers with defined electronic, magnetic, and morphological characteristics positioned with atomic-layer control in epitaxial systems are used to address crucial fundamental questions in magnetic nanostructures.This research program consists of 1) design, growth, and characterization of epitaxial magnetic oxide heterostructures with atomic layer control by pulsed laser deposition with in-situ real-time structural analysis 2) high-resolution and analytical TEM to determine atomic structure and electronic properties of the interfaces; 3) nanoscale patterning of novel magnetic heterostructures below 50 nm; 4) scanning probe measurements of topography and local electronic properties; 5) education and outreach efforts with a focus on introducing young people to modern, multidisciplinary science and technology, using the research direction as a vehicle. The multidisciplinary, multiuniversity/industry team consists of members working in Materials Science, Physics, Electrical Engineering, and device development. Research, education, and outreach all follow the theme of nanoscale structures, novel phenomena, and spin transport control. This work will build a scientific foundation for the understanding of new phenomena in nanoscale spin-controlled devices. The PIs industrial and multidisciplinary interactions will be very beneficial in advancing research as well as in educating students. This study will also provide fundamental guidelines in the atomic-scale control of nanoscale systems such as ferroelectrics and oxide-semiconductor integration that are important for next-generation technology.