NIRT: Epitaxial Magnetic Oxide Structures for Nanoscale Spin Devices

0210449 Eom该提案是响应纳米科学与工程倡议，计划征求NSF 01-157，在NIRT类别。该提案的重点是了解在纳米尺度上控制自旋输运的内在现象，以及为未来的自旋控制磁电子器件开发新的操纵方法。它解决了当前下一代电子设备研究中最令人兴奋的方面之一：操纵自旋，而不仅仅是电荷。这些磁电子器件的优点包括非易失性、静态存储元件的更快切换以及由于更简单的器件结构而具有更高的密度。随着技术将器件尺寸推向纳米级，这些问题变得更加重要，其中出现了新的基本物理效应，改变了自旋输运，以及高频动力学和开关时间。在纳米尺度上理解这些问题需要具有原子级尖锐界面的单晶磁性异质结构，图案化到纳米尺寸。该提案探讨了原子层控制生长的外延磁性氧化物纳米结构中的纳米级自旋输运现象，其磁性，电子和界面特性可以随意调节。在外延系统中，具有定义的电子，磁性和形态特征的层被用于解决磁性纳米结构中的关键基础问题。该研究计划包括1）设计，生长，和表征外延磁性氧化物异质结构与原子层控制的脉冲激光沉积与原位实时结构分析2）高-分辨率和分析TEM以确定界面的原子结构和电子性质; 3）低于50 nm的新型磁性异质结构的纳米级图案化; 4）形貌和局部电子性质的扫描探针测量; 5）教育和外联工作，重点是利用研究方向作为工具，向年轻人介绍现代多学科科学和技术。多学科，多大学/行业团队由材料科学，物理，电气工程和设备开发工作的成员组成。研究，教育和推广都遵循纳米结构，新现象和自旋输运控制的主题。这项工作将为理解纳米级自旋控制器件中的新现象奠定科学基础。PI工业和多学科的相互作用将在推进研究以及教育学生非常有益。这项研究还将为纳米级系统的原子尺度控制提供基本指导方针，例如对下一代技术非常重要的铁电体和氧化物半导体集成。

0210449EomThis proposal was received in response to the Nanoscale Science and Engineering Initiative, Program Solicitation NSF 01-157, in the NIRT category. The proposal focuses on understanding intrinsic phenomena governing spin transport at the nanoscale, and the development of new methods for its manipulation for future spin-controlled, magneto-electronic, devices. It addresses one of the most exciting aspects of current research on next-generation electronic devices: the manipulation of spin, rather than only electrical charge. The advantages of these magnetoelectronic devices include nonvolatility, faster switching in static memory elements, and higher density due to a simpler device structure. These issues become even more important as technology drives device sizes toward the nanoscale, where new fundamental physical effects emerge that alter spin transport, as well as high-frequency dynamics and switching times. An understanding of these issues at the nanoscale requires single-crystal magnetic heterostructures with atomically-sharp interfaces, patterned to nanometer dimensions. This proposal probes nanoscale spin transport phenomena in epitaxial magnetic oxide nanostructures grown with atomic-layer control, whose magnetic, electronic, and interfacial properties are tuned at will. Layers with defined electronic, magnetic, and morphological characteristics positioned with atomic-layer control in epitaxial systems are used to address crucial fundamental questions in magnetic nanostructures.This research program consists of 1) design, growth, and characterization of epitaxial magnetic oxide heterostructures with atomic layer control by pulsed laser deposition with in-situ real-time structural analysis 2) high-resolution and analytical TEM to determine atomic structure and electronic properties of the interfaces; 3) nanoscale patterning of novel magnetic heterostructures below 50 nm; 4) scanning probe measurements of topography and local electronic properties; 5) education and outreach efforts with a focus on introducing young people to modern, multidisciplinary science and technology, using the research direction as a vehicle. The multidisciplinary, multiuniversity/industry team consists of members working in Materials Science, Physics, Electrical Engineering, and device development. Research, education, and outreach all follow the theme of nanoscale structures, novel phenomena, and spin transport control. This work will build a scientific foundation for the understanding of new phenomena in nanoscale spin-controlled devices. The PIs industrial and multidisciplinary interactions will be very beneficial in advancing research as well as in educating students. This study will also provide fundamental guidelines in the atomic-scale control of nanoscale systems such as ferroelectrics and oxide-semiconductor integration that are important for next-generation technology.