Submicron Scale Studies of Optical Anisotropy in Thin Films

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9802634 Hsu This project aims to use scanning optical microscopy (NSOM) for the characterization of submicron inhomogeneities in several materials systems, including heteroepitaxial quantum dots, Si3N4 membranes, GeSi buffer layers, SrRuO3, YBCO, and copolymer films. The goal of the project is to gain detailed understanding of the effect of defects and inhomogeneous strain on electrical(transport) and optical anisotropies, potentially providing valuable information to aid in the tailoring of materials properties for particular functions/applications. The approach is to map optical anisotropies with sub wavelength resolution using NSOM to determine the role of strain and defects in producing these anisotropies, and then to correlate these strains with growth/synthesis parameters for development of understanding of their origins and how to achieve desired strain levels and patterns. The program is collaborative involving Lucent Technologies(GeSi), Cornell University(Si3N4 membranes), and Duke University (YBCO films), along with the University of Virginia. %%% The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new aspects of electronic/photonic materials. Experimental tools are now available to allow optical observation of elementary surface processes and related phenomena which when better understood allow advances in fundamental science and technology. The basic knowledge and understanding gained from the research is expected to contribute to improving the performance and stability of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***