Acquisition of a Cryogenic Near-Field Scanning Microwave Microscope

该奖项为低温扫描近场微波显微镜的获取和开发提供了部分支持，该显微镜将在空间分辨率为10纳米的微波频率下测量重要的材料特性（如表面薄片电阻、复介电常数、复磁导率等）。低温操作将使我们研制出灵敏度大大提高的超导近场微波显微镜。该显微镜还将被配置用于以100纳米分辨率测量超导微波器件中的微波电流分布，以了解这些器件中非线性的微观起源。在一种操作模式下，我们将获得高空间分辨率的微波图像，该图像将不受样品地形的影响。在其他配置中，显微镜还将使用扫描测热计来测量超导微波器件的空间分辨温度变化。一个工作在4.2 K的扫描单电子晶体管，将被用来灵敏地成像非常小的电场和电荷。最后，该显微镜将与现有的微波网络分析仪结合使用，通过校准宽带电磁场和电导率测量进行成像。% % % * * *

9802756 Anlage This award provides partial support for the acquisition and development of a cryogenic scanned near-field microwave microscope which will measure important materials properties (such as surface sheet resistance, complex dielectric permittivity, complex magnetic permeability, etc.) at microwave frequencies with a spatial resolution on the order of 10 nm. The cryogenic operation will allow us to develop a superconducting near-field microwave microscope with greatly enhanced sensitivity. The microscope will also be configured to measure microwave current distributions in superconducting microwave devices at 100 nm resolution, for the purpose of understanding the microscopic origins of nonlinearity in these devices. In one mode of operation, we will obtain high spatial resolution microwave images which will be free of the effects of sample topography. In other configurations, the microscope will also use a scanning bolometer to measure spatially resolved temperature variations in superconducting microwave devices. A scanning single-electron transistor, operating at 4.2 K, will be used to sensitively image very small electric fields and charges. Finally, the microscope will be used in conjunction with an existing microwave network analyzer for imaging with calibrated broadband electromagnetic field and conductivity measurements. %%% ***