Fluorine-Silicon Interactions and Competitive Etching Pathways

氟硅相互作用和竞争蚀刻途径

• 批准号: 9803177
• 负责人: John Weaver
• 金额: $ 34万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-09-01 至 2000-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9803177&HistoricalAwards=false
• 关键词: Fluorine; Silicon; Interactions; Competitive; Etching

9803177 Weaver The proposed program aims to investigate the interactions of fluorine with silicon surfaces, the modifications that are brought about by etching, and the atomic-scale interactions that underlie material removal. The fluorine-silicon (100) system is an ideal model system because problems can be addressed that are of broad importance, namely how ideal surfaces develop "corrosive layers" when exposed to reactants and how multilayer etching competes with layer-by- layer etching. Atomic-resolution scanning tunneling microscopy would be used to investigate fluorine chemisorption and fluorine-fluorine repulsive interactions in the adlayer. Studies have been designed that would determine the atomic sequency of events leading to silicon difloride desorption and the implications vis-a-vis layer-by- layer etching with silicon defluoride. Others would focus on corrosive-layer silicon tetrafluoride eteching, the nucleation of fluorosilyl structures on the surface, and the strucural consequences of material removal from these disordered layers. %%% These studies of fluorine etching of silicon are pertinent to modern technologies based on silicon and other semiconductors. In the $700b microelectronics industry, for example, the majority of the 1018 transistors produced in 1997 were carved into monolithic pieces of silicon using themethods of chemical etching. The shapes, positions, and registry of these structures are controlled with sub-micron accuracy. This project focuses on the underlying chemical and physical processes responsible for this etching. Deeper insights are needed to achieve dfurther miniaturization for tomorrow's circuitry. ***

小行星9803177 该计划旨在研究氟与硅表面的相互作用，蚀刻带来的修改，以及材料去除的原子级相互作用。 氟-硅（100）系统是理想的模型系统，因为可以解决具有广泛重要性的问题，即当暴露于反应物时理想表面如何形成“腐蚀层”以及多层蚀刻如何与逐层蚀刻竞争。 原子分辨率扫描隧道显微镜将被用来研究氟的化学吸附和氟-氟排斥的相互作用在吸附层。 已经设计了研究，以确定导致二氟化硅脱附的事件的原子顺序和与脱氟硅逐层蚀刻的关系。 其他人则专注于腐蚀层四氟化硅蚀刻，表面上氟甲硅烷基结构的成核，以及从这些无序层中去除材料的结构后果。 这些氟蚀刻硅的研究与基于硅和其他半导体的现代技术有关。 例如，在价值7000亿美元的微电子工业中，1997年生产的1018个晶体管中的大多数都是用化学蚀刻的方法雕刻成单片硅片的。 这些结构的形状、位置和配准以亚微米精度进行控制。 该项目的重点是负责这种蚀刻的基本化学和物理过程。 为了实现未来电路的进一步小型化，需要更深入的了解。 ***