Roughening, Etching, and Nanoscale Patterning of Si and Ge

Si 和 Ge 的粗糙化、蚀刻和纳米级图案化

基本信息

  • 批准号:
    0301821
  • 负责人:
  • 金额:
    $ 37.5万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2003
  • 资助国家:
    美国
  • 起止时间:
    2003-07-01 至 2007-06-30
  • 项目状态:
    已结题

项目摘要

This project focuses on atomic-scale interactions associated with thermally-activated dry etching, and with surface roughening without etching (desorption). Silicon (100) surfaces with adsorbed halogens serve as model systems to address problems of broad interest including how and why surface modifications occur when there are competitive reaction pathways and how adsorbates and strain alter the energetics of reaction. Comparison to results for germanium (100) will test the generality of conclusions drawn for silicon (100). The emphasis is on structural changes at surfaces. Variable temperature scanning tunneling microscopy is used to advance the understanding of roughening, etching, and nanoscale patterning to a new level by following modifications as they occur, event-by-event, at high temperature.%%%A key component of the proposed program involves the education and training of graduate and undergraduate students. Students supported by the NSF would join a group made up of people from around the world. They would work with senior group members while they become familiar with the laboratory. In general, students are coauthors of publications by the end of the second year. They participate fully in the preparation of manuscripts, both their own and those of other group members, and of proposals such as this one. They are expected to compete for student prizes, to present papers at conferences. They are also expected to contribute to the education of younger students. Undergraduate students are fully integrated into the group, and their contributions are reflected by coauthorship of publications. Our laboratories are open for visits by prospective undergraduate and graduate students, freshmen involved in Engineering Open House and upperclassmen involved in senior design projects benefit from access to them. Twenty-six percent of the graduate students in Materials Science at UIUC are women; a goal is to increase the overall number and to recruit into the Weaver group. Instrumentation will be developed for variable temperature scanning tunneling microscopy, a state of the art technique. Collaborative projects are encouraged. The results will be disseminated through publications, contributed conference papers, and invited talks and seminars, as in the past with results obtained under NSF support. While there is a rich literature that describes atomic-scale growth of films and nanostructures, frequently with key insights provided by scanning tunneling microscopy, far much less attention paid to material removal and the prospects of nanoscale patterning. Our focus on material removal provides important insights that will broaden the knowledge base significantly and will contribute to advanced technologies.
该项目的重点是原子尺度的相互作用与热激活干法蚀刻,并与表面粗糙化没有蚀刻(解吸)。具有吸附卤素的硅(100)表面作为模型系统来解决广泛感兴趣的问题,包括当存在竞争性反应途径时如何以及为什么发生表面改性,以及吸附物和应变如何改变反应的能量学。与锗(100)的结果的比较将检验对硅(100)得出的结论的一般性。重点是表面的结构变化。变温扫描隧道显微镜用于推进粗糙化,蚀刻和纳米级图案化的理解到一个新的水平,通过以下修改,因为他们发生,事件,在高温下。%拟议方案的一个关键组成部分涉及研究生和本科生的教育和培训。由国家科学基金会支持的学生将加入一个由来自世界各地的人组成的团体。他们将与资深小组成员一起工作,同时熟悉实验室。一般来说,学生在第二年年底前是出版物的共同作者。他们充分参与起草自己的和其他小组成员的文稿,以及诸如本报告这样的提案。他们被期望去竞争学生奖,在会议上发表论文。他们还被期望为年轻学生的教育做出贡献。本科生完全融入小组,他们的贡献反映在合著的出版物。我们的实验室开放给未来的本科生和研究生参观,参与工程开放日的新生和参与高级设计项目的高年级学生从中受益。UIUC材料科学研究生中有26%是女性;目标是增加总体人数并招募到韦弗集团。 将开发用于变温扫描隧道显微镜的仪器,这是一种最先进的技术。鼓励合作项目。与以往在国家科学基金支持下取得的成果一样,将通过出版物、提供会议文件以及应邀举行的会谈和研讨会来传播成果。虽然有丰富的文献描述了薄膜和纳米结构的原子级生长,经常通过扫描隧道显微镜提供关键的见解,但对材料去除和纳米级图案化的前景关注得少得多。我们对材料去除的关注提供了重要的见解,这将大大拓宽知识基础,并将有助于先进技术的发展。

项目成果

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John Weaver其他文献

Auburn University Robo Camp K12 Inclusive Outreach Program: A three-step model of Effective Introducing Middle School Students to Computer Programming and Robotics
奥本大学机器人营 K12 包容性推广计划:有效向中学生介绍计算机编程和机器人技术的三步模型
  • DOI:
  • 发表时间:
    2013
  • 期刊:
  • 影响因子:
    0
  • 作者:
    D. Marghitu;Taha Ben Brahim;John Weaver;Yasmeen Rawajfih
  • 通讯作者:
    Yasmeen Rawajfih
The Hydronephrosis Severity Index guides paediatric antenatal hydronephrosis management based on artificial intelligence applied to ultrasound images alone
肾积水严重程度指数仅基于应用于超声图像的人工智能来指导儿科产前肾积水管理。
  • DOI:
    10.1038/s41598-024-72271-9
  • 发表时间:
    2024-10-01
  • 期刊:
  • 影响因子:
    3.900
  • 作者:
    Lauren Erdman;Mandy Rickard;Erik Drysdale;Marta Skreta;Stanley Bryan Hua;Kunj Sheth;Daniel Alvarez;Kyla N. Velaer;Michael E. Chua;Joana Dos Santos;Daniel Keefe;Norman D. Rosenblum;Megan A. Bonnett;John Weaver;Alice Xiang;Yong Fan;Bernarda Viteri;Christopher S. Cooper;Gregory E. Tasian;Armando J. Lorenzo;Anna Goldenberg
  • 通讯作者:
    Anna Goldenberg
Incidence and resolution of de novo hydronephrosis after pediatric robot-assisted laparoscopic extravesical ureteral reimplantation for primary vesicoureteral reflux
  • DOI:
    10.1016/j.jpurol.2022.04.005
  • 发表时间:
    2022-08-01
  • 期刊:
  • 影响因子:
  • 作者:
    Sameer Mittal;Sahar Eftekharzadeh;Aznive Aghababian;John Weaver;Katherine Fischer;Christopher J. Long;Dana A. Weiss;Jason Van Batavia;Arun K. Srinivasan;Aseem R. Shukla
  • 通讯作者:
    Aseem R. Shukla
Deferring gonadectomy in patients with turner syndrome with a genetic Y component is not a safe practice
  • DOI:
    10.1016/j.jpurol.2022.12.012
  • 发表时间:
    2023-06-01
  • 期刊:
  • 影响因子:
  • 作者:
    Sameer Mittal;John Weaver;Aznive Aghababian;Rebecca Edwins;Karl Godlewski;Katherine Fischer;Sharmayne Siu;Denise Gruccio;Jason Van Batavia;Arun Srinivasan;Christopher Long;Vaneeta Bamba;Vandana Batra;Tricia Bhatti;Thomas Kolon
  • 通讯作者:
    Thomas Kolon
MP27-16 SURGEON-SPECIFIC VARIATION FOR OUTCOMES AFTER BENIGN PROSTATIC HYPERPLASIA SURGERY
  • DOI:
    10.1016/j.juro.2017.02.808
  • 发表时间:
    2017-04-01
  • 期刊:
  • 影响因子:
  • 作者:
    John Weaver;Eric Kim;Joel Vetter;Niraj Badhiwala;Seth Strope
  • 通讯作者:
    Seth Strope

John Weaver的其他文献

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{{ truncateString('John Weaver', 18)}}的其他基金

Heteroepitaxial Metal Nanostructure Diffusion Through Collective Slip
通过集体滑移的异质外延金属纳米结构扩散
  • 批准号:
    0703995
  • 财政年份:
    2007
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Continuing Grant
U.S.-Pakistan Cooperative Research: Growth and Characterization of Semiconductor and Magnetic Nanocrystals Using Buffer-Layer-Assisted Growth
美国-巴基斯坦合作研究:使用缓冲层辅助生长的半导体和磁性纳米晶体的生长和表征
  • 批准号:
    0353419
  • 财政年份:
    2004
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Standard Grant
Fluorine-Silicon Interactions and Competitive Etching Pathways
氟硅相互作用和竞争蚀刻途径
  • 批准号:
    0096306
  • 财政年份:
    2000
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Standard Grant
Fluorine-Silicon Interactions and Competitive Etching Pathways
氟硅相互作用和竞争蚀刻途径
  • 批准号:
    9803177
  • 财政年份:
    1998
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Standard Grant
Electronic and Chemical Interactions of Buckminster Fullerene
巴克明斯特富勒烯的电子和化学相互作用
  • 批准号:
    9108419
  • 财政年份:
    1991
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Continuing Grant
World Revision of the Caddisfly Family Lepidostomatidae (Insecta: Trichoptera)
石蛾科鳞口虫科(昆虫纲:毛翅目)世界修订版
  • 批准号:
    8907401
  • 财政年份:
    1990
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Standard Grant
Structural and Electronic Properties of Epitaxial Overlayers: Interfacial Phenomena
外延层的结构和电子特性:界面现象
  • 批准号:
    8610837
  • 财政年份:
    1987
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Continuing Grant
Electronic Interactions in Metal-Hydrogen Systems (MaterialsResearch)
金属-氢系统中的电子相互作用(材料研究)
  • 批准号:
    8216489
  • 财政年份:
    1983
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Continuing Grant
Electronic Structure Studies of Titanium and Zirconium Hydrides
氢化钛和氢化锆的电子结构研究
  • 批准号:
    8001673
  • 财政年份:
    1980
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Standard Grant
Photoelectron Spectroscopy Studies of Transition Metal Carbides Using Synchrotron Radiation
使用同步辐射的过渡金属碳化物的光电子能谱研究
  • 批准号:
    7821080
  • 财政年份:
    1979
  • 资助金额:
    $ 37.5万
  • 项目类别:
    Continuing Grant

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Precision Dry Etching of 2D Materials: 2DETCH
2D 材料的精密干法蚀刻:2DETCH
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    EP/Z531121/1
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Theoretical Investigation and Design of Thermochemical and Plasma-Assisted Etching of Diamond Surfaces
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Collaborative Research: DMREF: Computationally Driven Discovery and Synthesis of 2D Materials through Selective Etching
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