U.S.-Germany Cooperative Research: Device Simulator for Heterojunction Bipolar Transistors

美德合作研究：异质结双极晶体管器件模拟器

• 批准号: 9809935
• 负责人: Juin Liou
• 金额: $ 1.93万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-03-01 至 2001-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9809935&HistoricalAwards=false
• 关键词: U.S.; Germany; Cooperative; Research; Device

9809935LiouThis award supports the PI, Juin Liou, and two graduate students from the University of Central Florida in a collaboration with Frank Schwierz of the Department of Electrical and Information Engineering at the Technical University of Ilmenau, Germany. The research focus is on the modeling, simulation, fabrication, and reliability of a new and promising semiconductor device called the heterojunction bipolar transistor (HBT). The new transistor has a very high switching speed and superior current-handling abilities, and is ideal for use in high-frequency, high-speed, high-current applications such as frequency mixers and power amplifiers operating in the microwave range. The U.S. group has extensive experience in the analytical modeling of HBTs under steady and transient operations, and the German group specializes in the development of simulators for predicting HBT behavior under varying circumstances. The combined expertise will result in a significant advancement in knowledge of HBT behavior and improved HBT devices.

9809935 Liou该奖项支持PI Juin Liou和两名来自中央佛罗里达大学的研究生与德国伊尔梅瑙工业大学电气和信息工程系的Frank Schwierz合作。 研究的重点是一个新的和有前途的半导体器件称为异质结双极晶体管（HBT）的建模，仿真，制造和可靠性。 这种新型晶体管具有极高的开关速度和上级电流处理能力，非常适合用于高频、高速、大电流应用，如微波范围内的混频器和功率放大器。 该美国小组在稳态和瞬态操作下的HBT分析建模方面拥有丰富的经验，而德国小组专门从事模拟器的开发，用于预测HBT在不同情况下的行为。 结合的专业知识将导致显着进步的知识HBT的行为和改进的HBT设备。