U.S.-Germany Cooperative Research: Device Simulator for Heterojunction Bipolar Transistors

9809935刘该奖项支持PiJin Liou和两名来自中佛罗里达大学的研究生，他们与德国伊尔梅瑙技术大学电气和信息工程系的Frank Schwierz合作。研究重点是一种新的、有前途的半导体器件--异质结双极晶体管(HBT)的建模、模拟、制造和可靠性。这种新型晶体管具有非常高的开关速度和卓越的电流处理能力，是高频、高速、大电流应用的理想选择，例如在微波范围内工作的混频器和功率放大器。这家美国集团在稳态和暂态操作下的HBT分析建模方面拥有丰富的经验，而这家德国集团专门开发用于预测不同情况下HBT行为的模拟器。这些专业知识的结合将大大提高人们对HBT行为和改进HBT器件的认识。

9809935LiouThis award supports the PI, Juin Liou, and two graduate students from the University of Central Florida in a collaboration with Frank Schwierz of the Department of Electrical and Information Engineering at the Technical University of Ilmenau, Germany. The research focus is on the modeling, simulation, fabrication, and reliability of a new and promising semiconductor device called the heterojunction bipolar transistor (HBT). The new transistor has a very high switching speed and superior current-handling abilities, and is ideal for use in high-frequency, high-speed, high-current applications such as frequency mixers and power amplifiers operating in the microwave range. The U.S. group has extensive experience in the analytical modeling of HBTs under steady and transient operations, and the German group specializes in the development of simulators for predicting HBT behavior under varying circumstances. The combined expertise will result in a significant advancement in knowledge of HBT behavior and improved HBT devices.