Spin transfer torque dynamics in diluted ferromagnetic semiconductor nanostructures

稀释铁磁半导体纳米结构中的自旋转移矩动力学

• 批准号: 127855618
• 负责人: Privatdozent Dr. Hans-Werner Schumacher
• 金额: --
• 依托单位: Fachbereich 2.5 - Halbleiterphysik und Magnetismus
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2009
• 资助国家: 德国
• 起止时间: 2008-12-31 至 2013-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/127855618?language=en
• 关键词: Spin; transfer; torque; dynamics; diluted

In this project the ultra fast spin transfer torque (STT) magnetization dynamics in GaMnAs diluted ferromagnetic semiconductor nanostructures are investigated. High density currents in GaMnAs based magnetic tunnel barrier (MTJ) nanopillars are used to induce STT magnetization precession. The precessional dynamics are detected by wide bandwidth time and frequency resolved measurements of the tunneling magneto resistance (TMR) of the nanopillars at cryogenic temperatures. The parameter dependence of the STT precession frequency and linewidth as function of external parameters (STT current density, static field angle and amplitude,…) will yield a detailed insight into the nature of STT in GaMnAs tunnel systems and will allow to distinguish possible vector components of STT. STT induced large angle precession will be studied by time resolved magneto transport. Based on this, optimized ultra fast STT magnetization reversal schemes will be devised and tested. This project will allow a deep insight into ultra fast STT magnetization dynamics and magnetization reversal of GaMnAs nanodevices. It thus provides the basis for the development of future ultra fast DMS based spintronic devices and applications.

本计画主要研究GaMnAs稀磁半导体奈米结构中的超快自旋转移矩（STT）磁化动力学。GaMnAs基磁性隧道势垒（MTJ）纳米柱中的高密度电流用于诱导STT磁化旋进。岁差动力学检测的宽带宽的时间和频率分辨测量的隧道磁阻（TMR）的纳米柱在低温下。STT进动频率和线宽作为外部参数（STT电流密度，静态场角和振幅，.）的函数的参数依赖性将产生详细的洞察STT在GaMnAs隧道系统的性质，并将允许区分可能的矢量分量的STT。STT引起的大角度进动将通过时间分辨的磁输运来研究。在此基础上，将设计和测试优化的超快速STT磁化反转方案。该项目将允许深入了解GaMnAs纳米器件的超快STT磁化动力学和磁化反转。这为未来基于超快DMS的自旋电子器件及其应用的发展奠定了基础。