Novel designs of Spin Torque Transfer Magnetic Random Access Memory (STT-MRAM) devices

自旋转矩传递磁性随机存取存储器（STT-MRAM）器件的新颖设计

• 批准号: 561528-2021
• 负责人: Girt, Erol
• 金额: $ 8.65万
• 依托单位: Simon Fraser University
• 依托单位国家: 加拿大
• 项目类别: Idea to Innovation
• 财政年份: 2021
• 资助国家: 加拿大
• 起止时间: 2021-01-01 至 2022-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=724228
• 关键词: Novel; designs; Spin; Torque; Transfer

The rapid increase in magnetic memory storage density over the last three decades has been made possible by the discovery of interface-induced phenomena in ferromagnetic /non-magnetic multilayers. The discovery of giant magnetoresistance and tunnel magnetoresistance phenomena enabled the detection of magnetic moment direction and are key for the design of magnetic sensors that are responsible for >100 times increase in the recording density of hard drives. Spin torque transfer is utilized to electrically manipulate the magnetic moment direction, allowing for a high speed/high density solid state non-volatile magnetic memories, which are identified as the next generation in magnetic memory devices.Another interface effect that has been intensively studied is the interlayer exchange coupling. This phenomenon has not been used to its full potential until now, since traditional coupling layers only allow for collinear orientation of magnetic moments of FM layers. Recently, we discovered and patented new coupling layer materials, which can be inserted instead between two magnetic layers to precisely control the coupling angle. Our invention creates an opportunity for designing novel solid state magnetic memory structures with high energy efficiency and writing speed, which is the main bottleneck in current efforts to develop these memory structures.The objective of the proposed project is to integrate our patented technology into a functioning spin transfer torque magnetic random access memory (STT-MRAM) device which would be faster and more energy efficient than existing non-volatile RAM devices. Our goal is to attract early stage investors for a start-up company, or to transfer the technology to existing companies.

在过去的三十年中，磁性存储器存储密度的快速增加已经通过铁磁/非磁性多层膜中的界面诱导现象的发现而成为可能。巨磁阻和隧道磁阻现象的发现使得能够检测磁矩方向，并且是磁传感器设计的关键，这些传感器负责将硬盘驱动器的记录密度增加>100倍。利用自旋矩转移来控制磁矩的方向，可以实现高速/高密度的固态非易失性磁存储器，被认为是下一代磁存储器件。另一个被广泛研究的界面效应是层间交换耦合。直到现在，这种现象还没有被充分利用，因为传统的耦合层只允许FM层的磁矩的共线取向。最近，我们发现并申请了新的耦合层材料专利，这些材料可以插入两个磁性层之间，以精确控制耦合角度。我们的发明创造了设计具有高能量效率和写入速度的新型固态磁存储器结构的机会，该项目的目标是将我们的专利技术集成到一个功能性的自旋转移矩磁性随机存取存储器中STT-MRAM（STT-MRAM）器件，其将比现有的非易失性RAM器件更快且更节能。我们的目标是为初创公司吸引早期投资者，或将技术转让给现有公司。