Novel designs of Spin Torque Transfer Magnetic Random Access Memory (STT-MRAM) devices

由于在铁磁/非磁性多层膜中发现了界面感应现象，使得磁记忆存储密度在过去三十年中的快速增长成为可能。巨磁电阻和隧道磁阻现象的发现使磁矩方向的检测成为可能，是设计磁性传感器的关键，这种传感器可以将硬盘驱动器的记录密度提高100倍。利用自旋扭矩传递来电控磁矩方向，实现高速/高密度固态非易失性磁存储器，被认为是下一代磁存储器件。另一个被广泛研究的界面效应是层间交换耦合。由于传统的耦合层只允许FM层的磁矩共线取向，这种现象到目前为止还没有被充分利用。最近，我们发现并申请了新的耦合层材料专利，可以将其插入两个磁性层之间，以精确控制耦合角度。我们的发明为设计具有高能效和写入速度的新型固态磁存储结构创造了机会，这是当前开发这些存储结构的主要瓶颈。拟议项目的目标是将我们的专利技术集成到功能正常的自旋转移扭矩磁随机存取存储器(STT-MRAM)器件中，该器件将比现有的非易失性RAM器件更快、更节能。我们的目标是为一家初创公司吸引早期投资者，或将技术转让给现有公司。

The rapid increase in magnetic memory storage density over the last three decades has been made possible by the discovery of interface-induced phenomena in ferromagnetic /non-magnetic multilayers. The discovery of giant magnetoresistance and tunnel magnetoresistance phenomena enabled the detection of magnetic moment direction and are key for the design of magnetic sensors that are responsible for >100 times increase in the recording density of hard drives. Spin torque transfer is utilized to electrically manipulate the magnetic moment direction, allowing for a high speed/high density solid state non-volatile magnetic memories, which are identified as the next generation in magnetic memory devices.Another interface effect that has been intensively studied is the interlayer exchange coupling. This phenomenon has not been used to its full potential until now, since traditional coupling layers only allow for collinear orientation of magnetic moments of FM layers. Recently, we discovered and patented new coupling layer materials, which can be inserted instead between two magnetic layers to precisely control the coupling angle. Our invention creates an opportunity for designing novel solid state magnetic memory structures with high energy efficiency and writing speed, which is the main bottleneck in current efforts to develop these memory structures.The objective of the proposed project is to integrate our patented technology into a functioning spin transfer torque magnetic random access memory (STT-MRAM) device which would be faster and more energy efficient than existing non-volatile RAM devices. Our goal is to attract early stage investors for a start-up company, or to transfer the technology to existing companies.