Step Edge Decoration and the Characterization of Substrate Misorientation Effects on Thin Film Nucleation

阶梯边缘装饰和基板取向差对薄膜成核影响的表征

• 批准号: 9820061
• 负责人: Barbara Hinch
• 金额: $ 38万
• 依托单位: Rutgers University New Brunswick
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-07-15 至 2003-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9820061&HistoricalAwards=false
• 关键词: Step; Edge; Decoration; Characterization; Substrate

This research project is concerned with the role of step and edge defects on the chemistry and growth of metal thin films. Using elastic and inelastic helium atom scattering methods, combined with spot profile anaylsis low energy electron diffraction studies, Professor Barbara J. Hinch and her coworkers at Rutgers University examine the motion of steps during thin film growth, and the adsorption and reaction of molecules at these step defects. With the support of the Analytical and Surface Chemistry Program in the Division of Chemistry and the Solid State Chemistry Program in the Division of Materials Research, these diffraction probes combined with the real space structural probe of scanning tunneling microscopy to provide models for the reaction and diffusion of step edges, primarily on aluminum thin film surfaces. Growth of these films from atomic sources as well as the chemical vapor deposition of aluminum from organometallic precursors such as trimethylamine alane is explored, with a view to developing technologically important information about the growth process.The fabrication of electronic devices involves the growth of thin films of metals on various substrates. This growth process is often controlled by the presence of step edge defects on the surface. This research project obtains fundamental information about the nature and dynamics of these step edge defects, and assesses their role in the growth of thin film materials. This fundamental work has a clear connection to technologically important areas of microelectronic device fabrication.

本研究计画主要探讨阶梯缺陷与边缘缺陷对金属薄膜化学性质与成长之影响。 使用弹性和非弹性氦原子散射方法，结合点轮廓分析低能电子衍射研究，罗格斯大学的Barbara J. Hinch教授和她的同事研究了薄膜生长过程中台阶的运动，以及分子在这些台阶缺陷处的吸附和反应。在化学系的分析和表面化学项目和材料研究系的固态化学项目的支持下，这些衍射探针与扫描隧道显微镜的真实的空间结构探针相结合，为台阶边缘的反应和扩散提供模型，主要是在铝薄膜表面上。 这些薄膜的生长从原子源，以及铝的有机金属前体，如三甲基胺铝烷的化学气相沉积进行了探讨，以期开发技术上的重要信息的增长过程。电子器件的制造涉及到各种基板上的金属薄膜的生长。 这种生长过程通常由表面上台阶边缘缺陷的存在来控制。 该研究项目获得了有关这些台阶边缘缺陷的性质和动力学的基本信息，并评估了它们在薄膜材料生长中的作用。 这项基础性工作与微电子器件制造的重要技术领域有着明确的联系。