Artificial Dielectrics: Hybrid Structures for MID-IR Applications
人造电介质:用于中红外应用的混合结构
基本信息
- 批准号:9820200
- 负责人:
- 金额:$ 24万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1999
- 资助国家:美国
- 起止时间:1999-06-01 至 2003-05-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
9820200GrebelThe dielectric properties of passive thin films can be tailored by incorporating small scattering features within them. Artificial Dielectrics (ADs) are achieved upon the embedment of conductors as fine structures within dielectric materials. The same concept works in the complementary mode where an array of very small holes are placed within a thin metal film. This concept is of particular interest in the mid-IR wavelength region where the variety of transparent dielectric materials is quite limited. Moreover, tailoring the dispersion properties for systems such as band-pass filters or resonators is extremely important for chemical and biological characterizations. Only a very few structures have been realized in that spectral region and we intend to explore it in a systematic manner. Although much theoretical effort has been invested in understanding the wave propagation in the microwave and far infrared region, only recently an adequate model was constructed in the 2-5 microns region by P. Lalanne. Recent developments in high aspect ratio photoresists make it very appealing to fabricate complex structures using photo lithography. Moreover, since the thickness of the film may be made larger than the propagating wavelength, near-field and far-field elements may be realized. We, therefore, propose to analyze and fabricate dispersion elements made of stacks of small scattering features within dielectric or metal films (Artificial Dielectrics) for mid-IR wavelength region. These features will be constructed as periodic arrays of hybrid structures (metal/dielectric combination) with scattering elements much smaller than the propagating wavelength. In particular we propose to study analytically and experimentally the properties of hybrid structures, such as wavefront dividing beamsplitters. The resonance's of band pass filters, the resonance structure of two of these hybrid structures in a Fabry-Perot configuration, and the dispersion properties of stacks of hybrid structures as 3-D artificial dielectrics. The samples will be produced in the class 10 clean room at NJIT using special facilities for Si bonding and deep reactive ion etching. Near and far-field measurements will be performed at the Electronic Imaging Center at NJIT, making use of an IR-CCD camera (Samoff, 3-5 microns) interfaced with a SUN workstation to acquire and process images with various integration times.***
9820200 Grebel通过在其中加入小的散射特征,可以调整无源薄膜的介电性质。 人工电介质(AD)是在电介质材料内嵌入导体作为精细结构时实现的。 相同的概念在互补模式中起作用,其中非常小的孔的阵列被放置在薄金属膜内。 这一概念在中红外波长区域特别令人感兴趣,其中透明介电材料的种类非常有限。 此外,定制系统的色散特性,如带通滤波器或谐振器是非常重要的化学和生物表征。 在该光谱区域中,只有很少的结构被实现,我们打算以系统的方式对其进行探索。 尽管在理解微波和远红外区域中的波传播方面已经投入了大量的理论努力,但是直到最近,P. Lalanne才在2-5微米区域中构建了适当的模型。 高纵横比光致抗蚀剂的最新发展使得使用光刻法制造复杂结构变得非常有吸引力。 此外,由于可以使膜的厚度大于传播波长,所以可以实现近场和远场元件。 因此,我们建议分析和制造分散元件的电介质或金属膜(人工电介质)内的小散射功能的堆栈中红外波长区域。 这些特征将被构造为具有比传播波长小得多的散射元件的混合结构(金属/电介质组合)的周期性阵列。 特别是,我们建议研究分析和实验的混合结构,如波前分割分束器的属性。 研究了带通滤波器的谐振特性,其中两种混合结构在Fabry-Perot结构中的谐振结构,以及混合结构叠层作为三维人工晶体时的色散特性。 样品将在NJIT的10级洁净室中使用特殊的Si键合和深反应离子蚀刻设施生产。 近场和远场测量将在NJIT的电子成像中心进行,利用与SUN工作站连接的IR-CCD照相机(Samoff,3-5微米)获取和处理具有不同积分时间的图像。
项目成果
期刊论文数量(0)
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Haim Grebel其他文献
Electrochemical cells with intermediate capacitor elements
- DOI:
10.1016/j.cplett.2015.10.009 - 发表时间:
2015-11-01 - 期刊:
- 影响因子:
- 作者:
Haim Grebel;Akshat Patel - 通讯作者:
Akshat Patel
Haim Grebel的其他文献
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{{ truncateString('Haim Grebel', 18)}}的其他基金
Sensors: Narrow Band, Broad Band and Low Pass Metal Mesh Filters for sensors in the IR to THz region and instant multiple wavelength detection of chemical agents [NJIT_FY05_015]
传感器:用于 IR 至 THz 区域传感器的窄带、宽带和低通金属网滤光片以及化学试剂的即时多波长检测 [NJIT_FY05_015]
- 批准号:
0514361 - 财政年份:2005
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
Microparticle Photonics: Frequency Control and Linewidth Quenching of Semiconductor Lasers Using Optical Feedback from Spherical Micro-Cavities
微粒光子学:利用球形微腔的光学反馈对半导体激光器进行频率控制和线宽淬火
- 批准号:
9818596 - 财政年份:1998
- 资助金额:
$ 24万 - 项目类别:
Continuing grant
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