SBIR Phase I: Highly Plasma Etch-Resistant Electron Beam Resists for Sub-150nm Applications

SBIR 第一阶段：适用于 150nm 以下应用的高抗等离子蚀刻电子束光刻胶

• 批准号: 9860346
• 负责人: Tony Flaim
• 金额: $ 9.99万
• 依托单位: Brewer Science, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-01-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9860346&HistoricalAwards=false
• 关键词: SBIR; Phase; Highly; Plasma; Etch

9860346 This Small Business Innovation Research Phase I project from Brewer Science Inc. will demonstrate a new negative-working electron beam resist for sub-150 nm lithography. The current portfolio of electron beam resist products is based primarily on organic polymers with poor plasma etching resistance. Yet these resists are of critical importance in the microelectronics industry, for future mask production and eventually for IC production by projection and direct write electron beam lithography. The resist concept which Brewer Sciences Inc. will pursue in this work will overcome the limitations of current resist products by utilizing a radiation-crosslinkable organotitanium polymer as the primary resist component, in order to achieve high sensitivity and resolution at 50kV exposure energies along with exceptional plasma etching resistance.

9860346 Brewer Science Inc. 的这一小型企业创新研究第一阶段项目将展示一种用于 150 nm 以下光刻的新型负性工作电子束抗蚀剂。 目前的电子束抗蚀剂产品组合主要基于耐等离子蚀刻性较差的有机聚合物。 然而，这些抗蚀剂对于微电子行业、未来的掩模生产以及最终通过投影和直写电子束光刻的 IC 生产至关重要。 Brewer Sciences Inc. 在这项工作中追求的光刻胶概念将通过利用可辐射交联的有机钛聚合物作为主要光刻胶成分来克服当前光刻胶产品的局限性，以便在 50kV 曝光能量下实现高灵敏度和分辨率以及出色的耐等离子蚀刻性。