SBIR Phase I: Growth of CdGeAs2 Single Crystals by the Czochralski Technique

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9860740 This Small Business Innovation Research (SBIR)Phase I project aims to develop a new approach for the growth of CdGeAs2 single crystals. CdGeAs2 has outstanding optical nonlinear properties. Its nonlinear optical coefficient is the highest among all known crystals, it is transmissive from 2-3 to 18 um and it has a relatively high thermal conductivity. It is therefore, a material of choice for the generation of tunable laser radiation in the infrared. Although the optical transmission of CdGeAs2 can be improved by after-growth treatments, we propose to grow CdGeAs2 single crystals by the Czochralski technique to achieve high uniformity and optical transmission in the as-grown state. High quality and lower cost CdGeAs2 single crystals will make possible powerful infrared laser sources tunable from 4 to 11 um. Such sources will have numerous commercial applications including defense countermeasure systems, communication systems, remote sensing of contaminants in the atmosphere and infrared spectroscopy.