SBIR Phase I: Growth of CdGeAs2 Single Crystals by the Czochralski Technique

SBIR 第一阶段：采用直拉技术生长 CdGeAs2 单晶

• 批准号: 9860740
• 负责人: Dan Perlov
• 金额: $ 9.98万
• 依托单位: INRAD, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-01-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9860740&HistoricalAwards=false
• 关键词: SBIR; Phase; Growth; CdGeAs2; Single

9860740 This Small Business Innovation Research (SBIR)Phase I project aims to develop a new approach for the growth of CdGeAs2 single crystals. CdGeAs2 has outstanding optical nonlinear properties. Its nonlinear optical coefficient is the highest among all known crystals, it is transmissive from 2-3 to 18 um and it has a relatively high thermal conductivity. It is therefore, a material of choice for the generation of tunable laser radiation in the infrared. Although the optical transmission of CdGeAs2 can be improved by after-growth treatments, we propose to grow CdGeAs2 single crystals by the Czochralski technique to achieve high uniformity and optical transmission in the as-grown state. High quality and lower cost CdGeAs2 single crystals will make possible powerful infrared laser sources tunable from 4 to 11 um. Such sources will have numerous commercial applications including defense countermeasure systems, communication systems, remote sensing of contaminants in the atmosphere and infrared spectroscopy.

9860740 这个小企业创新研究（SBIR）第一阶段项目旨在开发一种新的方法来生长CdGeAs 2单晶。CdGeAs 2具有优异的光学非线性特性。它的非线性光学系数是所有已知晶体中最高的，它是从2-3到18 μ m的透射，并且它具有相对高的热导率。因此，它是在红外线中产生可调谐激光辐射的首选材料。虽然CdGeAs 2的光传输可以通过生长后的处理得到改善，我们建议通过直拉技术生长CdGeAs 2单晶，以实现高的均匀性和在生长状态下的光传输。 高质量和低成本的CdGeAs 2单晶将使4 ~ 11 μ m可调谐的强红外激光源成为可能。这些辐射源将具有许多商业应用，包括防御对抗系统、通信系统、大气污染物遥感和红外光谱学。