Symposium B: Growth Instablities and Decomposition During Heteroepitaxy, Boston, Massachusetts, November 30 - December 4, 1998

9900708 PachavisA专题讨论会将在1998年秋季MRS会议上举行，主题是“异质外延期间的生长不稳定性和分解”。会议的目标是汇集来自物理，化学，材料科学和电气工程等学科的理论家和实验家，以解决各种薄膜生长过程中发生的生长不稳定性的基本原理和应用。另一个目标是促进研究人员之间的合作和讨论，特别是青年专业人员与知名专家之间的合作和讨论，并确定未来研究的关键问题。会议汇集了工业和学术科学家，努力鼓励这些团体之间的合作。NSF的支持将用于部分补偿年轻科学家（初级教师，研究生和博士后研究员）的旅行和住宿费用。会议预计将提供一个有效的论坛，讨论关键的科学问题，在异质外延生长不稳定性的重点是弹性应变诱导自组装。沿着评估该领域和未来方向的机会，预计将在大学、研究机构和行业之间建立新的联系。%由晶格失配或组成不均匀性引起的弹性应变为新型电子和光电器件的生产带来了挑战和机遇。在某些情况下，应变是有害的，导致有缺陷的或非平面的膜。另一方面，应变驱动的岛化为自组装纳米结构的生产提供了直接途径。半导体晶格失配材料具有深远的经济潜力，因为其应用范围广泛，涉及与计算、通信和信息处理相关的电子和光子学。对这一领域的进展和现状的评估沿着对最重要的发展的当前评估，将对理解和提高电子/光子材料在有益于社会的应用中的利用具有重要价值。

9900708PachavisA symposium will be held at the 1998 Fall MRS Meeting on "Growth Instabilities and Decomposition During Heteroepitaxy". The goal of the conference is to bring together both theoreticians and experimentalists from disciplines including physics, chemistry, materials science, and electrical engineering to address fundamentals and applications of growth instabilities occurring during a wide variety of thin film growth processes. A further objective is to stimulate collaboration and discussion between researchers, especially between young professionals and established experts and to identify critical issues for future research. The conference brings together industrial and academic scientists in an effort to encourage collaboration between these groups. Support from NSF will be used to partially compensate young scientists (junior faculty, graduate students and postdoctoral fellows) for travel and accommodation expenses. The conference is expected to provide an effective forum for discussion of critical scientific issues in growth instabilities during heteroepitaxy with a focus on elastic strain induced self assembly. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established between universities, research institutions, and industry.%%%Elastic strains, induced either by lattice mismatch or compositional inhomogenieties, present both challenges and opportunities for the production of novel electronic and optoelectronic devices. In some cases, strain is deleterious, leading to defective or non-planar films. On the other hand, strain-driven islanding provides a direct route for the production of self-assembled nanostructures. Semiconducting lattice-mismatched materials have far reaching economic potential since applications range broadly across electronics and photonics associated with computing, communications, and information processing. An evaluation of the progress and status of this field along with current assessments of the most important developments will be of great value to the understanding and enhanced utilization of electronic/photonic materials in applications beneficial to society.***