GOALI: Device Passivation with Novel Precursors

本研究的重点是利用新颖的前驱物和沉积技术来开发化合物半导体器件的稳定介电钝化层。 具有新颖前驱物及沉积技术的化合物半导体装置。 化合物半导体材料在高速、大功率微电子领域有着广阔的应用前景。 具有低缺陷、热稳定介电层的器件钝化是可靠的、长期的集成电路性能的先决条件。 通过使用新的前体，PI将试图最大限度地减少III-V族材料中可能导致不稳定性的氢夹杂物。 基于氘和氟的前体的使用将用于氮化硅化合物的生产。 将使用射频和微波等离子体反应器，并评估各种沉积策略的影响。 光学发射和质谱将用于了解等离子体化学。 FTIR和XPS将是检测各种化学基团成键的技术。 TEM将用于检查失效分析的机制。 所提出的研究课题是先进半导体器件界的一个严重问题。 在确定低温工艺以制造更好的介电钝化层方面的进展对于各种各样的计算和电子控制应用来说可能是相当大的技术和经济效益。

This research effort is focused on the development of stable dielectric passivation layers for compound semiconductor devices with novel precursors and deposition techniques. Compound semiconductor devices with novel precursors and deposition techniques. Compound semiconductor materials show promise for high speed, high power microelectronics applicaitons. Device passivation with a low defect, thermally stable dielectric layer is a prerequisite for reliable, long term integrated circuit performance. Through the use of novel precursors, the PI will attempt to minimize hydrogen inclusion which can lead to instabilities, in III-V materials. The use of deuterium and fluorine based precursors will be used in the production fo silicon nitride compunds. Both radio frequency and microwave plasma reactors will be used and the effects of various deposition strategies will be evaluated. Optical emission and mass spectrscopy will be used to understand the plasma chemistry. FTIR and XPS will be the techniques for the the examination fo the bonding of varous chemical groups. TEM will be used to examine the mechanism of failure analysis. The topic fo the proposed research is a serious issue for the advanced semiconductor device community. Progress in identifying a low temperature process to make better dielectric passivation layers could be a considerable technological and economic benefit for a wide variety of computational and electronic control applications..