SBIR Phase I: Ferroelectric and Ferrite Films on GaAs Substrates - A Solution for True Monolithic-Microwave-Integrated Circuits

SBIR 第一阶段：GaAs 衬底上的铁电体和铁氧体薄膜 - 真正的单片微波集成电路的解决方案

• 批准号: 9960421
• 负责人: Hua Jiang
• 金额: $ 9.99万
• 依托单位: Corning Applied Technologies Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-01-01 至 2000-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9960421&HistoricalAwards=false
• 关键词: SBIR; Phase; Ferroelectric; Ferrite; Films

This Phase I SBIR proposal addresses a novel deposition process for the manufacture of multilayer films for monolithic microwave integrated circuits (MMICs). MMICs are essential for both commercial and military communication applications, such as satellite, GPS, and wireless phones. Each new generation of MMICs are characterized by their increased density, speed, and functionality, which, in turn, are the basis for lower cost and higher performance devices. Ferroelectric and ferrite film technology is a key to development of a MMIC system-on-a-chip. One substantial advantage of an MMIC chip would be the electric post-processing tuning of circuits in order to bring them within specification. However, such MMICs are not available now, because the high growth temperature of ferroelectric and ferrite films are not compatible to GaAs substrates. In this proposal, NZ Applied Technologies proposes to use a novel metalorganic chemical liquid deposition to fabricate high quality low-loss multilayer films on commercial GaAs substrates. This low-cost technique has the potential to reduce the film growth temperature significantly and to meet all the manufacturing requirements. If the proposed process is successful, miniaturization of true MMICs based on lumped-element designs could also become possible.The commercialization potential for this effort includes a new generation of monolithic microwave integrated circuits, such as on-chip VCOs (voltage controlled oscillators), high speed tunable IC (inductor-capacitor) filters, and tunable delay lines for phase arrays. These advanced systems will have application in the space, military, industrial, and consumer sectors.

这第一阶段SBIR建议解决了一个新的沉积工艺的单片微波集成电路（MMIC）的多层膜的制造。 MMIC对于商业和军事通信应用都是必不可少的，例如卫星、GPS和无线电话。 每一代新MMIC的特点是其密度、速度和功能的增加，而这些又是更低成本和更高性能器件的基础。 铁电和铁氧体薄膜技术是MMIC系统芯片发展的关键。MMIC芯片的一个实质性优点是电路的电后处理调谐，以便使它们符合规范。 然而，由于铁电和铁氧体薄膜的高生长温度与GaAs衬底不兼容，目前还不能获得这种MMIC。在该提案中，新西兰应用技术公司提出使用一种新型的金属有机化学液相沉积在商用GaAs衬底上制造高质量的低损耗多层膜。这种低成本的技术有可能大大降低薄膜生长温度，并满足所有的制造要求。 如果所提出的工艺成功，基于集总元件设计的真正MMIC的小型化也将成为可能，这一努力的商业化潜力包括新一代单片微波集成电路，如片上VCO（压控振荡器），高速可调IC（电感电容器）滤波器，和可调延迟线的相位阵列。这些先进的系统将在太空、军事、工业和消费领域得到应用。