课题基金 / 基金详情

POWRE: Evaluation of AgGaS2 and AgGaSe2 as Laser Active Materials

POWRE: Evaluation of AgGaS2 and AgGaSe2 as Laser Active Materials
POWRE:AgGaS2 和 AgGaSe2 作为激光活性材料的评估
批准号:
9973866
负责人:
Mary Ellen Zvanut
金额:
$7.21万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1999
资助国家:
美国
项目状态:
已结题
起止时间:
1999-06-01 至 2001-11-30

项目摘要

项目成果

Mary Ellen Zvanut的其他基金

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中文摘要
翻译
本课题的目的是确定AgGaS2和AgGaSe2等三元黄铜矿中的点缺陷和杂质。这些材料是中红外(2 ~ 20um)光谱区域激光辐射频率上或下转换的有前途的非线性光学晶体。该方法是基于电子顺磁共振(EPR)光谱的使用。重点是晶体掺杂铬的目的,使激光有效介质适合于中红外。目前服务于这个范围的激光器需要仔细的晶体对准,并有其他敏感的操作要求。基于掺杂黄铜矿的激光器有望相对简单地操作。这种系统对于各种分子物种的科学研究以及需要大气透明度的商业或军事应用都很重要。这是在研究和教育领域妇女专业机会(POWRE)计划下提供的一项研究加强补助金。该研究将为理解和发展光子材料的先进技术应用提供基础材料科学知识。该跨学科项目涉及物理和材料科学领域的合作,并通过将研究生和本科生参与到与课堂活动相关的研究中来强调研究与教育的整合。该项目由材料研究部和MPS OMA(多学科活动办公室)共同支持。***
英文摘要
The goal of this project is to identify point defects and impurities in ternary chalcopyrites such as AgGaS2 and AgGaSe2. These materials are promising nonlinear optical (NLO) crystals for laser radiation frequency up- or down- conversion in the middle infrared (2-20 um) spectral region. The approach is based on the use of electron paramagnetic resonance (EPR) spectroscopy. The focus is on crystals doped with Cr for the purpose of making a laser active medium suitable for the mid-IR. The lasers that presently serve this range demand careful crystal alignment and have other sensitive operation requirements. The doped chalcopyrite-based lasers are expected to be comparatively simple to operate. Such systems are important for scientific studies of a variety of molecular species and for commercial or military applications requiring atmospheric transparency. %%% This is a research enhancement grant made under the Professional Opportunities for Women in Research and Education (POWRE) program. The research will contribute basic materials science knowledge relevant to the understanding and development of photonic materials for advanced technological applications. The interdisciplinary project involves collaborations across physics and materials science, and also places emphasis on the integration of research and education by incorporating graduate and undergraduate student participation into research related to classroom activities. The project is co-supported by the Division of Materials Research, and the MPS OMA(Office of Multidisciplinary Activities). ***
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Charge Transfer in Oxide Semiconductors from a Defect's Point of View
  • 批准号:
    1904325
  • 项目类别:
    Standard Grant
  • 资助金额:
    $41.35万
  • 财政年份:
    2019
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
GOALI:A Study of Point Defects in Thick, Free-Standing Acceptor-Doped GaN
  • 批准号:
    1606765
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.2万
  • 财政年份:
    2016
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
GOALI: Charge Transfer in Semi-Insulating GaN
  • 批准号:
    1308446
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $36.8万
  • 财政年份:
    2013
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
Understanding p-Type Doping in GaN: the Role of Mg
  • 批准号:
    1006163
  • 项目类别:
    Standard Grant
  • 资助金额:
    $22.99万
  • 财政年份:
    2010
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
国内基金
海外基金
基于重要农地保护LESA(Land Evaluation and Site Assessment)体系思想的高标准基本农田建设研究
  • 批准号:
    41340011
  • 项目类别:
    专项基金项目
  • 资助金额:
    20.0万元
  • 批准年份:
    2013
  • 负责人:
    钱凤魁
  • 依托单位: