GOALI: Potential of the C-Face of SiC in Device Electronics

GOALI：SiC C 面在设备电子领域的潜力

• 批准号: 9978561
• 负责人: Mary Ellen Zvanut
• 金额: $ 13.5万
• 依托单位: University of Alabama at Birmingham
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-09-01 至 2003-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9978561&HistoricalAwards=false
• 关键词: GOALI; Potential; Face; SiC; Device

9978561ZvanutFor switching technology involving metal-oxide-semiconductor (MOS) devices, SiC is a promising candidate to replace Si because it may be thermally oxidized to form the insulating SiO2 layer, and it lattice matches well with an alternative insulator, A1N. Most SiC studies show that devices built on the C-face (000-1) are inferior to those produced on the Siface (0001), but there are few investigations that address methods of improving the C-face. The PI's will conduct electrical measurements on MOS capacitors formed from the C-face and Siface of SiC, and they will investigate a variety of oxidation and post-oxidation treatments to look into the possibility of improving C-face MOS devices. Recognizing the tendency for the C-face to graphitize more readily than the Si-face will provide a starting point in their search to find conditions which optimize the structural and electrical quality of carbon-face devices.The proposed work has potential for advancing high power device technology in several ways. Ultimately, the work should produce a recipe for making C-face MOS structures free from the difficulties which plague Si-face structures. In the process, the PI's likely could improve Si-face devices; thus, they open the way to a variety of SiC-based MOS devices utilizing both the Si- and C-faces. On a more fundamental level, the systematic series of controlled experiments proposed should reveal a better understanding of the differences between the two faces.***

对于涉及金属氧化物半导体（MOS）器件的开关技术，SiC是替代Si的有希望的候选者，因为它可以被热氧化以形成绝缘SiO2层，并且它的晶格与替代绝缘体AlN匹配良好。 大多数SiC研究表明，在C面（000-1）上制造的器件不如在Si面（0001）上制造的器件，但很少有研究涉及改善C面的方法。PI将对由SiC的C面和Siface形成的MOS电容器进行电气测量，并将研究各种氧化和氧化后处理，以研究改进C面MOS器件的可能性。 认识到C面比Si面更容易石墨化的趋势，将为他们寻找优化碳面器件结构和电气质量的条件提供一个起点。 最终，这项工作应该产生一个配方，使C面MOS结构摆脱困扰Si面结构的困难。 在此过程中，PI可能会改善Si面器件;因此，它们为利用Si面和C面的各种SiC基MOS器件开辟了道路。 在更基本的层面上，提出的一系列系统的对照实验应该能更好地理解两张面孔之间的差异。