Microscopic Study of Diamond Films: Electronic Properties and Point Defects

9310439 Zvanut该项目旨在研究化学气相沉积(CVD)生长的金刚石薄膜中缺陷的微观方面。电学测量，如稳态电流测量、交流阻抗测量和金属氧化物半导体(MOS)器件测量将被用来表征金刚石薄膜。此外，强大的电子顺磁共振(PER)光谱将被用来在原子水平上提取关于缺陷和杂质的重要信息。这里提出的研究将提供对薄膜钻石的绝缘和半导体特性的更近距离的观察，特别是那些与设备应用相关的特性。例如，由于MOS器件必须能够承受持续的电压应力，我们将研究合成金刚石薄膜的击穿电场，以测试各种制造工艺的效果。此外，长期电流的影响将从电子和空穴捕获动力学和能量学的角度进行讨论。拟议的项目将解决绝缘金刚石膜的这些特性以及半导体钻石的特性。***

9310439 Zvanut This project is designed to study the microscopic aspects of defects in diamond thin films grown by chemical vapor deposition (CVD). Electrical measurements such as steady state current measurements, ac impedance measurements, and metal-oxide-semiconductor (MOS) device measurements will be used to characterize the diamond film. In addition, the powerful spectroscopy of electron paramagetic resonance (PER) will be employed to extract important information about defects and impurities at the atomic level. The investigation proposed here will provide closer look at the insulating and semiconducting properties of thin film diamond particularly those properties related to device applications. For example, since a MOS device must be capable of withstanding continued voltage stress, we will study the breakdown field of synthetic diamond films to test the effects of various fabrication procedures. Furthermore, the effects of long term current flow will be addressed in terms of electron and hole trapping kinetics and energetic. The proposed project will address these properties of the insulating diamond film as well as properties of the semiconducting diamond. ***