IMR: Acquisition Of An Electron Paramagnetic Resonance Spectrometer For Defect Analysis Research And Materials Physics Education
IMR: Acquisition Of An Electron Paramagnetic Resonance Spectrometer For Defect Analysis Research And Materials Physics Education
批准号:
0414141
负责人:
Mary Ellen Zvanut
金额:
$0.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-08-01 至 2006-07-31
中文摘要
EPR以其确定各种材料中点缺陷的详细电子结构的能力而闻名。几十年的研究已经产生了一个巨大的缺陷数据库,因此今天这项技术也可以作为一种通用的表征工具。该技术的双重性质使其既可用于重大研究调查,也可用于基础教育和培训。研究金刚石薄膜的学生和研究过渡金属配合物中电子转移反应的化学学生都使用该仪器来进一步研究。灵敏度对我们来说是一个特别重要的问题,因为电子材料中的缺陷密度通常低于1 / 105,而目前系统的信噪比仅为其最佳值的40%。这导致了广泛的信号平均,限制了我们检测某些中心的能力。新系统将最大限度地减少数据采集时间,并允许观察到更少的缺陷。我们利用EPR的研究直接影响半导体行业,为生产高功率、高频率应用所需的高质量材料提供了低浓度的内在缺陷和杂质的基本理解。电子顺磁共振用于研究各种材料中的电子缺陷。该技术用于重大研究调查以及基础教育和培训。我们正在努力提高我们仪器的检测限,以便研究在较低浓度水平下发生的缺陷。我们利用EPR的研究直接影响半导体行业,为生产高功率、高频率应用所需的高质量材料提供了低浓度的内在缺陷和杂质的基本理解。
英文摘要
EPR is known for its ability to determine the detailed electronic structure of point defects in a wide variety of materials. Decades of investigations have produced a huge database of defects so that today the technique may also be used as a general characterization tool. The dual nature of the technique enables its use for major research investigations as well as for basic education and training. Students studying diamond thin films and chemistry students probing electron transfer reactions in transition metal complexes have used the instrument to further their studies. Sensitivity is a particularly significant issue for us because defect densities in electronic materials are generally below 1 part in 105, and the signal-to-noise ratio of the present system is only 40% of its optimal value. This results in extensive signal averaging and limits our ability to detect certain centers. The new system will minimize data acquisition time and allow for lower numbers of defects to be observed. Our studies utilizing EPR directly affect the semiconductor industry by contributing a basic understanding of the low concentration of intrinsic defects and impurities required to produce the high quality material necessary for the high power, high frequency applications. Electronic paramagnetic resonance is used to study electronic defects in a wide variety of materials. The technique is used for major research investigations as well as for basic education and training. We are working to improve the detection limits of our instruments in order to study defects that occur at lower concentration levels. Our studies utilizing EPR directly affect the semiconductor industry by contributing a basic understanding of the low concentration of intrinsic defects and impurities required to produce the high quality material necessary for the high power, high frequency applications.
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会议论文
Charge Transfer in Oxide Semiconductors from a Defect's Point of View
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批准号:1904325
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项目类别:Standard Grant
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资助金额:$41.35万
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财政年份:2019
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负责人:Mary Ellen Zvanut
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依托单位:
GOALI:A Study of Point Defects in Thick, Free-Standing Acceptor-Doped GaN
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批准号:1606765
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项目类别:Standard Grant
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资助金额:$40.2万
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财政年份:2016
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负责人:Mary Ellen Zvanut
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依托单位:
GOALI: Charge Transfer in Semi-Insulating GaN
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批准号:1308446
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项目类别:Continuing Grant
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资助金额:$36.8万
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财政年份:2013
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负责人:Mary Ellen Zvanut
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依托单位:
Understanding p-Type Doping in GaN: the Role of Mg
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批准号:1006163
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项目类别:Standard Grant
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资助金额:$22.99万
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财政年份:2010
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负责人:Mary Ellen Zvanut
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依托单位:
Detection of the Structure and Electrical Level of Defects in Semi-Insulating SiC
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批准号:0506069
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2005
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负责人:Mary Ellen Zvanut
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依托单位:
GOALI: Potential of the C-Face of SiC in Device Electronics
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批准号:9978561
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项目类别:Continuing Grant
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资助金额:$13.5万
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财政年份:1999
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负责人:Mary Ellen Zvanut
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依托单位:
POWRE: Evaluation of AgGaS2 and AgGaSe2 as Laser Active Materials
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批准号:9973866
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项目类别:Standard Grant
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资助金额:$7.21万
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财政年份:1999
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负责人:Mary Ellen Zvanut
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依托单位:
Spectroscopic and Electrical Characterization of Buried Oxide Structures
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批准号:9422369
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项目类别:Standard Grant
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资助金额:$17.0万
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财政年份:1995
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负责人:Mary Ellen Zvanut
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依托单位:
Microscopic Study of Diamond Films: Electronic Properties and Point Defects
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批准号:9310439
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:1993
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负责人:Mary Ellen Zvanut
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依托单位:
海外基金