IMR: Acquisition Of An Electron Paramagnetic Resonance Spectrometer For Defect Analysis Research And Materials Physics Education

IMR：购买电子顺磁共振波谱仪用于缺陷分析研究和材料物理教育

• 批准号: 0414141
• 负责人: Mary Ellen Zvanut
• 金额: --
• 依托单位: University of Alabama at Birmingham
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-08-01 至 2006-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0414141&HistoricalAwards=false
• 关键词: IMR; Acquisition; Electron; Paramagnetic; Resonance

EPR is known for its ability to determine the detailed electronic structure of point defects in a wide variety of materials. Decades of investigations have produced a huge database of defects so that today the technique may also be used as a general characterization tool. The dual nature of the technique enables its use for major research investigations as well as for basic education and training. Students studying diamond thin films and chemistry students probing electron transfer reactions in transition metal complexes have used the instrument to further their studies. Sensitivity is a particularly significant issue for us because defect densities in electronic materials are generally below 1 part in 105, and the signal-to-noise ratio of the present system is only 40% of its optimal value. This results in extensive signal averaging and limits our ability to detect certain centers. The new system will minimize data acquisition time and allow for lower numbers of defects to be observed. Our studies utilizing EPR directly affect the semiconductor industry by contributing a basic understanding of the low concentration of intrinsic defects and impurities required to produce the high quality material necessary for the high power, high frequency applications. Electronic paramagnetic resonance is used to study electronic defects in a wide variety of materials. The technique is used for major research investigations as well as for basic education and training. We are working to improve the detection limits of our instruments in order to study defects that occur at lower concentration levels. Our studies utilizing EPR directly affect the semiconductor industry by contributing a basic understanding of the low concentration of intrinsic defects and impurities required to produce the high quality material necessary for the high power, high frequency applications.

EPR以其确定各种材料中点缺陷的详细电子结构的能力而闻名。 几十年的研究已经产生了巨大的缺陷数据库，因此今天该技术也可以用作通用表征工具。 该技术的双重性质使其能够用于主要的研究调查以及基础教育和培训。 研究金刚石薄膜的学生和探索过渡金属络合物中电子转移反应的化学学生已经使用该仪器来进一步研究。 灵敏度对我们来说是一个特别重要的问题，因为电子材料中的缺陷密度通常低于1/105，而本系统的信噪比仅为其最佳值的40%。 这会导致广泛的信号平均，并限制我们检测某些中心的能力。新系统将最大限度地减少数据采集时间，并允许观察到更少数量的缺陷。我们利用EPR进行的研究直接影响了半导体行业，因为我们对生产高功率、高频应用所需的高质量材料所需的低浓度本征缺陷和杂质有了基本的了解。 电子顺磁共振用于研究各种材料中的电子缺陷。 该技术用于重大研究调查以及基础教育和培训。 我们正在努力提高仪器的检测限，以研究在较低浓度水平下出现的缺陷。 我们利用EPR进行的研究直接影响了半导体行业，因为我们对生产高功率、高频应用所需的高质量材料所需的低浓度本征缺陷和杂质有了基本的了解。