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IMR: Acquisition Of An Electron Paramagnetic Resonance Spectrometer For Defect Analysis Research And Materials Physics Education

IMR: Acquisition Of An Electron Paramagnetic Resonance Spectrometer For Defect Analysis Research And Materials Physics Education
IMR:购买电子顺磁共振波谱仪用于缺陷分析研究和材料物理教育
批准号:
0414141
负责人:
Mary Ellen Zvanut
金额:
$0.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-08-01 至 2006-07-31

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中文摘要
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英文摘要
EPR is known for its ability to determine the detailed electronic structure of point defects in a wide variety of materials. Decades of investigations have produced a huge database of defects so that today the technique may also be used as a general characterization tool. The dual nature of the technique enables its use for major research investigations as well as for basic education and training. Students studying diamond thin films and chemistry students probing electron transfer reactions in transition metal complexes have used the instrument to further their studies. Sensitivity is a particularly significant issue for us because defect densities in electronic materials are generally below 1 part in 105, and the signal-to-noise ratio of the present system is only 40% of its optimal value. This results in extensive signal averaging and limits our ability to detect certain centers. The new system will minimize data acquisition time and allow for lower numbers of defects to be observed. Our studies utilizing EPR directly affect the semiconductor industry by contributing a basic understanding of the low concentration of intrinsic defects and impurities required to produce the high quality material necessary for the high power, high frequency applications. Electronic paramagnetic resonance is used to study electronic defects in a wide variety of materials. The technique is used for major research investigations as well as for basic education and training. We are working to improve the detection limits of our instruments in order to study defects that occur at lower concentration levels. Our studies utilizing EPR directly affect the semiconductor industry by contributing a basic understanding of the low concentration of intrinsic defects and impurities required to produce the high quality material necessary for the high power, high frequency applications.
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Charge Transfer in Oxide Semiconductors from a Defect's Point of View
  • 批准号:
    1904325
  • 项目类别:
    Standard Grant
  • 资助金额:
    $41.35万
  • 财政年份:
    2019
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
GOALI:A Study of Point Defects in Thick, Free-Standing Acceptor-Doped GaN
  • 批准号:
    1606765
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.2万
  • 财政年份:
    2016
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
GOALI: Charge Transfer in Semi-Insulating GaN
  • 批准号:
    1308446
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $36.8万
  • 财政年份:
    2013
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
Understanding p-Type Doping in GaN: the Role of Mg
  • 批准号:
    1006163
  • 项目类别:
    Standard Grant
  • 资助金额:
    $22.99万
  • 财政年份:
    2010
  • 负责人:
    Mary Ellen Zvanut
  • 依托单位:
海外基金