MRI: ACQUISITION OF INSTRUMENTATION FOR ULTRAFAST TERAHERTZ OPTOELECTRONIC FABRICATION AND CHARACTERIZATION

9977140 cheville这笔拨款将使俄克拉荷马州立大学能够购买用于半导体器件光刻处理的工具和飞秒光源，以支持在太赫兹（THz）频率下工作的最先进光电子器件的开发。这些仪器将放置在校园研究实验室综合体中，并整合到半导体器件，超大规模集成电路和超快光电子学的高年级本科实验课程中。俄克拉荷马州立大学（OSU）目前不存在与本科课程相关的研究设施，需要为俄克拉荷马州工业提供合格的毕业生，并为现有的强大的研究生光子学项目提供训练有素的候选人。俄勒冈州立大学在太赫兹光电子应用方面处于世界领先地位，所要求的设备将提供扩展太赫兹测量的能力，超越当前动态范围不足所施加的限制。太赫兹光电子学是基于亚皮秒光脉冲与微米尺度天线和传输线结构的集成。应用包括光谱学、下一代高速互连、电磁散射研究、成像和半导体表征。在该领域保持竞争力的关键是光刻电路制造能力，以便创建一个封闭的循环来快速设计，原型和测试新设备。制造能力的增加对于太赫兹光电子技术的快速发展至关重要。目前的设备制造依赖于位于纽约的IBM沃森实验室的设备。新设备的周转时间可能长达一年，严重影响了快速发展的能力

9977140ChevilleThis grant will enable Oklahoma State University to purchase tools for photolithographic processing of semiconductor devices and a femtosecond optical source to support development of state of-the-art optoelectronic devices operating at terahertz (THz) frequencies. These instruments will be located in an on-campus research laboratory complex, and integrated into upper division undergraduate laboratory courses in semiconductor devices, VLSI, and ultrafast optoelectronics. Such research facilities tied to undergraduate courses do not currently exist at Oklahoma State University (OSU), and are needed to provide qualified graduates to Oklahoma industry, and as a source of well trained candidates for the strong existing graduate photonics program.OSU is the world leader in application of THz optoelectronics, and the requested equipment will provide capabilities to extend THz measurements beyond current limitations imposed by insufficient dynamic range. THz optoelectronics is based on the integration of sub-picosecond optical pulses with micron scale antenna and transmission line structures. Applications include spectroscopy, next generation high speed interconnects, electromagnetic scattering studies, imaging, and semiconductor characterization. Key to remaining competitive in this area is the capability of photolithographic circuit fabrication in order to create a closed cycle to rapidly design, prototype, and test new devices. The addition of fabrication capability is critical for rapid development of THz optoelectronics. Currently device fabrication relies on facilities located at the IBM Watson labs in New York. The turnaround time on new devices can be as long as one year, seriously compromising the ability to make rapid advances.***