课题基金 / 基金详情

MRI: ACQUISITION OF INSTRUMENTATION FOR ULTRAFAST TERAHERTZ OPTOELECTRONIC FABRICATION AND CHARACTERIZATION

MRI: ACQUISITION OF INSTRUMENTATION FOR ULTRAFAST TERAHERTZ OPTOELECTRONIC FABRICATION AND CHARACTERIZATION
MRI:获取超快太赫兹光电制造和表征仪器
批准号:
9977140
负责人:
Daniel Grischkowsky
金额:
$19.35万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1999
资助国家:
美国
项目状态:
已结题
起止时间:
1999-09-01 至 2001-11-30

项目摘要

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中文摘要
翻译
9977140 Cheville这笔赠款将使俄克拉荷马州州立大学能够购买用于半导体器件和飞秒光源的激光加工的工具,以支持在太赫兹(THz)频率下工作的最先进的光电器件的开发。 这些仪器将位于校园内的研究实验室综合体,并集成到半导体器件,超大规模集成电路和超快光电子学的高年级本科实验室课程中。 这种与本科课程相关的研究设施目前在俄克拉荷马州州立大学(OSU)并不存在,并且需要为俄克拉荷马州工业提供合格的毕业生,并作为强大的现有研究生光子学计划的训练有素的候选人的来源。并且所请求的设备将提供将THz测量扩展到由不足的动态范围所施加的电流限制之外的能力。 太赫兹光电子学是基于亚皮秒光脉冲与微米级天线和传输线结构的集成。 应用包括光谱学、下一代高速互连、电磁散射研究、成像和半导体表征。 在这一领域保持竞争力的关键是集成电路制造的能力,以便创建一个封闭的循环来快速设计,原型和测试新器件。 制造能力的增加是THz光电子学快速发展的关键。 目前,设备制造依赖于位于纽约的IBM沃森实验室的设施。 新设备的周转时间可能长达一年,严重影响了快速发展的能力。
英文摘要
9977140ChevilleThis grant will enable Oklahoma State University to purchase tools for photolithographic processing of semiconductor devices and a femtosecond optical source to support development of state of-the-art optoelectronic devices operating at terahertz (THz) frequencies. These instruments will be located in an on-campus research laboratory complex, and integrated into upper division undergraduate laboratory courses in semiconductor devices, VLSI, and ultrafast optoelectronics. Such research facilities tied to undergraduate courses do not currently exist at Oklahoma State University (OSU), and are needed to provide qualified graduates to Oklahoma industry, and as a source of well trained candidates for the strong existing graduate photonics program.OSU is the world leader in application of THz optoelectronics, and the requested equipment will provide capabilities to extend THz measurements beyond current limitations imposed by insufficient dynamic range. THz optoelectronics is based on the integration of sub-picosecond optical pulses with micron scale antenna and transmission line structures. Applications include spectroscopy, next generation high speed interconnects, electromagnetic scattering studies, imaging, and semiconductor characterization. Key to remaining competitive in this area is the capability of photolithographic circuit fabrication in order to create a closed cycle to rapidly design, prototype, and test new devices. The addition of fabrication capability is critical for rapid development of THz optoelectronics. Currently device fabrication relies on facilities located at the IBM Watson labs in New York. The turnaround time on new devices can be as long as one year, seriously compromising the ability to make rapid advances.***
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THz Surface Waves, Waveguide THz-TDS and the 2D-TEM Plane
  • 批准号:
    0757680
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $44.95万
  • 财政年份:
    2008
  • 负责人:
    Daniel Grischkowsky
  • 依托单位:
Two Dimensional THz Photonics and Waveguide THz-TDS
  • 批准号:
    0456281
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2005
  • 负责人:
    Daniel Grischkowsky
  • 依托单位:
Unique Applications of THz Time-Domain Spectroscopy and Waveguide THz-TDS
  • 批准号:
    0139278
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $52.5万
  • 财政年份:
    2002
  • 负责人:
    Daniel Grischkowsky
  • 依托单位:
THz Time-Domain Spectroscopy, THz Coherent Transients and THz Impulse Ranging
  • 批准号:
    9731201
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $47.83万
  • 财政年份:
    1998
  • 负责人:
    Daniel Grischkowsky
  • 依托单位:
海外基金