Quantitative Evaluation of Strength Degradation at Interfaces in IC Packages and Formulation of a Fundamental Mechanical Device Reliability Strategy

IC 封装界面强度退化的定量评估以及基本机械器件可靠性策略的制定

• 批准号: 0000334
• 负责人: Vijay Gupta
• 金额: $ 21万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-08-01 至 2003-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0000334&HistoricalAwards=false
• 关键词: Quantitative; Evaluation; Strength; Degradation; Interfaces

Interfaces in package assemblies where delaminations during processing and service are identified. A fundamental approach for designing and predicting the mechanical reliability of these interfaces is proposed, with a view to replace the current empirical and rather time-consuming approaches that utilize accelerated test protocols. Implementation of the proposed strategy requires (1) the development of a fundamental interface-strength-measuring tool capable of testing interfaces, in-situ, in actual device and package structures, (2) measurement of the tensile strength, in-situ, of the selected interface as a function of humidity, temperature, and time variables, and (3) quantification of the moisture content using FTIR and thermogravimetric analyses on each tested sample. These will result in "interface strength charts" for predicting degradation at the selected interface for varying humidity and temperature conditions. Well developed simulation codes can then predict stress concentrations, moisture accumulation, and temperature rise at any of the interfaces within the package assembly for determining (a) whether the interface will be able to survive processing and system integration cycles during the design phase itself, prior to any IC fabrication and packaging, and (b) the level of interface strength needed at the time of manufacturing for ensuring a prescribed service life. The above procedure will first be demonstrated by studying the underfill/Si3N4 passivation layer interface. Measurement of the interface tensile strength, in-situ, will be accomplished by modifying a laser spallation method, developed previously by the PI.

包装组件中的接口，其中标识了处理和服务期间的分层。提出了一种设计和预测这些界面机械可靠性的基本方法，以期取代目前使用加速测试协议的经验方法和相当耗时的方法。实施建议的策略需要(1)开发一种基本的界面强度测量工具，该工具能够现场测试实际器件和封装结构中的界面，(2)作为湿度、温度和时间变量的函数原位测量所选界面的抗拉强度，以及(3)使用FTIR和热重分析对每个测试样品的水分含量进行量化。这些结果将产生“界面强度图表”，用于预测所选界面在不同湿度和温度条件下的退化。然后，经过良好开发的模拟代码可以预测封装组件内任何界面处的应力集中、水分累积和温度升高，以确定(A)界面是否能够在任何IC制造和封装之前的设计阶段本身的处理和系统集成周期中幸存下来，以及(B)在制造时为确保规定的使用寿命所需的界面强度水平。上述过程将首先通过研究底部填充/Si3N4钝化层界面来演示。界面拉伸强度的现场测量将通过修改由PI先前开发的激光散裂方法来完成。