Plasma Chemistry Study in Plasma Doping

等离子体掺杂中的等离子体化学研究

• 批准号: 0001378
• 负责人: Chung Chan
• 金额: --
• 依托单位: Northeastern University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-08-15 至 2003-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0001378&HistoricalAwards=false
• 关键词: Plasma; Chemistry; Study; Doping

0001378ChanThe objective of this proposed work is to explore plasma chemistry in Plasma Doping (PD) process and the development of in-situ diagnostics. The goals are: (1) to understand the characteristics of dopant ions in current dopant plasmas; (2) to experiment with new type of dopant plasmas with emphasis on the safety aspect; (3) to develop an accurate in-situ dose measurement technique; and (4) to develop analytical and numerical models for better predictions and control on doping profiles. The research will provide more precise and broader knowledge of processes that have significant plasma chemistry effects. In particular, present study can help the PI's optimize dopant recipes, process conditions, and provide a basis for the design and the calibration of implantation dose measurement.The approaches to achieve the above objective include experimental study, analytical modeling and simulation. Plasma doping experiments with varied process parameters and gas recipes will be performed. The simulations will be performed using existing tools such as PDP2, Crystal-TRIM etc. Plasma chemistry will be investigated by both analyzing the plasma components in the chamber and the dopant profiles in the implanted wafers. Since plasma components may be altered by target bias voltage, the emphasis will be put on the analysis of the implanted wafers and the development of in-situ diagnostics. A dynamic sheath model of multispecies plasma will be used to provide a basic function for fitting the experimental SIMS data of doping profile. Simulation tool Crystal-TRIM, which can simulate channeling effect, will be used to find implantation straggling and ranges. The influence of ion energy distribution, multiple ion species, pre-amorphaization and dopant diffusion enhanced by thermal effect and co-implanted non-dopant ions such as hydrogen and nitrogen, will be considered.***

0001378 Chan本研究的目的是探索等离子体掺杂（PD）过程中的等离子体化学和原位诊断的发展。 目标是：（1）了解当前掺杂剂等离子体中掺杂剂离子的特性;（2）实验新型掺杂剂等离子体，重点放在安全方面;（3）开发精确的原位剂量测量技术;以及（4）开发分析和数值模型，以便更好地预测和控制掺杂分布。 这项研究将提供更精确和更广泛的知识，具有显着的等离子体化学效应的过程。 本文的研究可以帮助PI优化掺杂配方和工艺条件，并为注入剂量测量的设计和校准提供依据。实现上述目标的途径包括实验研究、解析建模和模拟。 等离子体掺杂实验与不同的工艺参数和气体配方将进行。 模拟将使用现有的工具，如PDP 2，晶体TRIM等进行等离子体化学将通过分析在腔室中的等离子体成分和在注入晶片的掺杂剂分布进行研究。 由于等离子体成分可能会被靶偏置电压改变，重点将放在注入晶片的分析和原位诊断的发展。 多组分等离子体的动态鞘层模型将被用来提供一个基本的函数来拟合掺杂分布的实验西姆斯数据。 模拟工具Crystal-TRIM可以模拟沟道效应，将用于找到注入离散和范围。 将考虑离子能量分布、多离子种类、预非晶化和由热效应和共注入的非掺杂剂离子（例如氢和氮）增强的掺杂剂扩散的影响。*