Plasma Chemistry Study in Plasma Doping

本研究的目的是探索等离子体掺杂（PD）过程中的等离子体化学和原位诊断的发展。目标是：(1)了解当前掺杂等离子体中掺杂离子的特性；(2)对新型掺杂等离子体进行实验，重点关注安全性；(3)开发精确的原位剂量测量技术；(4)建立分析和数值模型，以更好地预测和控制兴奋剂分布。这项研究将为具有重要等离子体化学效应的过程提供更精确和更广泛的知识。特别是本研究可以帮助PI优化掺杂剂配方、工艺条件，并为注入剂量测量的设计和校准提供依据。实现上述目标的方法包括实验研究、分析建模和仿真。将进行不同工艺参数和气体配方的等离子体掺杂实验。模拟将使用现有的工具，如PDP2， Crystal-TRIM等进行。等离子体化学将通过分析腔室中的等离子体成分和植入晶圆中的掺杂物分布来研究。由于目标偏置电压可能改变等离子体成分，因此重点将放在植入晶圆的分析和原位诊断的发展上。多种等离子体的动态鞘层模型将为拟合掺杂谱图的实验SIMS数据提供一个基本函数。利用模拟槽效应的仿真工具Crystal-TRIM来寻找注入散点和范围。将考虑离子能量分布、多离子种类、热效应增强的预非晶化和掺杂扩散以及共注入氢、氮等非掺杂离子的影响***

0001378ChanThe objective of this proposed work is to explore plasma chemistry in Plasma Doping (PD) process and the development of in-situ diagnostics. The goals are: (1) to understand the characteristics of dopant ions in current dopant plasmas; (2) to experiment with new type of dopant plasmas with emphasis on the safety aspect; (3) to develop an accurate in-situ dose measurement technique; and (4) to develop analytical and numerical models for better predictions and control on doping profiles. The research will provide more precise and broader knowledge of processes that have significant plasma chemistry effects. In particular, present study can help the PI's optimize dopant recipes, process conditions, and provide a basis for the design and the calibration of implantation dose measurement.The approaches to achieve the above objective include experimental study, analytical modeling and simulation. Plasma doping experiments with varied process parameters and gas recipes will be performed. The simulations will be performed using existing tools such as PDP2, Crystal-TRIM etc. Plasma chemistry will be investigated by both analyzing the plasma components in the chamber and the dopant profiles in the implanted wafers. Since plasma components may be altered by target bias voltage, the emphasis will be put on the analysis of the implanted wafers and the development of in-situ diagnostics. A dynamic sheath model of multispecies plasma will be used to provide a basic function for fitting the experimental SIMS data of doping profile. Simulation tool Crystal-TRIM, which can simulate channeling effect, will be used to find implantation straggling and ranges. The influence of ion energy distribution, multiple ion species, pre-amorphaization and dopant diffusion enhanced by thermal effect and co-implanted non-dopant ions such as hydrogen and nitrogen, will be considered.***