SBIR Phase I: A Source for High Rate Growth of Gallium Nitride Films

这个小型企业创新研究(SBIR)第一阶段项目是为了开发一种中性、高通量/通量的氮原子束光源，用于在大范围内高速生长III-V氮化物半导体材料。拟议中的信号源是基于物理科学公司S的专有中喷式发动机技术。这项技术采用了一种由涡流控制的无电极放电，而不是传统电源中通常使用的介质管。放电是在1大气压下形成的，这导致了有效的离子复合和无电荷的束流。以前，使用气体温度约3000K的AMID喷注已经证明了高通量、高注量的氧和氟原子束。然而，要产生氮原子束，必须改变中间喷注的基本构型，以获得解离氮气所需的5000K温度。在第一阶段，PSI将通过建模检查至少两种新的配置，SelectOne，并制造和测试氮的实验源。我们将通过详细的数值模拟来研究氮束与砷源的结合技术。如果成功，PSI将展示一种注量约为10 21个原子/S的无电荷氮原子源，比现有源产生的注量高2至3个数量级。该项目将开发一种用于生长III-氮化物材料的无电荷、高通量/注量的氮原子束，可以取代现有的等离子体工具。该光源可以在更大面积的高质量材料上实现更高的生长速率，适用于制造大功率/高温半导体器件和蓝色照明光源(包括平板显示器的光源)。

This Small Business Innovation Research (SBIR) Phase I project is for the development of a neutral, highflux/fluence nitrogen atom beam source for application to the high rate growth of III-V nitridesemiconducting materials over large areas. The proposed source is based on Physical Sciences Inc.'s(PSI's) proprietary MID-JET technology. This technology employs an electrode-less dischargecontained by vortex flow, rather than a dielectric tube commonly used in traditional sources. Thedischarge is formed at 1 atm which results in efficient Ion recombination and a charge-free beam.Previously, high flux, high fluence oxygen and fluorine atom beams have been demonstrated using aMID-JET with a gas temperature of ~ 3000 K. However, to produce a nitrogen atom beam, the basicconfiguration of the MID-JET must be changed to obtain the 5000 K temperatures required todissociate nitrogen. In Phase I, PSI will examine at least two new configurations via modeling, selectone, and fabricate and test an experimental source for nitrogen. Techniques for combining the nitrogenbeam with a gallium source will be examined via detailed numerical modeling. If successful, PSI willdemonstrate a charge-free nitrogen atom source with a fluence of about 10 21 atoms/s, 2 to 3 orders ofmagnitude higher than that generated by currently available sources.This project will develop a charge-free, high flux/fluence nitrogen atom beam for the growth of III-Vnitride materials which can replace existing plasma-based tools. The source can allow higher growthrates over larger areas of high quality material with application to the fabrication of high power/hightemperature semiconductor devices and blue illumination sources (including those for flat paneldisplays).