SBIR Phase I: A Source for High Rate Growth of Gallium Nitride Films

SBIR 第一阶段：氮化镓薄膜高速生长的来源

• 批准号: 0060505
• 负责人: Michael Read
• 金额: $ 10万
• 依托单位: Physical Sciences Incorporated (PSI)
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-01-01 至 2001-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0060505&HistoricalAwards=false
• 关键词: SBIR; Phase; Source; Rate; Growth

This Small Business Innovation Research (SBIR) Phase I project is for the development of a neutral, highflux/fluence nitrogen atom beam source for application to the high rate growth of III-V nitridesemiconducting materials over large areas. The proposed source is based on Physical Sciences Inc.'s(PSI's) proprietary MID-JET technology. This technology employs an electrode-less dischargecontained by vortex flow, rather than a dielectric tube commonly used in traditional sources. Thedischarge is formed at 1 atm which results in efficient Ion recombination and a charge-free beam.Previously, high flux, high fluence oxygen and fluorine atom beams have been demonstrated using aMID-JET with a gas temperature of ~ 3000 K. However, to produce a nitrogen atom beam, the basicconfiguration of the MID-JET must be changed to obtain the 5000 K temperatures required todissociate nitrogen. In Phase I, PSI will examine at least two new configurations via modeling, selectone, and fabricate and test an experimental source for nitrogen. Techniques for combining the nitrogenbeam with a gallium source will be examined via detailed numerical modeling. If successful, PSI willdemonstrate a charge-free nitrogen atom source with a fluence of about 10 21 atoms/s, 2 to 3 orders ofmagnitude higher than that generated by currently available sources.This project will develop a charge-free, high flux/fluence nitrogen atom beam for the growth of III-Vnitride materials which can replace existing plasma-based tools. The source can allow higher growthrates over larger areas of high quality material with application to the fabrication of high power/hightemperature semiconductor devices and blue illumination sources (including those for flat paneldisplays).

这个小企业创新研究（SBIR）第一阶段项目是开发一个中性的，高通量/注量氮原子束源的应用程序的III-V氮化物半导体材料的大面积高速增长。 拟议的来源是基于物理科学公司。的（PSI的）专有MID-JET技术。 该技术采用涡流无电极放电，而不是传统源中常用的介电管。 放电在1个大气压下形成，产生有效的离子复合和无电荷束。以前，高通量、高注量的氧和氟原子束已经在气体温度为~ 3000 K的MID-JET上得到证实。然而，为了产生氮原子束，必须改变MID-JET的基本配置以获得离解氮所需的5000 K温度。在第一阶段，PSI将通过建模、选择、制造和测试一个实验性的氮源来检查至少两种新的配置。 结合氮束与镓源的技术将通过详细的数值模拟进行检查。 如果成功的话，PSI将展示一个无电荷的氮原子源，其注量约为10 21原子/秒，比目前可用的源产生的注量高2到3个数量级。该项目将开发一个无电荷的，高通量/注量的氮原子束，用于III-V氮化物材料的生长，可以取代现有的基于等离子体的工具。该源可以允许在更大面积的高质量材料上具有更高的生长速率，其应用于制造高功率/高温半导体器件和蓝色照明源（包括用于平板显示器的那些）。