Investigation of Nanoscale Electronic Properties and Transport in Semiconductors and Magnetic Materials
Investigation of Nanoscale Electronic Properties and Transport in Semiconductors and Magnetic Materials
批准号:
0072912
负责人:
Edward Yu
金额:
$29.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-07-01 至 2004-06-30
中文摘要
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英文摘要
This project addresses research centered on III-V nitride heterostructures and spin-dependent transport in magnetic materials. The approach employs proximal probes(scanning capacitance and tunneling microscopies), as well as a conducting proximal probe tip to perform local photoconductivity measurements for characterization of local electronic structure and charge transport properties in semiconductor and magnetic materials. The aim is to increase understanding of the nature and influence of defects and other structural features on material properties and device performance, serving to inform strategies for optimization of material quality and epitaxial layer design for a variety of device applications. Investigation of magnetic thin-film materials will focus on the development and application of spin-polarized current-voltage and conductance spectroscopy in combination with atomic and magnetic force microscopy to characterize spin-polarized current injection and spin-dependent carrier transport in magnetic thin-film materials. The approach allows studies at lengths scales as small as a few tens of nm of phenomena such as spin-polarized current injection into a variety of magnetic and magnetoresistive thin-film materials, spin-dependent carrier transport across single magnetic domain walls, and the detailed nature of spin-dependent tunneling processes in ferromagnet-insulator-ferromagnet tunnel junctions. %%%The project addresses basic research issues in topical areas of materials science with high technological relevance. High priority will be placed on training of graduate students in advanced nano-characterization techniques of increasing importance in modern materials and device engineering. In addition, the connection between studies of basic material properties and their role in device engineering and applications will be emphasized, thereby affording students opportunities for interaction with other university and industrial researchers working in related areas.***
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Center for Dynamics and Control of Materials
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批准号:2308817
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项目类别:Cooperative Agreement
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资助金额:$1800.0万
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财政年份:2023
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负责人:Edward Yu
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依托单位:
High performance solar photoelectrodes based on thin-film reactions
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批准号:2109842
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项目类别:Standard Grant
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资助金额:$37.11万
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财政年份:2021
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负责人:Edward Yu
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依托单位:
Nanoscale electromechanical coupling in atomically thin materials
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批准号:1905287
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项目类别:Continuing Grant
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资助金额:$42.87万
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财政年份:2019
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负责人:Edward Yu
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依托单位:
Center for Dynamics and Control of Materials
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批准号:1720595
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项目类别:Cooperative Agreement
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资助金额:$1560.0万
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财政年份:2017
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负责人:Edward Yu
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依托单位:
SuSChEM: Engineering Local Conductivity in MIS Photoelectrodes for Solar-Powered Water Splitting
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批准号:1702944
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项目类别:Standard Grant
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资助金额:$33.0万
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财政年份:2017
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负责人:Edward Yu
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依托单位:
Materials World Network: Nanostructured Materials for High-Efficiency Solar Energy Harvesting
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批准号:1311866
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项目类别:Standard Grant
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资助金额:$42.0万
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财政年份:2013
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负责人:Edward Yu
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依托单位:
GOALI: Quantum structures and nanostructure-based photon management for high-efficiency photovoltaics
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批准号:1128682
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项目类别:Continuing Grant
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资助金额:$37.0万
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财政年份:2011
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负责人:Edward Yu
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依托单位:
Materials World Network: Quantum Semiconductor Structures for High-Efficiency Photovoltaics
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批准号:1066430
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项目类别:Continuing Grant
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资助金额:$18.68万
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财政年份:2010
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负责人:Edward Yu
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依托单位:
Materials World Network: Quantum Semiconductor Structures for High-Efficiency Photovoltaics
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批准号:0806755
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项目类别:Continuing Grant
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资助金额:$38.4万
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财政年份:2008
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负责人:Edward Yu
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依托单位:
NIRT: Semiconductor Nanowire-Based Electronics and Optoelectronics
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批准号:0506902
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项目类别:Standard Grant
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资助金额:$100.0万
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财政年份:2005
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负责人:Edward Yu
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依托单位:
Nanoscale Physics of Nitride Semiconductor Heterostructures for Optical and Electronic Devices
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批准号:0405851
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项目类别:Continuing Grant
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资助金额:$36.56万
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财政年份:2004
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负责人:Edward Yu
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依托单位:
CAREER: Nanometer-scale Characterization and Fabrication of Semiconductor Heterostructures and Devices
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批准号:9501469
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项目类别:Continuing Grant
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资助金额:$25.0万
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财政年份:1995
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负责人:Edward Yu
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依托单位:
RESEARCH INITIATION AWARD: Characterization of semiconductor Heterostructures by Cross-sectional Scanning Tunneling Microscopy
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批准号:9307986
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项目类别:Standard Grant
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资助金额:$9.98万
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财政年份:1993
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负责人:Edward Yu
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依托单位:
海外基金