Acquisition of a High-Resolution X-ray Diffractometer for Characterization of Epitaxial Films

这份来自材料研究仪器项目和陶瓷项目的合同将允许密苏里大学罗拉分校获得一台高分辨率x射线衍射仪，用于研究电化学沉积的金属氧化物半导体外延薄膜。该仪器将配备双通道切割单色仪，带有电动z轴平移的100毫米扫描样品台，纹理角计，高动态范围检测器（0.15至1,300,000 cps）和三轴台。该仪器将进行倾斜和方位角扫描、摇摆曲线和极点图，用于纹理分析，并通过三轴阶段进行互反空间映射，以分离应变和晶格倾斜的影响。它还将用于通过低角x射线反射率测量薄膜厚度和界面粗糙度。衍射仪将成为金属氧化物半导体（如氧化亚铜、氧化铋、氧化锌和氧化铈）直接沉积在单晶衬底（如金、铂和硅）上的外延膜的主要表征工具。薄膜是在室温下由水溶液沉积而成的。薄膜相对于衬底的面外和面内取向都将被测量。由于大的晶格不匹配，经常形成重合晶格。薄膜相对于衬底的旋转将通过方位角扫描和极点图来测量。大的晶格错配导致许多外延膜形成自组装有序的纳米结构，由于它们的小尺寸可能表现出量子限制效应。该仪器将用于密苏里大学罗拉分校的NSF REU项目的学生培训和教育。这份来自材料研究仪器项目和陶瓷项目的合同将允许密苏里大学罗拉分校获得一台高分辨率x射线衍射仪，用于研究电化学沉积的金属氧化物半导体外延薄膜。薄膜被沉积在单晶衬底上，如硅片，使用一种非常便宜和简单的技术——电沉积。虽然电沉积技术用于金属沉积膜的制备已有多年历史，但金属氧化物半导体的沉积却是一个全新的领域。衍射仪将用于确定薄膜在单晶衬底上的取向。由于薄膜和衬底通常具有非常不同的晶体结构，许多这些薄膜形成自组装有序的纳米结构，以减少应变。这些纳米级结构可以被认为是“设计固体”，因为光学、电学和磁性可以通过改变尺寸来调节。该仪器将用于密苏里大学罗拉分校的NSF REU项目的学生培训和教育

0076338Switzer This award from the Instrumentation for Materials Research program and the Ceramics program will allow the University of Missouri Rolla to acquire a high resolution x-ray diffractometer for the study of electrochemically deposited epitaxial films of metal oxide semiconductors. The instrument will be equipped with dual channel-cut monochromators, 100 mm scanning sample stage with motorized z-translation, texture goniometer, high dynamic range detector (0.15 to 1,300,000 cps), and a triple axis stage. The instrument will perform tilt and azimuthal scans, rocking curves, and pole figures for texture analysis, and reciprocal space maps with the triple axis stage to separate the effects of strain and lattice tilt. It will also be used to measure film thickness and interface roughness by low-angle x-ray reflectivity. The diffractometer will be the main characterization tool for epitaxial films of metal oxide semiconductors such as cuprous oxide, bismuth oxide, zinc oxide, and ceric oxide deposited directly onto single crystal substrates such as gold, platinum, and silicon. The films are deposited from aqueous solution at room temperature. Both the out-of-plane and the in-plane orientation of the films relative to the substrate will be measured. Coincidence lattices often form due to the large lattice mismatch. The rotation of the film relative to the substrate will be measured by azimuthal scans and pole figures. The large lattice mismatch causes many of these epitaxial films to form self-assembled ordered nanostructures that may show quantum confinement effects due to their small size. The instrument will be available for student training and education within an NSF REU program at university of Missouri Rolla.This award from the Instrumentation for Materials Research program and the Ceramics program will allow the University of Missouri Rolla to acquire a high resolution x-ray diffractometer for the study of electrochemically deposited epitaxial films of metal oxide semiconductors. The films are deposited onto single crystal substrates such as silicon wafers using a very inexpensive and simple technique - electrodeposition. Although electrodeposition has been used for many years to produce deposit films of metals, the deposition of metal oxide semiconductors is very new. The diffractometer will be used to determine how the film is oriented on the single-crystal substrates. Since the film, and substrate often have very different crystal structures, many of these films form self-assembled ordered nanostuctures in order to reduce strain. These nanometer-scale structures can be considered "designer solids," because the optical, electrical, and magnetic properties can be tuned by changing the size. The instrument will be available for student training and education within an NSF REU program at university of Missouri Rolla