Epitaxial Electrodeposition of Metal Oxide Semiconductors

金属氧化物半导体的外延电沉积

• 批准号: 0071365
• 负责人: Jay Switzer
• 金额: $ 33.98万
• 依托单位: Missouri University of Science and Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-07-01 至 2003-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0071365&HistoricalAwards=false
• 关键词: Epitaxial; Electrodeposition; Metal; Oxide; Semiconductors

0071365SwitzerIn this project, epitaxial films of semiconducting metal oxides will be electrodeposited from solution precursors onto single-crystal substrates. The emphasis will be on epitaxial systems with high lattice mismatch, and on the synthesis of technologically-important semiconducting metal oxides that cannot by processed by traditional thermal methods. Epitaxial films are usually deposited by vapor deposition methods, such as chemical vapor deposition, at elevated temperatures onto a single crystal substrate chosen to have a lattice parameter as close as possible to that of the film. The project breaks with these traditions by using a simple low-temperature process, electrodeposition, to produce epitaxial systems with large lattice mismatch. The research project will consist of three phases: (i) Epitaxial electrodeposition and characterization of metal oxide semiconductors, (ii) Mechanistic studies of epitaxial electrodeposition, and (iii) Study of the transition from thermodynamic to kinetic control in epitaxial electrodeposition. The goals of the first phase of the research will be to establish the generality of epitaxial electrodeposition of semiconducting metal oxides and to determine both the out-of-plane and in-plane orientation of the epitaxial films relative to the single-crystal substrates. The second phase of the work will focus on the mechanism of epitaxial electrodeposition. The final phase of the work will explore the transition from thermodynamic to kinetic control of orientation. In this project, epitaxial films of oxide materials will be deposited onto single-crystal substrates using a low temperature process, electrodeposition. This low temperature technique allows the growth of films that cannot be obtained by the standard high-temperature techniques. Thin film materials are important in high tech applications such as information technology and telecommunications.

0071365瑞士在这个项目中，半导体金属氧化物的外延薄膜将从溶液前体电沉积到单晶衬底上。重点将放在具有高晶格失配的外延系统上，以及不能通过传统热方法处理的技术重要的半导体金属氧化物的合成上。 外延膜通常通过气相沉积方法（例如化学气相沉积）在升高的温度下沉积到单晶衬底上，所述单晶衬底被选择为具有尽可能接近膜的晶格参数的晶格参数。该项目打破了这些传统，通过使用一个简单的低温过程，电沉积，生产具有大晶格失配的外延系统。该研究项目将包括三个阶段：（一）外延电沉积和金属氧化物半导体的表征，（二）外延电沉积的机理研究，和（三）研究外延电沉积从热力学到动力学控制的过渡。研究的第一阶段的目标将是建立半导体金属氧化物的外延电沉积的一般性，并确定外延膜相对于单晶衬底的面外和面内取向。第二阶段的工作将集中在外延电沉积的机制。最后阶段的工作将探讨从热力学到动力学控制的方向过渡。在这个项目中，氧化物材料的外延膜将使用低温工艺，电沉积沉积到单晶衬底上。 这种低温技术允许通过标准高温技术不能获得的膜的生长。薄膜材料在诸如信息技术和电信的高科技应用中是重要的。