Acquisition of a Scanning Probe Microscope for Temperature-Dependent, Nanometer Scale Surface Characterization
获取扫描探针显微镜,用于温度相关的纳米级表面表征
基本信息
- 批准号:0079655
- 负责人:
- 金额:$ 19.65万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2000
- 资助国家:美国
- 起止时间:2000-08-15 至 2003-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
0079790SalanoThis grant makes possible the acquisition of a new instrument capable of producing 20nm patterned line widths, 10nm scanning electron microscopy (SEM) and 20nm scanning Auger microscopy (SAM), all while simultaneously providing atomic resolution with a scanning tunneling microscope (STM/AFM). The new instrument will be attached to the present molecular beam epitaxy (MBE) growth facility to provide expanded research opportunities with semiconductor quantum dots and wires for scientists and engineers at the University of Arkansas.Initial investigations are on the use of patterned substrates to produce laterally ordered self-assembled quantum dots and how to engineer strain to produce quantum dots. The project explores the underlying science important to the homogeneity of quantum dots, single electron spin dynamics in a quantum dot, and the optical behavior of a single quantum dot and the interaction between them. There will be an investigation of the possibility of forming photonic band structures from quantum dot arrays. While the new instrument is aimed at enhancing the research capability of faculty and students at the University of Arkansas, it will also play a significant role in a new Ph.D. degree program in electronic-photonic materials and devices supported under the NSF IGERT program. Nanotechnology is a new field, centered on the study of nanometer-sized materials. One nanometer, or one billionth of a meter, is one thousand times smaller than the smallest electronic devices that exist today. As a result, progress in scientific understanding on the nanoscale will play an important role in realizing future electronic and optoelectronic devices. This project makes possible the acquisition of a new instrument which when attached to the present molecular beam epitaxy growth facility at the University of Arkansas will provide the opportunity for scientists and engineers to explore and advance our current understanding of nanosize semiconductor quantum dots and wires. It will also play a significant role in a new Ph.D. degree program in electronic-photonic materials and devices, supported under the NSF/IGERT program. The educational goal of our program is to produce graduates that are fully prepared to drive the advancement of nanostructures. We will accomplish this goal by utilizing our molecular beam epitaxy facility, coupled with the newly acquired diagnostic and device fabrication tools made possible by this award, as a novel educational tool.
0079790salano1 .这笔拨款使获得一台能够生产20纳米图案线宽、10纳米扫描电子显微镜(SEM)和20纳米扫描俄歇显微镜(SAM)的新仪器成为可能,同时还能通过扫描隧道显微镜(STM/AFM)提供原子分辨率。新仪器将连接到现有的分子束外延(MBE)生长设施,为阿肯色大学的科学家和工程师提供更多的半导体量子点和量子线的研究机会。最初的研究是利用图案衬底产生横向有序自组装量子点,以及如何设计应变来产生量子点。该项目探索了对量子点的均匀性、量子点中的单电子自旋动力学、单个量子点的光学行为以及它们之间的相互作用重要的基础科学。将会研究从量子点阵列形成光子带结构的可能性。虽然新仪器旨在提高阿肯色大学教师和学生的研究能力,但它也将在NSF IGERT计划支持的电子光子材料和器件的新博士学位项目中发挥重要作用。纳米技术是一门以研究纳米材料为中心的新兴学科。一纳米,也就是十亿分之一米,比目前最小的电子设备还要小一千倍。因此,对纳米尺度的科学认识的进步将在实现未来的电子和光电子器件中发挥重要作用。该项目使获得一种新仪器成为可能,当它连接到阿肯色大学现有的分子束外延生长设施时,将为科学家和工程师提供探索和推进我们目前对纳米半导体量子点和线的理解的机会。它还将在NSF/IGERT计划支持的电子光子材料和器件的新博士学位课程中发挥重要作用。我们计划的教育目标是培养毕业生,充分准备推动纳米结构的进步。我们将利用我们的分子束外延设备,再加上新获得的诊断和设备制造工具,作为一种新的教育工具,来实现这一目标。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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David Lederman其他文献
The role of defects in the electrical properties of NbO2 thin film vertical devices
缺陷对NbO2薄膜垂直器件电性能的作用
- DOI:
- 发表时间:
2016 - 期刊:
- 影响因子:0
- 作者:
T. Joshi;P. Borisov;David Lederman;David Lederman - 通讯作者:
David Lederman
Photoexcitation and oxygen ordering in YBa2Cu3Ox films.
YBa2Cu3Ox 薄膜中的光激发和氧排序。
- DOI:
10.1103/physrevb.49.3675 - 发表时间:
1994 - 期刊:
- 影响因子:0
- 作者:
E. Osquiguil;M. Maenhoudt;B. Wuyts;Y. Bruynseraede;David Lederman;Ivan K. Schuller - 通讯作者:
Ivan K. Schuller
Modification of the Chemisorption Properties of Epitaxial Delafossite CuFeO2 Thin Films by Substituting Fe for Ga in the Crystal Structure
用 Fe 取代晶体结构中的 Ga 来改变外延铜铁矿 CuFeO2 薄膜的化学吸附性能
- DOI:
10.1007/s11244-018-0919-0 - 发表时间:
2018 - 期刊:
- 影响因子:3.6
- 作者:
Alejandro L. Cabrera;S. Rojas;T. Joshi;Qiang Wang;M. Holcomb;David Lederman - 通讯作者:
David Lederman
Direct visualization of relativistic quantum scars in graphene quantum dots
石墨烯量子点中相对论量子疤痕的直接可视化
- DOI:
10.1038/s41586-024-08190-6 - 发表时间:
2024-11-27 - 期刊:
- 影响因子:48.500
- 作者:
Zhehao Ge;Anton M. Graf;Joonas Keski-Rahkonen;Sergey Slizovskiy;Peter Polizogopoulos;Takashi Taniguchi;Kenji Watanabe;Ryan Van Haren;David Lederman;Vladimir I. Fal’ko;Eric J. Heller;Jairo Velasco - 通讯作者:
Jairo Velasco
David Lederman的其他文献
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{{ truncateString('David Lederman', 18)}}的其他基金
REU Site: A Materials Science and Engineering Research Experience Focusing on Sustainability
REU 网站:专注于可持续发展的材料科学与工程研究经验
- 批准号:
1950907 - 财政年份:2020
- 资助金额:
$ 19.65万 - 项目类别:
Standard Grant
REU Site: An Undergraduate Research Summer Program on Sustainable Materials
REU 网站:可持续材料本科生研究暑期项目
- 批准号:
1659744 - 财政年份:2017
- 资助金额:
$ 19.65万 - 项目类别:
Standard Grant
MRI: Acquisition of a Pulsed Laser Deposition System for Applications in Physics, Chemistry, Biology, Health Sciences, and Engineering.
MRI:购买脉冲激光沉积系统,用于物理、化学、生物学、健康科学和工程领域的应用。
- 批准号:
1039987 - 财政年份:2010
- 资助金额:
$ 19.65万 - 项目类别:
Standard Grant
Magnetic and Magnetoelectric Interactions at Interfaces in Ideal Antiferromagnetic Systems
理想反铁磁系统中界面处的磁和磁电相互作用
- 批准号:
0903861 - 财政年份:2009
- 资助金额:
$ 19.65万 - 项目类别:
Standard Grant
REU Site: Multifunctional Nanomaterials
REU 网站:多功能纳米材料
- 批准号:
0647763 - 财政年份:2007
- 资助金额:
$ 19.65万 - 项目类别:
Continuing Grant
Inter-American Materials Collaboration (CIAM): West Virginia University - Pontificia Universidad Catolica de Chile Collaboration on Multifunctional Materials
美洲材料合作组织 (CIAM):西弗吉尼亚大学 - 智利天主教大学多功能材料合作
- 批准号:
0502825 - 财政年份:2005
- 资助金额:
$ 19.65万 - 项目类别:
Continuing Grant
Exchange Bias of Ideal Antiferromagnetic Thin Films
理想反铁磁薄膜的交换偏置
- 批准号:
0400578 - 财政年份:2004
- 资助金额:
$ 19.65万 - 项目类别:
Standard Grant
An Integrated Approach to Making, Understanding, and Using Magnetic Single-Film and Multilayer Systems
制造、理解和使用磁性单膜和多层系统的综合方法
- 批准号:
0083046 - 财政年份:2000
- 资助金额:
$ 19.65万 - 项目类别:
Standard Grant
CAREER: Surface and Interface Properties of Antiferromagnetic Heterostructures
职业:反铁磁异质结构的表面和界面特性
- 批准号:
9734051 - 财政年份:1998
- 资助金额:
$ 19.65万 - 项目类别:
Continuing Grant
Acquisition of a Custom Molecular Beam Epitaxy System for Metals and Insulators
采购用于金属和绝缘体的定制分子束外延系统
- 批准号:
9625892 - 财政年份:1996
- 资助金额:
$ 19.65万 - 项目类别:
Standard Grant
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