Acquisition of a Scanning Probe Microscope for Temperature-Dependent, Nanometer Scale Surface Characterization

0079790salano1 .这笔拨款使获得一台能够生产20纳米图案线宽、10纳米扫描电子显微镜（SEM）和20纳米扫描俄歇显微镜（SAM）的新仪器成为可能，同时还能通过扫描隧道显微镜（STM/AFM）提供原子分辨率。新仪器将连接到现有的分子束外延（MBE）生长设施，为阿肯色大学的科学家和工程师提供更多的半导体量子点和量子线的研究机会。最初的研究是利用图案衬底产生横向有序自组装量子点，以及如何设计应变来产生量子点。该项目探索了对量子点的均匀性、量子点中的单电子自旋动力学、单个量子点的光学行为以及它们之间的相互作用重要的基础科学。将会研究从量子点阵列形成光子带结构的可能性。虽然新仪器旨在提高阿肯色大学教师和学生的研究能力，但它也将在NSF IGERT计划支持的电子光子材料和器件的新博士学位项目中发挥重要作用。纳米技术是一门以研究纳米材料为中心的新兴学科。一纳米，也就是十亿分之一米，比目前最小的电子设备还要小一千倍。因此，对纳米尺度的科学认识的进步将在实现未来的电子和光电子器件中发挥重要作用。该项目使获得一种新仪器成为可能，当它连接到阿肯色大学现有的分子束外延生长设施时，将为科学家和工程师提供探索和推进我们目前对纳米半导体量子点和线的理解的机会。它还将在NSF/IGERT计划支持的电子光子材料和器件的新博士学位课程中发挥重要作用。我们计划的教育目标是培养毕业生，充分准备推动纳米结构的进步。我们将利用我们的分子束外延设备，再加上新获得的诊断和设备制造工具，作为一种新的教育工具，来实现这一目标。

0079790SalanoThis grant makes possible the acquisition of a new instrument capable of producing 20nm patterned line widths, 10nm scanning electron microscopy (SEM) and 20nm scanning Auger microscopy (SAM), all while simultaneously providing atomic resolution with a scanning tunneling microscope (STM/AFM). The new instrument will be attached to the present molecular beam epitaxy (MBE) growth facility to provide expanded research opportunities with semiconductor quantum dots and wires for scientists and engineers at the University of Arkansas.Initial investigations are on the use of patterned substrates to produce laterally ordered self-assembled quantum dots and how to engineer strain to produce quantum dots. The project explores the underlying science important to the homogeneity of quantum dots, single electron spin dynamics in a quantum dot, and the optical behavior of a single quantum dot and the interaction between them. There will be an investigation of the possibility of forming photonic band structures from quantum dot arrays. While the new instrument is aimed at enhancing the research capability of faculty and students at the University of Arkansas, it will also play a significant role in a new Ph.D. degree program in electronic-photonic materials and devices supported under the NSF IGERT program. Nanotechnology is a new field, centered on the study of nanometer-sized materials. One nanometer, or one billionth of a meter, is one thousand times smaller than the smallest electronic devices that exist today. As a result, progress in scientific understanding on the nanoscale will play an important role in realizing future electronic and optoelectronic devices. This project makes possible the acquisition of a new instrument which when attached to the present molecular beam epitaxy growth facility at the University of Arkansas will provide the opportunity for scientists and engineers to explore and advance our current understanding of nanosize semiconductor quantum dots and wires. It will also play a significant role in a new Ph.D. degree program in electronic-photonic materials and devices, supported under the NSF/IGERT program. The educational goal of our program is to produce graduates that are fully prepared to drive the advancement of nanostructures. We will accomplish this goal by utilizing our molecular beam epitaxy facility, coupled with the newly acquired diagnostic and device fabrication tools made possible by this award, as a novel educational tool.