Exchange Bias of Ideal Antiferromagnetic Thin Films
理想反铁磁薄膜的交换偏置
基本信息
- 批准号:0400578
- 负责人:
- 金额:$ 33万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2004
- 资助国家:美国
- 起止时间:2004-04-01 至 2008-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The proposed research will focus on the study of exchange bias, a phenomenon resulting from the interface magnetic interactions between ferromagnetic and antiferromagnetic materials. Recent studies have established that the amount of interface disorder, defects in the antiferromagnet, the stoichiometry of the interface layer, and magnetic anisotropy energies influence the exchange bias, but the relative importance of these factors is not well understood. The main scientific objective of this proposal is to understand the effect of these parameters in well-characterized, ideal antiferromagnetic insulators, in order to eventually apply some of the ideas gleaned from these measurements to more complex antiferromagnets. Because the experiments will be carried out on relatively simple magnetic systems, the results will provide experimental data that could be explained using first principle models and simulated with a computer. In addition to the usual involvement of undergraduate and graduate students and postdocs, in the day-to-day research, there are three important educational activities associated with the proposed work: 1) involvement with science programs in middle schools in rural West Virginia; 2) development of interactive teaching tools for beginning physics lecture classes, and 3) development of new teaching materials for advanced laboratory. This program will have a significant impact on education from the 7-16 level and beyond, emphasizing science education for disadvantaged students in rural schools in West Virginia. This is especially important for the state of West Virginia, whose economy has traditionally relied on manufacturing and coal production, but where high-technology industry is increasingly playing an important role. Ferromagnetic materials are the basis of modern data storage devices, including computer hard disk drives. Modern magnetic sensors and proposed magnetic memory devices also rely on antiferromagnetic materials that can prevent ferromagnetic thin films from changing their magnetic properties when an external magnetic field is applied. The mechanism whereby this ferromagnetic-antiferromagnetic interaction occurs, called exchange bias, is not well understood. One of the problems is that many antiferromagnetic materials have very complex magnetic configurations which make the scientific data difficult to analyze. The main scientific objective of this proposal is to understand the effect by using well-characterized, ideal antiferromagnetic thin film materials whose properties are relatively simple and well understood. Because of the simplicity of these materials, the results will provide experimental data that could be explained using first principle models and simulated with a computer. The ideas gleaned from these studies will be applied to the more complex antiferromagnets used in magnetic electronic devices. The long-term result will be magnetic electronic devices with increased storage capacity, lower power consumption, and increased speed. In addition to the usual involvement of undergraduate and graduate students and postdocs, in the day-to-day research, there are three important educational activities associated with the proposed work: 1) involvement with science programs in middle schools in rural West Virginia; 2) development of interactive teaching tools for beginning physics lecture classes, and 3) development of new teaching materials for advanced laboratory. This program will have a significant impact on education from the 7-16 level and beyond, emphasizing science education for disadvantaged students in rural schools in West Virginia. This is especially important for the state of West Virginia, whose economy has traditionally relied on manufacturing and coal production, but where high-technology industry is increasingly playing an important role.
本研究将着重于交换偏置的研究,交换偏置是由铁磁和反铁磁材料之间的界面磁相互作用引起的一种现象。 最近的研究已经确定,界面无序的量,反铁磁体中的缺陷,界面层的化学计量,和磁各向异性能量影响交换偏置,但这些因素的相对重要性还没有很好地理解。 该提案的主要科学目标是了解这些参数在良好表征的理想反铁磁绝缘体中的影响,以便最终将从这些测量中收集到的一些想法应用于更复杂的反铁磁体。 由于实验将在相对简单的磁性系统上进行,因此结果将提供可以使用第一原理模型解释并用计算机模拟的实验数据。 除了本科生、研究生和博士后通常的参与,在日常的研究中,有三个重要的教育活动与拟议的工作相关:1)参与西弗吉尼亚州农村中学的科学计划; 2)为开始物理讲座开发交互式教学工具; 3)为高级实验室开发新的教材。 该计划将对7-16级及以上的教育产生重大影响,强调西弗吉尼亚州农村学校弱势学生的科学教育。 这对西弗吉尼亚州尤为重要,该州的经济传统上依赖制造业和煤炭生产,但高科技产业正在发挥越来越重要的作用。铁磁材料是现代数据存储设备的基础,包括计算机硬盘驱动器。 现代磁传感器和磁存储器件也依赖于反铁磁材料,可以防止铁磁薄膜在施加外部磁场时改变其磁特性。 这种铁磁-反铁磁相互作用发生的机制称为交换偏置,目前还没有很好的理解。 其中一个问题是,许多反铁磁材料具有非常复杂的磁性结构,这使得科学数据难以分析。 该提案的主要科学目标是通过使用特性良好的理想反铁磁薄膜材料来理解这种效应,这些材料的特性相对简单且易于理解。 由于这些材料的简单性,结果将提供实验数据,这些数据可以使用第一原理模型进行解释,并用计算机进行模拟。 从这些研究中收集到的想法将应用于磁电子器件中使用的更复杂的反铁磁体。 长期的结果将是磁性电子设备具有更大的存储容量,更低的功耗和更高的速度。 除了本科生、研究生和博士后通常的参与,在日常的研究中,有三个重要的教育活动与拟议的工作相关:1)参与西弗吉尼亚州农村中学的科学计划; 2)为开始物理讲座开发交互式教学工具; 3)为高级实验室开发新的教材。 该计划将对7-16级及以上的教育产生重大影响,强调西弗吉尼亚州农村学校弱势学生的科学教育。 这对西弗吉尼亚州尤为重要,该州的经济传统上依赖制造业和煤炭生产,但高科技产业正在发挥越来越重要的作用。
项目成果
期刊论文数量(0)
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David Lederman其他文献
The role of defects in the electrical properties of NbO2 thin film vertical devices
缺陷对NbO2薄膜垂直器件电性能的作用
- DOI:
- 发表时间:
2016 - 期刊:
- 影响因子:0
- 作者:
T. Joshi;P. Borisov;David Lederman;David Lederman - 通讯作者:
David Lederman
Photoexcitation and oxygen ordering in YBa2Cu3Ox films.
YBa2Cu3Ox 薄膜中的光激发和氧排序。
- DOI:
10.1103/physrevb.49.3675 - 发表时间:
1994 - 期刊:
- 影响因子:0
- 作者:
E. Osquiguil;M. Maenhoudt;B. Wuyts;Y. Bruynseraede;David Lederman;Ivan K. Schuller - 通讯作者:
Ivan K. Schuller
Modification of the Chemisorption Properties of Epitaxial Delafossite CuFeO2 Thin Films by Substituting Fe for Ga in the Crystal Structure
用 Fe 取代晶体结构中的 Ga 来改变外延铜铁矿 CuFeO2 薄膜的化学吸附性能
- DOI:
10.1007/s11244-018-0919-0 - 发表时间:
2018 - 期刊:
- 影响因子:3.6
- 作者:
Alejandro L. Cabrera;S. Rojas;T. Joshi;Qiang Wang;M. Holcomb;David Lederman - 通讯作者:
David Lederman
Direct visualization of relativistic quantum scars in graphene quantum dots
石墨烯量子点中相对论量子疤痕的直接可视化
- DOI:
10.1038/s41586-024-08190-6 - 发表时间:
2024-11-27 - 期刊:
- 影响因子:48.500
- 作者:
Zhehao Ge;Anton M. Graf;Joonas Keski-Rahkonen;Sergey Slizovskiy;Peter Polizogopoulos;Takashi Taniguchi;Kenji Watanabe;Ryan Van Haren;David Lederman;Vladimir I. Fal’ko;Eric J. Heller;Jairo Velasco - 通讯作者:
Jairo Velasco
David Lederman的其他文献
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{{ truncateString('David Lederman', 18)}}的其他基金
REU Site: A Materials Science and Engineering Research Experience Focusing on Sustainability
REU 网站:专注于可持续发展的材料科学与工程研究经验
- 批准号:
1950907 - 财政年份:2020
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
REU Site: An Undergraduate Research Summer Program on Sustainable Materials
REU 网站:可持续材料本科生研究暑期项目
- 批准号:
1659744 - 财政年份:2017
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
MRI: Acquisition of a Pulsed Laser Deposition System for Applications in Physics, Chemistry, Biology, Health Sciences, and Engineering.
MRI:购买脉冲激光沉积系统,用于物理、化学、生物学、健康科学和工程领域的应用。
- 批准号:
1039987 - 财政年份:2010
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
Magnetic and Magnetoelectric Interactions at Interfaces in Ideal Antiferromagnetic Systems
理想反铁磁系统中界面处的磁和磁电相互作用
- 批准号:
0903861 - 财政年份:2009
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
REU Site: Multifunctional Nanomaterials
REU 网站:多功能纳米材料
- 批准号:
0647763 - 财政年份:2007
- 资助金额:
$ 33万 - 项目类别:
Continuing Grant
Inter-American Materials Collaboration (CIAM): West Virginia University - Pontificia Universidad Catolica de Chile Collaboration on Multifunctional Materials
美洲材料合作组织 (CIAM):西弗吉尼亚大学 - 智利天主教大学多功能材料合作
- 批准号:
0502825 - 财政年份:2005
- 资助金额:
$ 33万 - 项目类别:
Continuing Grant
An Integrated Approach to Making, Understanding, and Using Magnetic Single-Film and Multilayer Systems
制造、理解和使用磁性单膜和多层系统的综合方法
- 批准号:
0083046 - 财政年份:2000
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
Acquisition of a Scanning Probe Microscope for Temperature-Dependent, Nanometer Scale Surface Characterization
获取扫描探针显微镜,用于温度相关的纳米级表面表征
- 批准号:
0079655 - 财政年份:2000
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
CAREER: Surface and Interface Properties of Antiferromagnetic Heterostructures
职业:反铁磁异质结构的表面和界面特性
- 批准号:
9734051 - 财政年份:1998
- 资助金额:
$ 33万 - 项目类别:
Continuing Grant
Acquisition of a Custom Molecular Beam Epitaxy System for Metals and Insulators
采购用于金属和绝缘体的定制分子束外延系统
- 批准号:
9625892 - 财政年份:1996
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
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