Micro-four-point Probe
Micro-four-point Probe
批准号:
0080931
负责人:
Peter Hesketh
金额:
$29.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-10-01 至 2005-03-31
中文摘要
0080931海斯凯将研究表面的微尺度阻抗和表面电势图的新方法。对AFM显微镜进行了改装,实现了微尺度的两点和四点探针阻抗测绘和微开尔文表面电势测绘。定制的尖端将被微制造,在单个悬臂上有多个尖端,在一个芯片上有多个悬臂。其工作原理与宏观四点探头相似,不同之处在于微细加工的四点探头在几个方面表现更好。首先,测试将产生导电性、掺杂分布和表面电位的亚微米精度测绘,是非破坏性的,并将提供来自周围环境的定量数据,扫描探头平台。将提供表面探针显微镜和MEMS制造方法方面的研究生培训。探针与现有原子力显微镜技术的兼容性将促进这些分析方法的商业化。
英文摘要
0080931HeskethAn investigation of new methods for micro-scale impedance and surface potential mapping of surfaces will be undertaken. The AFM microscope has been modified to carryout micro-scale two and four point probe impedance mapping, and micro-Kelvin surface potential mapping. Custom tips will be microfabricated with multiple tips on a single cantilever, and multiple cantilevers on a chip. The principle of operation is similar to the macro four-point probe except the microfabricated four-point probe will perform better in several respects. First, the testing will yield sub-micron precision mapping of conductivity, doping profiles and surface potential, be non-destructive and will providing quantitative data from an ambient environment, scanning probe platform. Graduate student training will be provided in surface probe microscopy and MEMS fabrication methods. Commercialization of these analysis methods will be facilitated by the probes compatibility with existing AFM technology.
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财政年份:2002
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依托单位:
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负责人:张春霞
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依托单位: