SGER: Design, growth, and characterization of quantum-well dots

PI和CO-PI建议设计、生长和表征量子势垒点。他们提出了通过分子束外延在势垒GaAs表面顶部生长InP应力源来生长这种新结构。InP应力源通过局域应变调制量子阱禁带，产生限制势。由于GaAs势垒和InP层之间的晶格失配，发生了应变诱导的2D-3D相变，形成了InP岛。他们将通过光致发光、激发光谱和时间分辨泵浦探测技术来表征该结构。他们将根据他的实验结果来优化结构。由于这是一个未经测试的新颖想法，SGER拨款是合适的，而且对他们获得量子井点的初步结果，从而在未来竞争NSF资金来说是至关重要的。这些设计得当的量子井和双量子势垒点在高效THz发射和探测方面有应用。

PI and CO-PI propose to design, grow, and characterize quantum-well dots. They propose to grow this novel structure by growing InP stressors on the top of barrier GaAs surface by molecular-beam epitaxy. The InP stressors modulate the quantum-well band-gap with local strain generating confinement potential. InP islands are formed due to a strain-induced 2D-3D transition, taking place, because of lattice misfit between the GaAs barrier and InP layer. They will characterize the structure by photoluminescence, excitation spectum, and time-resolved pump-probe technique. They will optimize the structure following his experimental results.Since this is an untested and novel idea, a SGER grant is appropriate and crucial for them to obtain preliminary results on the quantum-well dots, and therefore to compete for NSF funding in the future.These properly-designed quantum-well and double-quantum-barrier dots have applications in efficient THz emission and detection.