SGER: Design, growth, and characterization of quantum-well dots

SGER：量子阱点的设计、生长和表征

• 批准号: 0084750
• 负责人: Yujie Ding
• 金额: $ 5万
• 依托单位: University of Arkansas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-10-01 至 2002-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0084750&HistoricalAwards=false
• 关键词: SGER; Design; growth; characterization; quantum

PI and CO-PI propose to design, grow, and characterize quantum-well dots. They propose to grow this novel structure by growing InP stressors on the top of barrier GaAs surface by molecular-beam epitaxy. The InP stressors modulate the quantum-well band-gap with local strain generating confinement potential. InP islands are formed due to a strain-induced 2D-3D transition, taking place, because of lattice misfit between the GaAs barrier and InP layer. They will characterize the structure by photoluminescence, excitation spectum, and time-resolved pump-probe technique. They will optimize the structure following his experimental results.Since this is an untested and novel idea, a SGER grant is appropriate and crucial for them to obtain preliminary results on the quantum-well dots, and therefore to compete for NSF funding in the future.These properly-designed quantum-well and double-quantum-barrier dots have applications in efficient THz emission and detection.

PI和CO-PI建议设计，生长和表征量子阱点。他们建议通过分子束外延在阻挡层GaAs表面的顶部生长InP应力源来生长这种新颖的结构。InP应力源调制量子阱带隙与局部应变产生的限制电位。InP岛的形成是由于应变诱导的2D-3D转变，发生，因为GaAs势垒和InP层之间的晶格失配。他们将通过光致发光、激发光谱和时间分辨泵浦探测技术来表征结构。由于这是一个未经验证的新颖想法，SGER基金对他们获得量子阱点的初步结果是合适的，并且对他们未来竞争NSF基金至关重要。这些设计合理的量子阱和双量子势垒点在有效的THz发射和检测方面有应用。