SGER: Design, growth, and characterization of quantum-well dots

PI和CO-PI提出设计、生长和表征量子阱点。他们建议通过分子束外延在势垒GaAs表面的顶部生长InP应力源来生长这种新结构。InP应力源通过局域应变产生约束势来调制量子阱带隙。由于GaAs势垒和InP层之间的晶格不匹配，应变诱导的2D-3D转变导致了InP岛的形成。他们将通过光致发光，激发光谱和时间分辨泵浦探针技术表征结构。他们将根据他的实验结果对结构进行优化。由于这是一个未经测试的新颖想法，SGER的资助对他们获得量子阱点的初步结果是合适的，也是至关重要的，因此在未来竞争国家科学基金的资助。这些适当设计的量子阱和双量子势垒点在高效太赫兹发射和探测中具有应用价值。

PI and CO-PI propose to design, grow, and characterize quantum-well dots. They propose to grow this novel structure by growing InP stressors on the top of barrier GaAs surface by molecular-beam epitaxy. The InP stressors modulate the quantum-well band-gap with local strain generating confinement potential. InP islands are formed due to a strain-induced 2D-3D transition, taking place, because of lattice misfit between the GaAs barrier and InP layer. They will characterize the structure by photoluminescence, excitation spectum, and time-resolved pump-probe technique. They will optimize the structure following his experimental results.Since this is an untested and novel idea, a SGER grant is appropriate and crucial for them to obtain preliminary results on the quantum-well dots, and therefore to compete for NSF funding in the future.These properly-designed quantum-well and double-quantum-barrier dots have applications in efficient THz emission and detection.