Dynamics of the Reaction of Xenon Difluoride with Si(100)

二氟化氙与Si(100)反应动力学

• 批准号: 0091810
• 负责人: Sylvia Ceyer
• 金额: --
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-02-15 至 2004-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0091810&HistoricalAwards=false
• 关键词: Dynamics; Reaction; Xenon; Difluoride; Si

Professor Sylvia Ceyer and her colleagues at the Massachusetts Institute of Technology are investigating the detailed dynamics of the etching of silicon surfaces by XeF2 and F2 etchant molecules. With the support of the Analytical and Surface Chemistry Program, this group is testing the hypothesis that large local lattice vibrational excitations on collision with the silicon surface lead to the enhanced reactivity of XeF2 etchant molecules, as compared to F2 or F etchants. Comparisons of the molecular beam scattering of XeF2 and van der Waals bound Xe(F2) complexes are made, and the details of the energy transfer and reaction process are mapped out. These dynamic surface reactivity studies are designed to provide fundamental insights into the process of silicon etching. The effect of local lattice vibrational excitation on the reactivity of XeF2 for the etching of silicon is examined in this research project. The enhanced reactivity of XeF2 compared to F2 may be related to the lattice excitation that results on collision of the massive XeF2 species with the silicon surface. Direct comparison of the dynamics, using molecular beam scattering methods, allow Professor Ceyer and her group at MIT to probe this hypothesis.

马萨诸塞州理工学院的Sylvia Ceyer教授和她的同事正在研究XeF2和F2蚀刻剂分子对硅表面蚀刻的详细动力学。 在分析和表面化学计划的支持下，该小组正在测试一种假设，即与F2或F蚀刻剂相比，与硅表面碰撞时的大的局部晶格振动激发导致XeF2蚀刻剂分子的反应性增强。 比较了XeF_2和货车德瓦耳斯键合物（F_2）的分子束散射，揭示了能量传递和反应过程的细节。 这些动态表面反应性研究旨在提供硅蚀刻过程的基本见解。 本研究探讨了局域晶格振动激发对XeF2刻蚀硅反应活性的影响。 与F2相比，XeF2的增强的反应性可能与大量XeF2物质与硅表面碰撞时产生的晶格激发有关。 使用分子束散射方法直接比较动力学，使Ceyer教授和她在麻省理工学院的团队能够探索这一假设。