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An Investigation into the Fundamental Principles of Plasmaless Si Etching

An Investigation into the Fundamental Principles of Plasmaless Si Etching
非等离子硅刻蚀基本原理的研究
批准号:
0517786
负责人:
Sylvia Ceyer
金额:
$58.6万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2005
资助国家:
美国
项目状态:
已结题
起止时间:
2005-09-01 至 2009-08-31

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中文摘要
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英文摘要
In this project, funded by the Experimental Physical Chemistry Program of the Chemistry Division, Prof. Sylvia T. Ceyer of the Massachusetts Institute of Technology and her postdoctoral and graduate student researchers will investigate the plasmaless etching of Si with a variety of fluorine containing molecules using a combination of molecular beam and surface science methods. The ultimate goal of this research is to learn more about the underlying chemical principles behind plasmaless etching. Results from this research may result in improved technology in the semiconductor industry.In addition to the broader technological impact of the proposed research, the young researchers working on this project will gain expertise in a number of sophisticated research methods, which will allow them to pursue careers in either industry or academia. Prof. Ceyer will incorporate results from her research into workshops for teachers of high school chemistry and into presentations for undergraduates at primarily undergraduate institutions.
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Exploration of Non-Equilibrium Interfacial Phenomena in Spin Forbidden Oxidation
Dynamics of the Reaction of Xenon Difluoride with Si(100)
The Roles of Lattice Vibrational Excitation and Product Electronic Excitation in Dissociative Chemisorption on Covalent Solids
Collision Induced Surface Processes
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