CAREER: Engineered Substrates of Semiconductor Alloys: A Fundamentally-Based Novel Approach

职业：半导体合金工程基底：一种基于基础的新颖方法

• 批准号: 0093706
• 负责人: Partha Dutta
• 金额: $ 37.5万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-02-01 至 2006-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0093706&HistoricalAwards=false
• 关键词: CAREER; Engineered; Substrates; Semiconductor; Alloys

The research aspect of this CAREER proposal focuses on a novel andfundamental approach for fabricating and engineering tunable band gap and latticeconstant multi-component semiconductor substrates for optoelectronic, photonic, highspeed electronic, spintronic, micro-electro-mechanical systems and photovoltaicapplications. The proposed substrate engineering technology is based upon severaladvanced concepts recently developed in the areas of ternary and quaternary bulk crystalgrowth from melts, thermodynamic modeling of multi-component alloys, and interfacialdefect generation by the principal investigator. As a part of this career award, a newSubstrate Engineering Reactor will be designed and installed for compatible multi-componentsubstrate growth and hetero-epitaxy. Multi-component engineered substratesof III-V compounds and related device structures will be fabricated by employing thenew fundamental approach.The integration of the proposed research with undergraduate and graduateeducation at Rensselaer Polytechnic Institute will include: (a) development of newintroductory level interdisciplinary course for undergraduates in the area of compoundsemiconductor materials and device structures with specific focus towardsmicroelectronics, optoelectronics, and spintronics, (b) development of a graduate levelcourse on emerging materials and high performance device technologies, (c) researchopportunities for at least two doctoral students and several undergraduate and master'sstudents in the areas of substrate engineering and device fabrication on multi-componentalloys with specific focus towards new device architectures. The introduction of theabove topics into the undergraduate and graduate curriculum is in synergy withRensselaer's educational plans and will enable and enhance student's exposure to rapidlygrowing modern and future semiconductor technologies.

本CAREER提案的研究重点是为光电、光子、高速电子、自旋电子、微机电系统和光伏应用提供一种新的和基本的方法，用于制造和设计可调谐带隙和晶格常数多组分半导体衬底。提出的衬底工程技术是基于最近在熔体中三元和四元体晶体生长、多组分合金的热力学建模和界面缺陷产生等领域发展起来的几个先进概念。作为该职业奖项的一部分，将设计和安装一个新的衬底工程反应器，用于兼容多组件衬底生长和异质外延。III-V化合物的多组分工程基板和相关器件结构将采用新的基本方法制备。拟议的研究与伦斯勒理工学院的本科和研究生教育的整合将包括：(a)为化合物半导体材料和器件结构领域的本科生开发新的入门级跨学科课程，特别关注微电子学，光电子学和自旋电子学；(b)开发新兴材料和高性能器件技术的研究生课程；(c)为至少两名博士生和几名本科生和硕士生提供研究机会，研究方向为衬底工程和多组分合金器件制造，特别关注新器件架构。在本科和研究生课程中引入上述主题与伦斯勒的教育计划相辅相成，将使学生接触到快速发展的现代和未来半导体技术。