SBIR Phase I: Focused Beam Total Reflection X-Ray Fluorescence Analysis Using Doubly-Curved Crystals

SBIR 第一阶段：使用双曲晶体的聚焦光束全反射 X 射线荧光分析

• 批准号: 0109351
• 负责人: Zewu Chen
• 金额: $ 9.43万
• 依托单位: X-RAY OPTICAL SYSTEMS, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-07-01 至 2001-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0109351&HistoricalAwards=false
• 关键词: SBIR; Phase; Focused; Beam; Total

This Small Business Innovation Research (SBIR) Phase I project will address improved wafer contamination analysis in the microelectronics industry. Phase I will examine a new technique called focused beam total reflection x-ray fluorescence (TXRF). Based on point-focusing toroidal crystal optics, focused beam TXRF is expected to improve spatial resolution by a factor more than 100 and provide 30 times better detection sensitivity for local contaminants on silicon (Si) than the conventional TXRF method. This technique also has potential for low level aluminum (Al), sodium (Na), and other low atomic-number (Z) elements that not performed effectively by conventional TXRF and other techniques. Phase I will demonstrate improved sensitivity and resolution for transition metal detection. Theoretical calculations will be also carried out to determine the feasibility for Al and Na detection in wafer contamination control.Focused beam TXRF analysis has commercial applications in the microelectronics industry for wafer contamination control, including localized and homogeneous contaminants with high resolution. These contaminants include many important elements, such as transition metals, Al, Na and other low Z elements.

这个小企业创新研究（SBIR）第一阶段项目将解决微电子工业中晶圆污染分析的改进问题。第一阶段将研究一种称为聚焦束全反射x射线荧光（TXRF）的新技术。基于点聚焦环形晶体光学，聚焦束TXRF有望将空间分辨率提高100倍以上，对硅（Si）上局部污染物的检测灵敏度比传统TXRF方法提高30倍。该技术还具有处理低含量铝（Al）、钠（Na）和其他低原子序数(Z)元素的潜力，而传统的TXRF和其他技术无法有效地处理这些元素。第一阶段将演示过渡金属探测的灵敏度和分辨率的提高。还将进行理论计算，以确定在晶圆污染控制中检测Al和Na的可行性。聚焦束TXRF分析在微电子工业中具有商业应用，用于晶圆污染控制，包括高分辨率的局部和均匀污染物。这些污染物包括许多重要元素，如过渡金属、Al、Na和其他低Z元素。