Interfacial structure/chemistry of spintronics devices with Heusler alloy electrodes

具有 Heusler 合金电极的自旋电子器件的界面结构/化学

• 批准号: 151082910
• 负责人: Professor Dr. Andreas Hütten
• 金额: --
• 依托单位: Research Center for Magnetic and Spintronic Materials (CMSM)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2009
• 资助国家: 德国
• 起止时间: 2008-12-31 至 2013-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/151082910?language=en
• 关键词: Interfacial; structure; chemistry; spintronics; devices

Discovering the structure/chemistry property relationship of interfaces in spintronic devices comprising half metal Heusler alloys as electrodes. Beside the interface between Heusler alloys and oxide barriers used in tunneling magnetoresistance (TMR) devices, special attention will be paid to Heusler alloys in contact to metallic spacer materials and semi-conductors in order to open up new applications in current-perpendicularrto-plane giant magnetoresistance (CPP-GMR) and spin-injectors. Functional TMR and GMR layer structures are produced by sputter deposition and molecular beam epitaxy. Selected materials of barriers and spacer layers and the composition of the Heusler alloys will be varied to determine the effect on interfacial structure, order and local chemistry of the respective interfaces. To clarify the effect of interface segregation, the local composition of interfaces will be directly modified by controlled dusting in molecular beam epitaxy. These prepared structures will be electrically and magnetically characterized after suitable heat treatment. To detect smallest variations of interfacial composition, state-of-the-art laser-assisted atom probe tomography will be applied. High resolution and analytical TEM will be used to characterize ordering state and morphology of the intermetallic Heusler alloys.

发现以半金属Heusler合金为电极的自旋电子器件中界面的结构与化学性质的关系。除了用于隧道磁电阻（TMR）器件的Heusler合金和氧化物势垒之间的界面外，将特别关注与金属间隔材料和半导体接触的Heusler合金，以便在电流-平面巨磁电阻（CPP-GMR）和自旋注入器中开辟新的应用。功能性TMR和GMR层结构通过溅射沉积和分子束外延产生。选择的阻挡层和间隔层的材料以及Heusler合金的组成将被改变，以确定对界面结构、顺序和相应界面的局部化学的影响。为了阐明界面偏析的影响，在分子束外延中通过受控除尘直接修改界面的局部组成。这些制备的结构将在适当的热处理后进行电学和磁学表征。为了检测界面组成的最小变化，将应用最先进的激光辅助原子探针层析成像。高分辨率分析型透射电镜将用于表征金属间化合物Heusler合金的有序状态和形貌。

项目成果

Nano-analysis of Ta/FeCoB/MgO tunnel magneto resistance structures

• DOI: 10.1016/j.actamat.2016.06.045
• 发表时间: 2016-09-01
• 期刊: ACTA MATERIALIA
• 影响因子: 9.4
• 作者: Bouchikhaoui, H.;Stender, P.;Schmitz, G.
• 通讯作者: Schmitz, G.

Co2FeAl based magnetic tunnel junctions with BaO and MgO/BaO barriers

• DOI: 10.1063/1.4927638
• 发表时间: 2015-07
• 期刊: AIP Advances
• 影响因子: 1.6
• 作者: J. Rogge;W. Hetaba;J. Schmalhorst;H. Bouchikhaoui;P. Stender;D. Baither;G. Schmitz;A. Hütten