U.S.-Korea Cooperative Research: Study of the Interaction Between Slurry Particles and Wafer Surfaces for Post-Chemical Mechanical Polishing Processes

美韩合作研究：化学后机械抛光工艺中浆料颗粒与晶圆表面相互作用的研究

• 批准号: 0140529
• 负责人: Ahmed Busnaina
• 金额: $ 2.43万
• 依托单位: Northeastern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-03-01 至 2005-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0140529&HistoricalAwards=false
• 关键词: U.S.; Korea; Cooperative; Research; Study

0140529Busnaina Particulate contamination of silicon wafers after chemical mechanical polishing processes is a major problem that affects yield in semiconductor manufacturing. The removal and adhesion forces of slurry particles are greatly affected by the polishing, cleaning, rinsing and drying processes that follow the particle initial contact with the surface. In this proposed international collaboration between Hanyang University and Northeastern University, the interaction between slurry particles and wafer surfaces will be investigated by electrical characterization of the particles and wafer substrates and by measuring the removal and the adhesion forces of these particles. The goal of the project is to understand particle adhesion and removal mechanisms for submicron particles. Hydrodynamic removal forces and the effect of the zeta potential on slurry particle adhesion and removal will be investigated. The study will also determine the effectiveness of the cleaning techniques for each particle/film systems.

0140529 Busnaina化学机械抛光工艺后硅晶片的颗粒污染是影响半导体制造产量的主要问题。浆料颗粒的去除力和粘附力受颗粒与表面初始接触之后的抛光、清洁、冲洗和干燥过程的极大影响。在汉阳大学和东北大学之间拟议的国际合作中，浆料颗粒和晶片表面之间的相互作用将通过颗粒和晶片衬底的电气特性以及测量这些颗粒的去除和粘附力来研究。该项目的目标是了解亚微米颗粒的颗粒粘附和去除机制。将研究流体动力学去除力和zeta电位对浆料颗粒粘附和去除的影响。该研究还将确定每种颗粒/膜系统的清洁技术的有效性。