U.S.-Czech Republic Materials Research on Novel Magnetic Semiconductors Based on Antimony Telluride [Sb2Te3]
美国-捷克共和国基于碲化锑[Sb2Te3]的新型磁性半导体材料研究
基本信息
- 批准号:0201114
- 负责人:
- 金额:$ 6.94万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2002
- 资助国家:美国
- 起止时间:2002-06-15 至 2007-05-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This U.S.-Czech materials research project involving Ctirad Uher of the University of Michigan and his Czech partner, Petr Lostak at the University of Pardubice, will build upon their recently reported observation of long-range ferromagnetism in a class of ansiotropic semiconductors based on antimony telluride [Sb2Te3], doped with a minute amount of vanadium. They now plan to study the effect of transition metal ions incorporated in the crystal lattice of Sb2Te3 single crystals with the goal of identifying dopants that enhance the Curie temperature beyond the vanadium-doped value (~25K). Specifically, the researchers will examine the role of chromium, manganese, iron, nickel and cobalt. The collaborative effort benefits from the Michigan group's expertise in transport and magnetic properties of tetradymite-type structure semiconductors and the Czech partners' strengths in growth of single crystals and characterization of these materials. Results in this area of diluted magnetic semiconductors may lead to applications in information technology given the promising dual features of charge carrier transport and spin manipulation in thin films. This collaborative project in condensed matter physics fulfills the program objective of advancing scientific knowledge by enabling experts in the United States and Central Europe to combine complementary talents and share research resources in areas of strong mutual interest and competence.
This U.S.-Czech materials research project involving Ctirad Uher of the University of Michigan and his Czech partner, Petr Lostak at the University of Pardubice, will build upon their recently reported observation of long-range ferromagnetism in a class of ansiotropic semiconductors based on antimony telluride [Sb2Te3], doped with a minute amount of vanadium. 他们现在计划研究掺入SB2TE3单晶晶体晶格中的过渡金属离子的作用,其目的是鉴定掺杂剂,从而增强了咖喱温度超出钒掺杂值(〜25K)。 具体而言,研究人员将研究铬,锰,铁,镍和钴的作用。 协作努力受益于密歇根集团在四酰胺型结构半导体的运输和磁性特性方面的专业知识以及捷克伙伴在单晶生长和这些材料表征方面的优势。 鉴于电荷载体传输的有前途的双重特征和薄膜中的旋转操作的有前途的双重特征,在稀释的磁性半导体区域中的结果可能导致信息技术的应用。 这个凝结物理学的合作项目实现了通过使美国和中欧的专家能够结合互补才能并在浓厚的共同兴趣和能力领域中共享研究资源来促进科学知识的计划目标。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Ctirad Uher其他文献
Rapid fabrication and thermoelectric performance of SnTe via non-equilibrium laser 3D printing
通过非平衡激光 3D 打印快速制造 SnTe 并提高热电性能
- DOI:
10.1007/s12598-018-1019-9 - 发表时间:
2018-04 - 期刊:
- 影响因子:8.8
- 作者:
Tian-Le Chen;Chuang Luo;Yong-Gao Yan;Ji-Hui Yang;Qing-Jie Zhang;Ctirad Uher;Xin-Feng Tang - 通讯作者:
Xin-Feng Tang
Finite element analysis of temperature and stress fields during the selective laser melting process of thermoelectric SnTe
热电 SnTe 激光选区熔化过程温度场和应力场的有限元分析
- DOI:
10.1016/j.jmatprotec.2018.06.001 - 发表时间:
2018-11 - 期刊:
- 影响因子:6.3
- 作者:
Chuang Luo;Junhao Qiu;Yonggao Yan;Jihui Yang;Ctirad Uher;Xinfeng Tang - 通讯作者:
Xinfeng Tang
Fabrication and thermoelectric properties of n-type CoSb2.85Te0.15 using selective laser melting
选区激光熔化n型CoSb2.85Te0.15的制备及其热电性能
- DOI:
10.1021/acsami.8b01564 - 发表时间:
2018 - 期刊:
- 影响因子:9.5
- 作者:
Yonggao Yan;Hongquan Ke;Jihui Yang;Ctirad Uher;Xinfeng Tang - 通讯作者:
Xinfeng Tang
Improved thermoelectric performance of α- and β- Cu<sub>2</sub>Se through suppression of hole density using extrinsic copper vacancies
- DOI:
10.1016/j.cej.2024.157558 - 发表时间:
2024-12-01 - 期刊:
- 影响因子:
- 作者:
Zhixiong Yin;Ruiming Lu;Trevor P. Bailey;Tao Ma;Ctirad Uher;Pierre F.P. Poudeu - 通讯作者:
Pierre F.P. Poudeu
Defect structure of Sb<sub>2−</sub><em><sub>x</sub></em>Mn<em><sub>x</sub></em>Te<sub>3</sub> single crystals
- DOI:
10.1016/j.jssc.2005.06.026 - 发表时间:
2005-09-01 - 期刊:
- 影响因子:
- 作者:
Jaromír Horák;Petr Lošt’ák;Čestmír Drašar;Jeffrey S. Dyck;Zengzua Zhou;Ctirad Uher - 通讯作者:
Ctirad Uher
Ctirad Uher的其他文献
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{{ truncateString('Ctirad Uher', 18)}}的其他基金
Transition Metal and Rare Earth Doped Sb2Te3 and Bi2Te3 Diluted Magnetic Semiconductors
过渡金属和稀土掺杂 Sb2Te3 和 Bi2Te3 稀磁半导体
- 批准号:
0604549 - 财政年份:2006
- 资助金额:
$ 6.94万 - 项目类别:
Standard Grant
Thin Film Diluted Magnetic Semiconductors with Tetradymite Structure
具有辉辉石结构的薄膜稀磁半导体
- 批准号:
0305221 - 财政年份:2003
- 资助金额:
$ 6.94万 - 项目类别:
Continuing Grant
Studies of MBE-grown Incommensurate Heterostructures Based on Metals and Semiconductors
基于金属和半导体的 MBE 生长的不相称异质结构的研究
- 批准号:
8905367 - 财政年份:1989
- 资助金额:
$ 6.94万 - 项目类别:
Standard Grant
Molecular Beam Epitaxy (MBE)-Grown Incommensurate Heterostructures (Materials Research)
分子束外延 (MBE) 生长的不相称异质结构(材料研究)
- 批准号:
8602675 - 财政年份:1986
- 资助金额:
$ 6.94万 - 项目类别:
Continuing Grant
Low Temperature Properties of Artificial Metallic Super- lattices and Thin Films (Materials Research)
人造金属超晶格和薄膜的低温性能(材料研究)
- 批准号:
8508392 - 财政年份:1985
- 资助金额:
$ 6.94万 - 项目类别:
Continuing Grant
Low Temperature Transport Properties and Superconductivity in Semimetals (Materials Research)
半金属的低温输运特性和超导性(材料研究)
- 批准号:
8304356 - 财政年份:1983
- 资助金额:
$ 6.94万 - 项目类别:
Continuing Grant
Superconductivity in Low Carrier Density Group V Semimetals
低载流子密度 V 族半金属的超导性
- 批准号:
7924374 - 财政年份:1980
- 资助金额:
$ 6.94万 - 项目类别:
Continuing Grant
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