Low Temperature Properties of Artificial Metallic Super- lattices and Thin Films (Materials Research)
人造金属超晶格和薄膜的低温性能(材料研究)
基本信息
- 批准号:8508392
- 负责人:
- 金额:$ 22.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:1985
- 资助国家:美国
- 起止时间:1985-07-15 至 1988-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Ctirad Uher其他文献
Current induced electromechanical strain in thin antipolar Ag2Se semiconductor
薄反极性 Ag2Se 半导体中电流感应的机电应变
- DOI:
10.1038/s41467-025-57057-5 - 发表时间:
2025-02-20 - 期刊:
- 影响因子:15.700
- 作者:
Hao Luo;Qi Liang;Anan Guo;Yimeng Yu;Haoyang Peng;Xiaoyi Gao;Yihao Hu;Xianli Su;Ctirad Uher;Yu Zheng;Dongwang Yang;Xiaolin Wang;Qingjie Zhang;Xinfeng Tang;Shi Liu;Gustaaf Van Tendeloo;Shujun Zhang;Jinsong Wu - 通讯作者:
Jinsong Wu
Extremely large magnetoresistance and quantum oscillations in semimetal Nisub3/subInsub2/subSsub2/sub
半学NISUB3/subInsub2/subssub2/sub的极大磁化值和量子振荡
- DOI:
10.1016/j.mtphys.2023.101318 - 发表时间:
2024-01-01 - 期刊:
- 影响因子:9.700
- 作者:
Yinying Zhang;Zhongrui Li;Kuan-Wen Chen;Lu Li;Ctirad Uher - 通讯作者:
Ctirad Uher
Magnetic and transport properties of Fe-doped Weyl semimetal Cosub3/subSnsub2/subSsub2/sub
- DOI:
10.1016/j.jallcom.2022.165089 - 发表时间:
2022-08-05 - 期刊:
- 影响因子:6.300
- 作者:
Yinying Zhang;Ctirad Uher - 通讯作者:
Ctirad Uher
Finite element analysis of temperature and stress fields during the selective laser melting process of thermoelectric SnTe
热电 SnTe 激光选区熔化过程温度场和应力场的有限元分析
- DOI:
10.1016/j.jmatprotec.2018.06.001 - 发表时间:
2018-11 - 期刊:
- 影响因子:6.3
- 作者:
Chuang Luo;Junhao Qiu;Yonggao Yan;Jihui Yang;Ctirad Uher;Xinfeng Tang - 通讯作者:
Xinfeng Tang
Fabrication and thermoelectric properties of n-type CoSb2.85Te0.15 using selective laser melting
选区激光熔化n型CoSb2.85Te0.15的制备及其热电性能
- DOI:
10.1021/acsami.8b01564 - 发表时间:
2018 - 期刊:
- 影响因子:9.5
- 作者:
Yonggao Yan;Hongquan Ke;Jihui Yang;Ctirad Uher;Xinfeng Tang - 通讯作者:
Xinfeng Tang
Ctirad Uher的其他文献
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{{ truncateString('Ctirad Uher', 18)}}的其他基金
Transition Metal and Rare Earth Doped Sb2Te3 and Bi2Te3 Diluted Magnetic Semiconductors
过渡金属和稀土掺杂 Sb2Te3 和 Bi2Te3 稀磁半导体
- 批准号:
0604549 - 财政年份:2006
- 资助金额:
$ 22.5万 - 项目类别:
Standard Grant
Thin Film Diluted Magnetic Semiconductors with Tetradymite Structure
具有辉辉石结构的薄膜稀磁半导体
- 批准号:
0305221 - 财政年份:2003
- 资助金额:
$ 22.5万 - 项目类别:
Continuing Grant
U.S.-Czech Republic Materials Research on Novel Magnetic Semiconductors Based on Antimony Telluride [Sb2Te3]
美国-捷克共和国基于碲化锑[Sb2Te3]的新型磁性半导体材料研究
- 批准号:
0201114 - 财政年份:2002
- 资助金额:
$ 22.5万 - 项目类别:
Standard Grant
Studies of MBE-grown Incommensurate Heterostructures Based on Metals and Semiconductors
基于金属和半导体的 MBE 生长的不相称异质结构的研究
- 批准号:
8905367 - 财政年份:1989
- 资助金额:
$ 22.5万 - 项目类别:
Standard Grant
Molecular Beam Epitaxy (MBE)-Grown Incommensurate Heterostructures (Materials Research)
分子束外延 (MBE) 生长的不相称异质结构(材料研究)
- 批准号:
8602675 - 财政年份:1986
- 资助金额:
$ 22.5万 - 项目类别:
Continuing Grant
Low Temperature Transport Properties and Superconductivity in Semimetals (Materials Research)
半金属的低温输运特性和超导性(材料研究)
- 批准号:
8304356 - 财政年份:1983
- 资助金额:
$ 22.5万 - 项目类别:
Continuing Grant
Superconductivity in Low Carrier Density Group V Semimetals
低载流子密度 V 族半金属的超导性
- 批准号:
7924374 - 财政年份:1980
- 资助金额:
$ 22.5万 - 项目类别:
Continuing Grant
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200℃以下退火显着改善低温沉积二氧化硅薄膜的电性能
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