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GOALI: Modeling the Industrial Growth of CdZnTe Substrate Crystals

GOALI: Modeling the Industrial Growth of CdZnTe Substrate Crystals
目标:模拟 CdZnTe 衬底晶体的工业生长
批准号:
0201486
负责人:
Jeffrey Derby
金额:
$43.83万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-07-01 至 2006-06-30

项目摘要

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中文摘要
翻译
摘要提案号:CTS-0201486首席研究员:Jeffrey J. Derby, Podromos Daoutidis, Csaba szeles机构:明尼苏达大学CdZnTe衬底晶体的工业生长建模该提案是明尼苏达大学和eV产品研究人员之间的合作项目,旨在开发,验证和应用碲化镉锌(CZT)垂直布里奇曼生长的新理论模型,CZT是一种在红外和核探测器应用中重要的半导体材料。具体任务包括垂直Bridgman增长的模型开发,坩埚旋转技术可能期望的过程改进评估,以及基于模型的控制策略的应用,用于熔体-晶体界面形状和抑制流动不稳定性和成分不均匀性。该研究项目将把eV产品公司的实验和工艺开发专业知识与明尼苏达大学的理论计算能力和先进控制算法开发相结合。如果成功,结果可能会导致更好的工艺操作和设计广泛的晶体生长系统,以更高的生产率和更低的成本产生更高质量的晶体。
英文摘要
ABSTRACTProposal Number: CTS-0201486 Principal Investigator: Jeffrey J. Derby, Podromos Daoutidis, and Csaba SzelesInstitution: University of MinnesotaProposal Title: GOALI: Modeling the Industrial Growth of CdZnTe Substrate CrystalsThe proposal is for a cooperative program between investigators at the University of Minnesota and eV Products to develop, validate, and apply new theoretical models for vertical Bridgman growth of cadmium zinc telluride (CZT), a semi-conductor material important in infrared and nuclear detector applications. Specific tasks include model development for vertical Bridgman growth, assessment of process improvements that may be expected from crucible rotation techniques, and the application of model based control strategies for melt-crystal interface shape and for suppression of flow instabilities and compositional inhomogeneities. The research program will combine experimental and process development expertise at eV Products with the theoretical computational capability and advanced control algorithm development at the University of Minnesota. If successful, the results could lead to better process operation and design for a broad spectrum of crystal growth systems, yielding better quality crystals at higher production rates and lower costs.
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GOALI: Manufacturing Large, Diamond Single Crystals via High-Pressure, High-Temperature Growth
  • 批准号:
    2308877
  • 项目类别:
    Standard Grant
  • 资助金额:
    $44.28万
  • 财政年份:
    2023
  • 负责人:
    Jeffrey Derby
  • 依托单位:
GOALI: Toward Improving Quality and Yield of Large-Area, Single-Crystal Sapphire Wafers via Fundamental Understanding of Bubble Engulfment During Growth
  • 批准号:
    1760689
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.31万
  • 财政年份:
    2018
  • 负责人:
    Jeffrey Derby
  • 依托单位:
Workshop: Ninth International Workshop on Modeling in Crystal Growth (IWMCG-9); Kailua-Kona, Hawaii; 21-24 October 2018
  • 批准号:
    1853512
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.0万
  • 财政年份:
    2018
  • 负责人:
    Jeffrey Derby
  • 依托单位:
Toward viable horizontal ribbon growth of solar silicon: Understanding and ameliorating process instabilities
  • 批准号:
    1336164
  • 项目类别:
    Standard Grant
  • 资助金额:
    $31.86万
  • 财政年份:
    2013
  • 负责人:
    Jeffrey Derby
  • 依托单位:
国内基金
海外基金
Galaxy Analytical Modeling Evolution (GAME) and cosmological hydrodynamic simulations.
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    10.0万元
  • 批准年份:
    2025
  • 负责人:
    Antonios Katsianis
  • 依托单位: