Sixth International Workshop on Modeling in Crystal Growth (IWMCG-6) to be held in Lake Geneva, WI, August 9-13, 2009
Sixth International Workshop on Modeling in Crystal Growth (IWMCG-6) to be held in Lake Geneva, WI, August 9-13, 2009
批准号:
0939445
负责人:
Jeffrey Derby
金额:
$1.5万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-07-01 至 2010-06-30
中文摘要
0939445德比第六届晶体生长建模国际研讨会(IWMCG-6)将于2009年8月9日至13日在威斯康星州的日内瓦湖举行。这次研讨会将汇集来自美国、欧洲、亚洲和世界其他地区的学术界和产业界的顶尖资深和有前途的初级研究人员,以确定共同的优先事项,允许交流新想法,并促进未来的合作。寻求国家科学基金会的支持,以促进学术研究人员,特别是年轻研究人员(研究生、博士后研究员和年轻教员)的出席。学术界的参与对于履行这次讲习班的使命至关重要,更重要的是,这将使这些研究人员能够通过国际接触和未来的合作来推进他们的工作。晶体生长建模国际研讨会的独特之处在于,它们融合了数学分析、数值算法和物理应用,并专注于最先进的技术。由于在晶体生长模型中表示多个尺度的极端挑战,非常需要对算法和数值方法进行广泛的讨论。IWMCG提供了一个论坛,不仅包含对物理的深入讨论,还提供在平等的平面上解释建模方法的演示,从数学公式到数值算法再到软件实现。在这方面,更多的一般性会议不能满足晶体生长模型界的需求。虽然建模的结果通常在这些更广泛的会议上受到欢迎,但对建模细节的更广泛讨论并不受欢迎。拟议活动的智力优点:除了促进这一领域研究人员之间的国际讨论和合作外,这次研讨会还将促进一个重要和及时的研究主题。晶体生长领域具有丰富的科学和工程内容,具有重要的技术和经济意义,因为美国和全球的电子工业实际上都是在单晶材料上制造的。对这些材料的生长进行建模,目的是为决定材料质量的生长过程中的物理机制提供必要的洞察力,并为经济过程优化提供工具。晶体生长也是一个需要加强的具有战略重要性的领域。事实上,美国国家研究委员会已经完成了MSAC的研究,该研究将于2009年6月发布,该研究断言,由于缺乏对晶体生长的联邦支持,美国已经失去了几个关键的材料合成能力。一个致力于了解和推进晶体生长领域的讲习班将提供一个重要手段,以继续在社区内交流思想,并吸引新来者进入该领域。拟议活动产生的更广泛的影响。IWMCG将首次与北美最大的晶体生长会议ACCGE-17/OMVPE 14同时举行,让研讨会与会者了解外延薄膜和块状晶体生长的所有方面的最新进展。ACCGE、OMVPE和IWMCG的联合会议将把来自行业、政府和学术界的研究人员聚集在一个与世隔绝的非正式环境中,有充足的时间进行讨论和互动。他们将努力实现性别平衡,并将向来自被确认的代表性不足群体的个人提供优先支助。他们坚定地致力于《美国残疾人法》,并确保所有会议活动都可以坐在轮椅上进入。除了这些标准之外,他们将试图提供尽可能先进的技术会议,与会者包括来自学术研究、工业和教育专业的人员,也包括高级和初级调查人员、博士后实习生和研究生。
英文摘要
0939445DerbyThe Sixth International Workshop on Modeling in Crystal Growth (IWMCG-6) is to be held in Lake Geneva, WI, August 9-13, 2009. This Workshop will bring together top senior and promising junior researchers of both academe and industry from the United States, Europe, Asia, and other parts of the world to identify common priorities, allow the exchange of new ideas, and foster future collaborative work. NSF support is sought to promote the attendance of academic researchers, especially young investigators (graduate students, post-doctoral fellows and young faculty). The participation of the academic community is vital for carrying out the mission of this workshop and, more importantly, will enable these researchers to advance their work through international exposure and future collaboration. The International Workshops on Modeling in Crystal Growth are unique in their blending of mathematical analysis, numerical algorithms, and physical applications and their focus on state of the art techniques. Because of the extreme challenges in representing multiple scales in crystal growth modeling, there is a great need for extensive discussions of algorithms and numerical methods. The IWMCG provides a forum that embraces not only in depth discussions of physics but also presentations explaining modeling methods, from mathematical formulation to numerical algorithms to software implementations, on an equal plane. In this regard, more general meetings do not meet the needs of the crystal growth modeling community. While results from modeling are often well received at these more general meetings, more extensive discussions of the details of modeling are not.Intellectual merit of the proposed activity: In addition to promoting international discourse and collaboration among researchers in this area, this workshop will promote an important and timely research topic. The area of crystal growth is rich in scientific and engineering content and is technologically and economically important, since the U.S. and global electronics industries are literally fabricated upon single-crystalline materials. Modeling the growth of these materials aims to provide needed insight to the physical mechanisms during growth which determine materials quality as well as providing a tool for economic process optimization. Crystal growth is also an area of strategic importance that is in need of strengthening. Indeed, the National Research Council has completed the MSAC study, to be released in June 2009, that asserts that the U.S. has lost several critical competencies in the synthesis of materials due to a lack of federal support for crystal growth. A workshop dedicated to understanding and advancing the field of crystal growth will provide an important means to continue the exchange of ideas in the community and attract newcomers to the area. Broader impacts resulting from the proposed activity. For the first time, the IWMCG will be held in conjunction with the largest North American crystal growth conference, ACCGE-17/OMVPE 14, allowing workshop attendees to discover the latest advances in all aspects of epitaxial thin film and bulk crystal growth. The joint ACCGE, OMVPE, and IWMCG conferences will bring together researchers from industry, government and academia in an informal setting that is isolated from outside distractions, with ample time for discussion and interaction. They will strive for gender balance and will provide priority support to individuals from under-represented groups that are identified. They are firmly committed to the Americans with Disabilities Act and have ensured that all conference activities are wheelchair accessible. Beyond these criteria, they will attempt to provide the most advanced technical meeting possible, with a mixture of attendees from academic research, industry and educational professions, and also with a mixture of senior and junior investigators, post-doctoral trainees and graduate students.
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会议论文
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批准号:2308877
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Workshop: Ninth International Workshop on Modeling in Crystal Growth (IWMCG-9); Kailua-Kona, Hawaii; 21-24 October 2018
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批准号:1853512
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财政年份:2018
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Toward viable horizontal ribbon growth of solar silicon: Understanding and ameliorating process instabilities
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批准号:1336164
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项目类别:Standard Grant
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资助金额:$31.86万
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财政年份:2013
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负责人:Jeffrey Derby
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依托单位:
Collaborative Research: ARI-MA Development of Improved CMT and CZT Nuclear Detectors for Homeland Security Applications
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批准号:1140001
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项目类别:Standard Grant
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资助金额:$12.0万
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财政年份:2011
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负责人:Jeffrey Derby
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依托单位:
Materials World Network: Detached Bridgman Growth of Semiconductor Crystals
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批准号:1007885
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项目类别:Continuing Grant
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资助金额:$42.0万
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财政年份:2010
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负责人:Jeffrey Derby
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依托单位:
GOALI: Thermal-Capillary Analysis of the Horizontal Ribbon Growth of Solar Silicon via Finite-Element Process Models
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批准号:0755030
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项目类别:Standard Grant
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资助金额:$30.71万
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财政年份:2008
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负责人:Jeffrey Derby
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依托单位:
Employing Convective Assembly for Micro-/Nano-Fabrication of Colloidal Crystals
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批准号:0726958
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项目类别:Standard Grant
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资助金额:$35.0万
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财政年份:2007
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负责人:Jeffrey Derby
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依托单位:
Growth of crystalline ZnO nanowires from solution: From theory to application
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批准号:0729924
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项目类别:Standard Grant
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资助金额:$17.71万
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财政年份:2007
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负责人:Jeffrey Derby
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依托单位:
ACT/SGER: Evaluation of a Novel Approach for Improved Growth of CdZnTe
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批准号:0345183
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项目类别:Standard Grant
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资助金额:$9.93万
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财政年份:2003
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负责人:Jeffrey Derby
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依托单位:
GOALI: Modeling the Industrial Growth of CdZnTe Substrate Crystals
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批准号:0201486
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项目类别:Standard Grant
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资助金额:$43.83万
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财政年份:2002
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负责人:Jeffrey Derby
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依托单位:
Modeling the Growth of Crystals from Solution: Nonlinear Interactions of Kinetics and Transport
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批准号:0121467
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项目类别:Continuing Grant
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资助金额:$27.7万
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财政年份:2001
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负责人:Jeffrey Derby
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依托单位:
Modeling The Growth Of Crystals From Solution Via High Performance Computing
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批准号:9713044
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项目类别:Continuing Grant
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资助金额:$24.64万
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财政年份:1997
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负责人:Jeffrey Derby
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依托单位:
U.S.-European Workshop: Modelling in Crystal Growth, Durbuy, Belgium, October 1996
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批准号:9601049
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项目类别:Standard Grant
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资助金额:$2.14万
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财政年份:1996
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负责人:Jeffrey Derby
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依托单位:
Modeling Solution Crystal Growth Processes: Toward Three- Dimensional, Transient Simulations on Massively Parallel Supercomputers
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批准号:9218842
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项目类别:Continuing Grant
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资助金额:$14.65万
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财政年份:1993
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负责人:Jeffrey Derby
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依托单位:
Small Grants for Exploratory Research: Feasibility and Design of a Novel Sheet Growth Method for Single-Crystal Growth.
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批准号:9315980
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项目类别:Standard Grant
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资助金额:$2.5万
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财政年份:1993
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负责人:Jeffrey Derby
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依托单位:
Research Initiation Award: Reaction, Transport, and Geometry in Electrochemical Micromachining: A Moving- Boundary Analysis Via the Finite Element Method
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批准号:9009924
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项目类别:Standard Grant
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资助金额:$7.0万
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财政年份:1990
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负责人:Jeffrey Derby
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依托单位:
Presidential Young Investigator Award
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批准号:9058386
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项目类别:Continuing Grant
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资助金额:$31.25万
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财政年份:1990
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负责人:Jeffrey Derby
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依托单位:
海外基金