GOALI: Thermal-Capillary Analysis of the Horizontal Ribbon Growth of Solar Silicon via Finite-Element Process Models
GOALI: Thermal-Capillary Analysis of the Horizontal Ribbon Growth of Solar Silicon via Finite-Element Process Models
批准号:
0755030
负责人:
Jeffrey Derby
金额:
$30.71万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-05-01 至 2013-04-30
中文摘要
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英文摘要
CBET-0755030Derby Solar-grade, crystalline silicon is produced by a variety of techniques which melt and carefully re-solidify silicon via thermal transport processes. These processes typically involve an interesting trade-off: Methods that grow single crystals of silicon are expensive, but such material achieves the highest cell efficiencies. Lower-cost growth methods typically produce multi-crystalline material that results in cells of lower efficiency. A promising technology to grow single crystals of silicon at much lower costs, known as the horizontal ribbon growth (HRG) process, was put forth in the 70's and early 80's but was abandoned in favor of more traditional methods that were easier to develop. Accumulated advances in crystal growth modeling and understanding make it propitious to reconsider the HRG method for growing crystalline silicon for solar cells. If this process were successfully deployed, it could significantly reduce production costs for silicon substrate by dramatically increasing growth rates and by avoiding the costly kerf losses associated with cutting wafers from silicon ingots. In addition, HRG methods promise the growth of single-crystal material needed for solar cells of the highest efficiency, rather than multi-crystalline silicon currently produced by casting and vertical ribbon growth methods. A successful HRG process would be transformative by promoting simultaneous cost reductions and efficiency increases for silicon solar cells. The premise of the work proposed here is that the great potential of the horizontal ribbon growth method will not be realized until a more fundamental understanding of its mechanistic workings enables new progress in process development. Theoretical, thermal-capillary models will be developed and applied in conjunction with process experiments to assess the feasibility of the HRG process for the production of crystalline silicon for photovoltaic applications. These studies will allow for fundamental investigations of coupled heat transfer and interfacial processes (solidification and capillarity) in this crystal growth system.Intellectual merit of the proposed activity This work will develop and apply rigorous theoretical models to study the nonlinear interactions between thermal transport processes and interfacial phenomena that control silicon crystal production via the horizontal ribbon growth process. Of particular intellectual merit will be understanding the stability and dynamics of this system. Unlike vertical, meniscus-defined crystal growth processes that are inherently stable, the HRG process may be unstable, and its successful operation will likely rely on a thorough understanding of system design and control.Broader impacts resulting from the proposed activity This effort will advance discovery and understanding by training a graduate student in a multi-disciplinary and industrially relevant project. It will enhance infrastructure by promoting collaborations with industry. This work will directly impact process development at Ribbon Technology International, a company founded by Bleil, the originator of the horizontal ribbon growth (HRG) process. This interaction will leverage experimental observation with the theory conducted in this work. From a broader perspective, a successful HRG process could trigger a transformative enabling of current technology by simultaneously reducing silicon crystal production costs while improving solar cell efficiency. Dissemination activities will include an outreach program for the general public involving the Science Museum of Minnesota. This project is jointly funded by the Thermal Transport Processes (TTP) Program, of the Chemical, Bioengineering, Environmental, and Transport Systems (CBET) Division, by the Materials Processing & Manufacturing (MPM) Program, of the Civil, Mechanical, and Manufacturing Innovation (CMMI) Division, and by the Grant Opportunities for Academic Liaison with Industry (GOALI) Program, of the Industrial Innovation & Partnerships (IIP) Division, all within the Directorate for Engineering (ENG).
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GOALI: Manufacturing Large, Diamond Single Crystals via High-Pressure, High-Temperature Growth
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批准号:2308877
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项目类别:Standard Grant
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资助金额:$44.28万
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财政年份:2023
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负责人:Jeffrey Derby
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依托单位:
GOALI: Toward Improving Quality and Yield of Large-Area, Single-Crystal Sapphire Wafers via Fundamental Understanding of Bubble Engulfment During Growth
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批准号:1760689
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项目类别:Standard Grant
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资助金额:$40.31万
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财政年份:2018
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负责人:Jeffrey Derby
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依托单位:
Workshop: Ninth International Workshop on Modeling in Crystal Growth (IWMCG-9); Kailua-Kona, Hawaii; 21-24 October 2018
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批准号:1853512
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项目类别:Standard Grant
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资助金额:$1.0万
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财政年份:2018
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负责人:Jeffrey Derby
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依托单位:
Toward viable horizontal ribbon growth of solar silicon: Understanding and ameliorating process instabilities
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批准号:1336164
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项目类别:Standard Grant
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资助金额:$31.86万
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财政年份:2013
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负责人:Jeffrey Derby
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依托单位:
Collaborative Research: ARI-MA Development of Improved CMT and CZT Nuclear Detectors for Homeland Security Applications
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批准号:1140001
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项目类别:Standard Grant
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资助金额:$12.0万
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财政年份:2011
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负责人:Jeffrey Derby
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依托单位:
Materials World Network: Detached Bridgman Growth of Semiconductor Crystals
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批准号:1007885
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项目类别:Continuing Grant
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资助金额:$42.0万
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财政年份:2010
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负责人:Jeffrey Derby
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依托单位:
Sixth International Workshop on Modeling in Crystal Growth (IWMCG-6) to be held in Lake Geneva, WI, August 9-13, 2009
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批准号:0939445
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项目类别:Standard Grant
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资助金额:$1.5万
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财政年份:2009
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负责人:Jeffrey Derby
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依托单位:
Employing Convective Assembly for Micro-/Nano-Fabrication of Colloidal Crystals
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批准号:0726958
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项目类别:Standard Grant
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资助金额:$35.0万
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财政年份:2007
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负责人:Jeffrey Derby
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依托单位:
Growth of crystalline ZnO nanowires from solution: From theory to application
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批准号:0729924
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项目类别:Standard Grant
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资助金额:$17.71万
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财政年份:2007
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负责人:Jeffrey Derby
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依托单位:
ACT/SGER: Evaluation of a Novel Approach for Improved Growth of CdZnTe
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批准号:0345183
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项目类别:Standard Grant
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资助金额:$9.93万
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财政年份:2003
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负责人:Jeffrey Derby
-
依托单位:
GOALI: Modeling the Industrial Growth of CdZnTe Substrate Crystals
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批准号:0201486
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项目类别:Standard Grant
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资助金额:$43.83万
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财政年份:2002
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负责人:Jeffrey Derby
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依托单位:
Modeling the Growth of Crystals from Solution: Nonlinear Interactions of Kinetics and Transport
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批准号:0121467
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项目类别:Continuing Grant
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资助金额:$27.7万
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财政年份:2001
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负责人:Jeffrey Derby
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依托单位:
Modeling The Growth Of Crystals From Solution Via High Performance Computing
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批准号:9713044
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项目类别:Continuing Grant
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资助金额:$24.64万
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财政年份:1997
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负责人:Jeffrey Derby
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依托单位:
U.S.-European Workshop: Modelling in Crystal Growth, Durbuy, Belgium, October 1996
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批准号:9601049
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项目类别:Standard Grant
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资助金额:$2.14万
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财政年份:1996
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负责人:Jeffrey Derby
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依托单位:
Modeling Solution Crystal Growth Processes: Toward Three- Dimensional, Transient Simulations on Massively Parallel Supercomputers
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批准号:9218842
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项目类别:Continuing Grant
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资助金额:$14.65万
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财政年份:1993
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负责人:Jeffrey Derby
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依托单位:
Small Grants for Exploratory Research: Feasibility and Design of a Novel Sheet Growth Method for Single-Crystal Growth.
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批准号:9315980
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项目类别:Standard Grant
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资助金额:$2.5万
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财政年份:1993
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负责人:Jeffrey Derby
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依托单位:
Research Initiation Award: Reaction, Transport, and Geometry in Electrochemical Micromachining: A Moving- Boundary Analysis Via the Finite Element Method
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批准号:9009924
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项目类别:Standard Grant
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资助金额:$7.0万
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财政年份:1990
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负责人:Jeffrey Derby
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依托单位:
Presidential Young Investigator Award
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批准号:9058386
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项目类别:Continuing Grant
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资助金额:$31.25万
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财政年份:1990
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负责人:Jeffrey Derby
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依托单位:
国内基金
海外基金
Thermal-lag自由活塞斯特林发动机启动与可持续运行机理研究
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批准号:51806227
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项目类别:青年科学基金项目
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资助金额:24.0万元
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批准年份:2018
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负责人:牟健
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依托单位: