Toward viable horizontal ribbon growth of solar silicon: Understanding and ameliorating process instabilities
实现太阳能硅的可行水平带状生长:理解和改善工艺不稳定性
基本信息
- 批准号:1336164
- 负责人:
- 金额:$ 31.86万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2013
- 资助国家:美国
- 起止时间:2013-10-01 至 2018-09-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
CBET 1336164DerbyThe development of renewable energy may be the most important challenge for the future of human civilization. Low-cost and reliable solar-to-electric conversion methods are especially important toward this endeavor. Of these methods, by far the most established technology is based on the fabrication of solar cells from crystalline silicon. However, significant reduction in the cost per watt produced by these technologies is needed to make solar energy competitive with fossil fuels. For silicon-based solar cells, production costs must be decreased while maintaining or improving cell efficiency. Advances in silicon growth methods are needed to achieve these objectives. Solar-grade, crystalline silicon is produced by a variety of techniques that melt and carefully re-solidify silicon via thermal processes. Methods that grow single crystals of silicon, such as the Czochralski process, are expensive, but such material achieves the highest cell efficiencies. Lower-cost growth methods, such as casting and vertical ribbon growth, have been developed, but their multi-crystalline material results in cells of lower efficiency. A promising crystal growth technology, known as the horizontal ribbon growth (HRG) process, was put forth in the late 1960's and was subsequently advanced in the late 1970's and early 1980's in Japan and in the U.S. After encouraging early results, experimental advances and process development efforts stalled, and this technique was abandoned by the mid-1980's in favor of more traditional methods that were easier to develop. Recently, however, there has been renewed interest in the HRG method, since, if successful, it promises a win-win scenario of significantly reduced production costs coupled with the ability to grow high-quality, single-crystal material. However, significant advances in the understanding and optimization of this growth method are needed to make it viable as a large-scale production process for silicon solar cells.This research is aimed at making the horizontal ribbon growth of silicon viable, particularly by addressing failure modes associated with its unique geometry and operation. Specifically, this project will apply sophisticated computational models of the horizontal ribbon growth method to elucidate and ameliorate known process instabilities and to study the salient issues associated with increasing growth rates to further reduce production costs. This research will apply a computation-centric approach to probe these issues and ultimately optimize growth conditions. Thus, this research will address fundamental scientific issues of crystal growth together with a clear goal toward improving a material with important technological applications.
CBET 1336164德比可再生能源的发展可能是人类文明未来最重要的挑战。对于这一努力来说,低成本和可靠的太阳能到电力转换方法尤为重要。在这些方法中,到目前为止最成熟的技术是基于晶体硅制造太阳能电池。然而,需要大幅降低这些技术产生的每瓦特成本,才能使太阳能与化石燃料竞争。对于硅基太阳能电池,必须在保持或提高电池效率的同时降低生产成本。为了实现这些目标,需要在硅生长方法方面取得进展。太阳能级的结晶硅是通过各种技术生产的,这些技术通过热过程熔化并小心地重新凝固硅。生长硅单晶的方法,如Czochralski法,价格昂贵,但这种材料可以实现最高的电池效率。已经开发了成本较低的生长方法,如铸造和垂直带状生长,但它们的多晶体材料导致电池效率较低。20世纪60年代末S提出了一种很有前途的晶体生长技术,称为水平带状生长工艺,随后在日本和美国的70年代末S和80年代初S提出了这项技术。在取得了令人鼓舞的早期结果后,实验进展和工艺开发工作停滞不前,这项技术被S在20世纪80年代中期抛弃,转而采用更传统的更容易开发的方法。然而,最近人们对HRG方法重新产生了兴趣,因为如果成功,它有望实现双赢,显著降低生产成本,同时能够生长高质量的单晶材料。然而,需要在理解和优化这种生长方法方面取得重大进展,才能使其成为大规模生产硅太阳能电池的工艺。这项研究的目的是使水平带状硅生长可行,特别是通过解决与其独特的几何形状和操作相关的失效模式。具体地说,该项目将应用水平带状生长方法的复杂计算模型来阐明和改善已知的工艺不稳定性,并研究与提高生长速度相关的突出问题,以进一步降低生产成本。这项研究将应用以计算为中心的方法来探索这些问题,并最终优化增长条件。因此,这项研究将解决晶体生长的基本科学问题,并明确目标是改进具有重要技术应用的材料。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Jeffrey Derby其他文献
Jeffrey Derby的其他文献
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{{ truncateString('Jeffrey Derby', 18)}}的其他基金
GOALI: Manufacturing Large, Diamond Single Crystals via High-Pressure, High-Temperature Growth
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- 批准号:
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- 资助金额:
$ 31.86万 - 项目类别:
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$ 31.86万 - 项目类别:
Standard Grant
Workshop: Ninth International Workshop on Modeling in Crystal Growth (IWMCG-9); Kailua-Kona, Hawaii; 21-24 October 2018
研讨会:第九届晶体生长建模国际研讨会(IWMCG-9);
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Standard Grant
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