Toward viable horizontal ribbon growth of solar silicon: Understanding and ameliorating process instabilities
Toward viable horizontal ribbon growth of solar silicon: Understanding and ameliorating process instabilities
批准号:
1336164
负责人:
Jeffrey Derby
金额:
$31.86万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-10-01 至 2018-09-30
中文摘要
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英文摘要
CBET 1336164DerbyThe development of renewable energy may be the most important challenge for the future of human civilization. Low-cost and reliable solar-to-electric conversion methods are especially important toward this endeavor. Of these methods, by far the most established technology is based on the fabrication of solar cells from crystalline silicon. However, significant reduction in the cost per watt produced by these technologies is needed to make solar energy competitive with fossil fuels. For silicon-based solar cells, production costs must be decreased while maintaining or improving cell efficiency. Advances in silicon growth methods are needed to achieve these objectives. Solar-grade, crystalline silicon is produced by a variety of techniques that melt and carefully re-solidify silicon via thermal processes. Methods that grow single crystals of silicon, such as the Czochralski process, are expensive, but such material achieves the highest cell efficiencies. Lower-cost growth methods, such as casting and vertical ribbon growth, have been developed, but their multi-crystalline material results in cells of lower efficiency. A promising crystal growth technology, known as the horizontal ribbon growth (HRG) process, was put forth in the late 1960's and was subsequently advanced in the late 1970's and early 1980's in Japan and in the U.S. After encouraging early results, experimental advances and process development efforts stalled, and this technique was abandoned by the mid-1980's in favor of more traditional methods that were easier to develop. Recently, however, there has been renewed interest in the HRG method, since, if successful, it promises a win-win scenario of significantly reduced production costs coupled with the ability to grow high-quality, single-crystal material. However, significant advances in the understanding and optimization of this growth method are needed to make it viable as a large-scale production process for silicon solar cells.This research is aimed at making the horizontal ribbon growth of silicon viable, particularly by addressing failure modes associated with its unique geometry and operation. Specifically, this project will apply sophisticated computational models of the horizontal ribbon growth method to elucidate and ameliorate known process instabilities and to study the salient issues associated with increasing growth rates to further reduce production costs. This research will apply a computation-centric approach to probe these issues and ultimately optimize growth conditions. Thus, this research will address fundamental scientific issues of crystal growth together with a clear goal toward improving a material with important technological applications.
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批准号:2308877
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依托单位:
Workshop: Ninth International Workshop on Modeling in Crystal Growth (IWMCG-9); Kailua-Kona, Hawaii; 21-24 October 2018
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批准号:1853512
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项目类别:Standard Grant
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财政年份:2018
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Collaborative Research: ARI-MA Development of Improved CMT and CZT Nuclear Detectors for Homeland Security Applications
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批准号:1140001
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项目类别:Standard Grant
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资助金额:$12.0万
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财政年份:2011
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依托单位:
Materials World Network: Detached Bridgman Growth of Semiconductor Crystals
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批准号:1007885
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项目类别:Continuing Grant
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资助金额:$42.0万
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财政年份:2010
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负责人:Jeffrey Derby
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依托单位:
Sixth International Workshop on Modeling in Crystal Growth (IWMCG-6) to be held in Lake Geneva, WI, August 9-13, 2009
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批准号:0939445
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项目类别:Standard Grant
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资助金额:$1.5万
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财政年份:2009
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依托单位:
GOALI: Thermal-Capillary Analysis of the Horizontal Ribbon Growth of Solar Silicon via Finite-Element Process Models
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批准号:0755030
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项目类别:Standard Grant
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资助金额:$30.71万
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财政年份:2008
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负责人:Jeffrey Derby
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依托单位:
Employing Convective Assembly for Micro-/Nano-Fabrication of Colloidal Crystals
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批准号:0726958
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项目类别:Standard Grant
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资助金额:$35.0万
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财政年份:2007
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负责人:Jeffrey Derby
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依托单位:
Growth of crystalline ZnO nanowires from solution: From theory to application
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批准号:0729924
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项目类别:Standard Grant
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资助金额:$17.71万
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财政年份:2007
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负责人:Jeffrey Derby
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依托单位:
ACT/SGER: Evaluation of a Novel Approach for Improved Growth of CdZnTe
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批准号:0345183
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项目类别:Standard Grant
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资助金额:$9.93万
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财政年份:2003
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负责人:Jeffrey Derby
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依托单位:
GOALI: Modeling the Industrial Growth of CdZnTe Substrate Crystals
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批准号:0201486
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项目类别:Standard Grant
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资助金额:$43.83万
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财政年份:2002
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负责人:Jeffrey Derby
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依托单位:
Modeling the Growth of Crystals from Solution: Nonlinear Interactions of Kinetics and Transport
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批准号:0121467
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项目类别:Continuing Grant
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资助金额:$27.7万
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财政年份:2001
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负责人:Jeffrey Derby
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依托单位:
Modeling The Growth Of Crystals From Solution Via High Performance Computing
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批准号:9713044
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项目类别:Continuing Grant
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资助金额:$24.64万
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财政年份:1997
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负责人:Jeffrey Derby
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依托单位:
U.S.-European Workshop: Modelling in Crystal Growth, Durbuy, Belgium, October 1996
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批准号:9601049
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项目类别:Standard Grant
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资助金额:$2.14万
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财政年份:1996
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负责人:Jeffrey Derby
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依托单位:
Modeling Solution Crystal Growth Processes: Toward Three- Dimensional, Transient Simulations on Massively Parallel Supercomputers
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批准号:9218842
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项目类别:Continuing Grant
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资助金额:$14.65万
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财政年份:1993
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负责人:Jeffrey Derby
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依托单位:
Small Grants for Exploratory Research: Feasibility and Design of a Novel Sheet Growth Method for Single-Crystal Growth.
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批准号:9315980
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项目类别:Standard Grant
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资助金额:$2.5万
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财政年份:1993
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负责人:Jeffrey Derby
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依托单位:
Research Initiation Award: Reaction, Transport, and Geometry in Electrochemical Micromachining: A Moving- Boundary Analysis Via the Finite Element Method
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批准号:9009924
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项目类别:Standard Grant
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资助金额:$7.0万
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财政年份:1990
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负责人:Jeffrey Derby
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依托单位:
Presidential Young Investigator Award
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批准号:9058386
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项目类别:Continuing Grant
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资助金额:$31.25万
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财政年份:1990
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负责人:Jeffrey Derby
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依托单位:
国内基金
海外基金
再生水系统中VBNC(Viable but nonculturable)病原菌复活机制与控制方法研究
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批准号:51178242
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项目类别:面上项目
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资助金额:61.0万元
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批准年份:2011
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负责人:李丹
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依托单位: