Local Vibrational Modes of Impurities in Semiconductors
Local Vibrational Modes of Impurities in Semiconductors
批准号:
0203832
负责人:
Matthew McCluskey
金额:
$36.07万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-05-15 至 2007-04-30
中文摘要
为了确定缺陷中心的结构及其与宿主环境的振动相互作用,本项目研究了GaN、ZnO、Si和CdTe等半导体的局域振动模式(LVM)光谱。氢、氧和DX中心等杂质将在这些具有重要技术意义的材料中进行研究。将使用静水压力、红外(IR)和拉曼光谱来探测由这些杂质引起的LVMS。除了无机半导体,还将研究并五苯等有机半导体。使用超快红外光谱的时间分辨实验将用于探测半导体中的振动寿命和共振相互作用。该项目涉及具有高度技术相关性的电子/光子材料科学专题领域的基础研究问题。该项目的一个重要特点是高度重视教育,并将研究与教育相结合。拟议的教育活动将使从八年级到研究生院的一系列学生受益。与研究相结合的教育计划包括与科尔维尔印第安人保留地的一所公立学校的外联活动,改善本科物理课程,以及发展实验室和讲座演示。开展这些活动是为了鼓励来自不同背景的学生进入与材料科学和固体物理相关的领域。
英文摘要
This project addresses local vibrational mode (LVM) spectroscopy of semiconductors such as GaN, ZnO, Si, and CdTe in order to determine the structure of defect centers and their vibrational interactions with the host environment. Impurities such as hydrogen, oxygen, and DX centers will be studied in these technologically important materials. Hydrostatic pressure will be used, with infrared (IR) and Raman spectroscopy, to probe the LVMs arising from such impurities. In addition to inorganic semiconductors, organic semiconductors such as pentacene will also be investigated. Time-resolved experiments using ultrafast IR spectroscopy will be used to probe vibrational lifetimes and resonant interactions in semiconductors. The project addresses fundamental research issues in a topical area of electronic/photonic materials science having high technological relevance. An important feature of the project is the strong emphasis on education, and the integration of research and education. The proposed educational activities will benefit a range of students from the eighth grade to graduate school. Educational programs integrated with research include outreach activities with a public school on the Colville Indian reservation, improvements to undergraduate physics courses, and the development of laboratories and lecture demonstrations. These activities are pursued to encourage students from diverse backgrounds to enter fields related to materials science and solid-state physics.
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科研奖励(0)
会议论文
Persistent Optical Phenomena in Oxide Semiconductors
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批准号:2335744
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项目类别:Continuing Grant
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资助金额:$47.39万
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财政年份:2024
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负责人:Matthew McCluskey
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依托单位:
Persistent photoconductivity in titanate semiconductor crystals
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批准号:2109334
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财政年份:2021
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负责人:Matthew McCluskey
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依托单位:
Persistent Photoconductivity in Strontium Titanate and Related Oxides
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批准号:1561419
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项目类别:Standard Grant
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资助金额:$39.86万
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财政年份:2016
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负责人:Matthew McCluskey
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依托单位:
Dynamics of Localized Photoexcitations in Condensed Matter Systems
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批准号:1106379
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项目类别:Continuing Grant
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资助金额:$37.5万
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财政年份:2011
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负责人:Matthew McCluskey
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依托单位:
Hydrogen in Zinc Oxide and Related Materials
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批准号:1004804
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项目类别:Continuing Grant
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资助金额:$42.0万
-
财政年份:2010
-
负责人:Matthew McCluskey
-
依托单位:
2008 Defects in Semiconductors Gordon Conference; New London, NH; August 3-8, 2008
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批准号:0804191
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项目类别:Standard Grant
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资助金额:$0.6万
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财政年份:2008
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负责人:Matthew McCluskey
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依托单位:
Vibrational Spectroscopy of Defects in Zinc Oxide
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批准号:0704163
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2007
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负责人:Matthew McCluskey
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依托单位:
REU Site: Extreme Matter
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批准号:0649023
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项目类别:Continuing Grant
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资助金额:$24.0万
-
财政年份:2007
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负责人:Matthew McCluskey
-
依托单位:
2006 Defects in Semiconductors Gordon Conference; New London, NH; July 2-7, 2006
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批准号:0625454
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项目类别:Standard Grant
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资助金额:$0.5万
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财政年份:2006
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负责人:Matthew McCluskey
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依托单位:
Hydrogen in Compound Semidconductors
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批准号:9901625
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项目类别:Standard Grant
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资助金额:$15.38万
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财政年份:1999
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负责人:Matthew McCluskey
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依托单位:
海外基金