Hydrogen in Compound Semidconductors

该项目详细介绍了在高压下使用振动光谱法研究半导体中H的键合和钝化活性。结合振动光谱的流体静压将被用来提供新的信息和理解的化合物半导体材料中的几个含氢的缺陷复合物。将测量InP和GaP中C-H伸缩模的压力依赖性，并与GaAs进行比较。压力引起的局域振动模（LVM）频率的移动强烈依赖于氢原子的局域环境。在GaN：Mg，H复合物中，这些实验将试图区分键中心和反键N-H构型。此外，我们也将研究GaSb中S-H复合物的局域振动模式。霍尔效应测量将用于退火材料之前和之后的研究，以确定自由载流子的迁移率和浓度。该项目解决了材料科学领域的基础研究问题，具有潜在的技术相关性。该研究将在基础水平上贡献基础材料科学知识，这将与先进电子设备/电路的性能相关。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。 ***

This project addresses details of bonding and passivation activity of H in semiconductors using vibrational spectroscopy at high pressures. Hydrostatic pressure in conjunction with vibrational spectroscopy will be used to provide new information and understanding of several hydrogen-containing defect complexes in compound semiconductor materials. The pressure dependence of C-H stretch modes in InP and GaP will be measured and compared to GaAs. Pressure-induced shifts of local vibrational mode (LVM) frequencies are strongly dependent on the local environment of the hydrogen atom. In the GaN:Mg,H complex, these experiments will attempt to distinguish between bond-centered and antibonding N-H configurations. Local vibrational modes of S-H complexes in GaSb will also be investigated. Hall effect measurements will be used in the study before and after annealing materials to determine mobility and concentration of free carriers. %%%The project addresses basic research issues in a topical area of materials science having potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level which will be relevant to performance of advanced electronic devices/circuits. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***