Hydrogen in Compound Semidconductors

本项目利用振动光谱学研究高压下H在半导体中的键合和钝化活性。静水压力与振动光谱学的结合将为化合物半导体材料中几种含氢缺陷配合物提供新的信息和理解。将测量InP和GaP中C-H拉伸模式的压力依赖性，并与GaAs进行比较。局域振动模（LVM）频率的压力诱发位移强烈依赖于氢原子的局域环境。在GaN:Mg，H配合物中，这些实验将尝试区分键中心和反键N-H构型。还将研究GaSb中S-H配合物的局部振动模式。霍尔效应测量将用于研究退火前后的材料，以确定迁移率和自由载流子的浓度。该项目涉及材料科学主题领域的基础研究问题，具有潜在的技术相关性。该研究将在基础水平上贡献基础材料科学知识，这将与先进电子器件/电路的性能相关。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊

This project addresses details of bonding and passivation activity of H in semiconductors using vibrational spectroscopy at high pressures. Hydrostatic pressure in conjunction with vibrational spectroscopy will be used to provide new information and understanding of several hydrogen-containing defect complexes in compound semiconductor materials. The pressure dependence of C-H stretch modes in InP and GaP will be measured and compared to GaAs. Pressure-induced shifts of local vibrational mode (LVM) frequencies are strongly dependent on the local environment of the hydrogen atom. In the GaN:Mg,H complex, these experiments will attempt to distinguish between bond-centered and antibonding N-H configurations. Local vibrational modes of S-H complexes in GaSb will also be investigated. Hall effect measurements will be used in the study before and after annealing materials to determine mobility and concentration of free carriers. %%%The project addresses basic research issues in a topical area of materials science having potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level which will be relevant to performance of advanced electronic devices/circuits. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***