2008 Defects in Semiconductors Gordon Conference; New London, NH; August 3-8, 2008

技术。关于半导体缺陷的Gordon研究会议将于2008年8月3-8日在新罕布什尔州新伦敦的Colby-Sawyer学院举行。会议的目标是促进对均匀和结构半导体中缺陷和缺陷相关现象的基本理解。这些缺陷是在电子材料的生长和/或加工过程中发生或引入的。会议将为大学、政府和工业科学家之间的互动提供一个论坛。主题包括ZnO， GaN，金刚石和有机半导体在生长和加工过程中的缺陷控制；在Si、SiC和GaN的异质外延生长过程中出现的界面缺陷；并讨论原子尺度成像技术，结合最先进的理论方法解决基本的原子水平的缺陷机制。有争议和/或前瞻性的话题将被强调。会议讨论了广泛的块状和纳米级电子材料中的缺陷，以帮助推进对新兴材料（如宽带隙半导体和掺杂纳米颗粒）的基本理解。非技术。这次会议的一个重要影响将是增加来自代表性不足群体的年轻科学家的出席率。戈登会议的设置和形式鼓励多层次的互动，以及高级员工和职业生涯早期的员工之间的互动。将努力使妇女和少数民族更好地参与与电子材料有关的领域。除了有机会评估该领域和未来方向外，预计还将在大学、研究机构和产业界之间建立新的联系。申请的NSF资金将用于促进年轻教师、博士后研究助理和研究生参加会议。

Technical. A Gordon Research Conference on Defects in Semiconductors will be held at Colby-Sawyer College in New London, NH, August 3-8, 2008. The goal of the conference is to promote fundamental understanding of defects and defect-related phenomena in homogeneous and structured semiconductors. These defects occur, or are introduced, during growth and/or processing of electronic materials. The conference will provide a forum for interaction between university, government and industrial scientists. Topics include control of defects in ZnO, GaN, diamond, and organic semiconductors during growth and processing; interface defects that occur during heteroepitaxial growth of Si, SiC, and GaN; and discussions of atomic-scale imaging techniques, combined with state-of-the-art theoretical methods addressing fundamental atomic-level mechanisms of defects. Topics that are controversial and/or forward-looking will be emphasized. The conference deals with defects in a broad range of bulk and nanoscale electronic materials to assist advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors and doped nanoparticles. Non-technical. An important impact of this conference will be to increase the attendance of young scientists from underrepresented groups. Gordon conference setting and format encourage interactions on multiple levels, and among senior staff and those early in their careers. Efforts will be made to improve the inclusion of women and minorities in fields related to electronic materials. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established among universities, research institutions, and industry. The requested NSF funds will be used to facilitate participation in the meeting by young faculty, postdoctoral research associates and graduate students.