2008 Defects in Semiconductors Gordon Conference; New London, NH; August 3-8, 2008

2008 年半导体缺陷戈登会议；

• 批准号: 0804191
• 负责人: Matthew McCluskey
• 金额: $ 0.6万
• 依托单位: Gordon Research Conferences
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-07-01 至 2009-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0804191&HistoricalAwards=false
• 关键词: 2008; Defects; Semiconductors; Gordon; Conference

Technical. A Gordon Research Conference on Defects in Semiconductors will be held at Colby-Sawyer College in New London, NH, August 3-8, 2008. The goal of the conference is to promote fundamental understanding of defects and defect-related phenomena in homogeneous and structured semiconductors. These defects occur, or are introduced, during growth and/or processing of electronic materials. The conference will provide a forum for interaction between university, government and industrial scientists. Topics include control of defects in ZnO, GaN, diamond, and organic semiconductors during growth and processing; interface defects that occur during heteroepitaxial growth of Si, SiC, and GaN; and discussions of atomic-scale imaging techniques, combined with state-of-the-art theoretical methods addressing fundamental atomic-level mechanisms of defects. Topics that are controversial and/or forward-looking will be emphasized. The conference deals with defects in a broad range of bulk and nanoscale electronic materials to assist advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors and doped nanoparticles. Non-technical. An important impact of this conference will be to increase the attendance of young scientists from underrepresented groups. Gordon conference setting and format encourage interactions on multiple levels, and among senior staff and those early in their careers. Efforts will be made to improve the inclusion of women and minorities in fields related to electronic materials. Along with the opportunity to assess the field and future directions, it is expected that new ties will be established among universities, research institutions, and industry. The requested NSF funds will be used to facilitate participation in the meeting by young faculty, postdoctoral research associates and graduate students.

技术.戈登半导体缺陷研究会议将于2008年8月3日至8日在新罕布什尔州新伦敦的科尔比索耶学院举行。会议的目标是促进对均匀和结构化半导体中缺陷和缺陷相关现象的基本理解。这些缺陷在电子材料的生长和/或加工期间发生或被引入。会议将为大学、政府和工业科学家之间的互动提供一个论坛。主题包括ZnO，GaN，金刚石和有机半导体在生长和加工过程中的缺陷控制; Si，SiC和GaN异质外延生长过程中发生的界面缺陷;以及原子级成像技术的讨论，结合最先进的理论方法解决基本的原子级缺陷机制。具有争议性和/或前瞻性的主题将得到强调。该会议涉及广泛的块状和纳米级电子材料的缺陷，以帮助推进对宽带隙半导体和掺杂纳米颗粒等新兴材料的基本理解。非技术性的。这次会议的一个重要影响将是增加代表性不足群体的青年科学家的出席人数。戈登会议的设置和形式鼓励多层次的互动，以及高级员工和职业生涯早期的员工之间的互动。将努力使妇女和少数民族更多地参与电子材料相关领域的工作。沿着评估该领域和未来方向的机会，预计将在大学、研究机构和工业界之间建立新的联系。申请的NSF资金将用于促进年轻教师、博士后研究助理和研究生参加会议。