Local and Non-local Magnetic Moments in Semiconductors

半导体中的局部和非局部磁矩

• 批准号: 0203907
• 负责人: Frances Hellman
• 金额: $ 30万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-05-01 至 2005-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0203907&HistoricalAwards=false
• 关键词: Local; Non; local; Magnetic; Moments

This individual investigator award will provide support for a project that will investigate the effect of adding magnetic moments to semiconductors. Amorphous Si, Ge, and C doped with magnetic ions such as rare earth elements and Mn will be prepared and their electronic, magnetic, thermodynamic, and structural properties measured. The influence of the phonon stiffness and the semiconductor band gap on these properties will be determined. The interaction between these added local moments and the spontaneous moments formed at the Metal-Insulator transition as electrons localize will be studied. The research will provide a phenomenological underpinning for a microscopic model for the three dimensional Metal-Insulator transition, and an understanding of the effect on both transport and magnetic properties of introducing local magnetic moments into a semiconductor. The project will provide research training and education for two graduate students and an estimated 5-6 undergraduates, including exposure to industry through the PI's connections with the Center for Magnetic Recording Research at UCSD and to two National Labs, the National High Magnetic Field Lab and Los Alamos.Magnetic moments play a crucial role in many materials (e.g. the high Tc superconductors and the colossal magnetoresistance manganites). It is known that adding magnetic moments to semiconductors produces effects that are extremely large, but these effects are not well understood. In particular the change in the electrical resistance when such a material is placed in a magnetic field (magnetoresistance) can be enormous. This project will investigate the effect of adding magnetic moments to semiconductors. Samples of amorphous Si, Ge, and C doped with magnetic ions such as rare earth elements and Mn will be prepared. Their electronic, magnetic, thermodynamic, and structural properties will be measured over a wide range of temperature, magnetic field, and doping levels. The research will attempt to determine the principles governing the large effect of magnetic moments in amorphous semiconductors. An increased understanding of these effects may point the way to making the very large magnetoresistance of use to the developing spin electronics technology. In addition this research may increase our understanding of why magnetic moments play such a crucial role in other materials of current interest. The project will provide research training and education for two graduate students and an estimated 5-6 undergraduates, including providing them with an exposure to industry and to the national labs through the PI's collaborations. Thus, they will be well prepared for future careers in academia, or industrial or government laboratories.

这个个人研究者奖将为一个项目提供支持，该项目将调查向半导体添加磁矩的影响。将制备掺杂有磁性离子如稀土元素和Mn的非晶Si、Ge和C，并测量它们的电子、磁性、热力学和结构性质。声子刚度和半导体带隙对这些属性的影响将被确定。这些增加的本地时刻和自发的时刻之间的相互作用形成的金属-绝缘体转变为电子本地化将被研究。该研究将为三维金属-绝缘体转变的微观模型提供唯象基础，并了解将局部磁矩引入半导体对输运和磁性的影响。该项目将为两名研究生和大约5-6名本科生提供研究培训和教育，包括通过PI与UCSD磁记录研究中心和两个国家实验室的联系接触行业，磁矩在许多材料（如高温超导体和巨磁阻锰氧化物）中起着至关重要的作用。众所周知，在半导体中加入磁矩会产生非常大的效应，但这些效应还没有得到很好的理解。特别地，当这种材料被放置在磁场中时，电阻的变化（磁阻）可能是巨大的。本项目将研究向半导体添加磁矩的效果。将制备掺杂有磁性离子如稀土元素和Mn的非晶Si、Ge和C的样品。它们的电子，磁性，热力学和结构特性将在很宽的温度，磁场和掺杂水平范围内进行测量。这项研究将试图确定非晶半导体中磁矩大效应的原理。对这些效应的进一步理解可能为发展中的自旋电子学技术提供非常大的磁阻效应。此外，这项研究可能会增加我们对为什么磁矩在当前感兴趣的其他材料中发挥如此重要作用的理解。该项目将为两名研究生和大约5-6名本科生提供研究培训和教育，包括通过PI的合作为他们提供工业和国家实验室的机会。因此，他们将为未来在学术界，工业或政府实验室的职业生涯做好准备。