Controlling and quantifying two-level systems, disorder and ideality in vapor deposited amorphous thin films
Controlling and quantifying two-level systems, disorder and ideality in vapor deposited amorphous thin films
批准号:
1809498
负责人:
Frances Hellman
金额:
$48.09万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2018
资助国家:
美国
项目状态:
已结题
起止时间:
2018-09-15 至 2024-05-31
中文摘要
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英文摘要
Non-Technical SummaryAmorphous materials lack structural order, making them difficult to describe and making it difficult to calculate and predict their properties compared to crystalline materials which consist of spatially repeated atoms. This lack of understanding, however, does not prevent the important applications possible or the scientific impact of amorphous materials; plastics, silicate glasses, and amorphous silicon photovoltaics are examples that are pertinent to daily life, industry, and technologies. Amorphous superconductors are a remarkable example of how a fundamental scientific property transcends structural imperfection. The properties of an amorphous material depend strongly on how it was produced, and there are some well-defined known defects, but it is not clear how to describe the different amorphous structures produced by different methods, even for a single element material, nor what the nature of a defect is in a fully disordered material. Disorder exists on different length and energy scales, ranging from local, atomic-sized disorder to larger scales. Intriguingly, there exists the notion of an "ideal glass", which while remaining thoroughly disordered, lacks imperfections in that disorder and thus approaches the uniqueness of a crystal, including reproducibility and predictability of its properties. The project will look at two types of materials, one a classic semiconductor alloy and the other a strongly bonded oxide, and determine the relationship between types of disorder and defects produced by different preparation methods and for different atoms, and the tunability of the "ideality" of disordered materials. The work will create an enhanced understanding of what causes mechanical and dielectric losses in technologically important amorphous materials and how to control these. More broadly, it will yield improved understanding and control of amorphous materials of technological and fundamental scientific significance. The project will also educate and train students and help to increase diversity participation in science; the PI and her research group actively engage in efforts to make physics accessible to underrepresented STEM ethnic and socioeconomic minorities. Technical SummaryIn more detail, this project will look at understanding order within a completely disordered (amorphous) material, and will provide insight into how vapor deposition enables creation of ultrastable glasses with low density of tunneling states (TLS), and for which materials this process works. Recent experiments show that two extremely different vapor deposited materials (indomethacin and silicon) form ultrastable glasses with enthalpy near the corresponding crystal and with a low density of tunneling states, strongly suggestive that these are close to ideal glasses. The proposed work will use two classes of amorphous materials to test the hypothesis that ultrastability is achieved by vapor deposition only when growth is done near the Kauzmann temperature TK, at which the ideal glass is theoretically produced, and only if there is sufficient surface atomic mobility. If true, this would open the door to the creation of other near-ideal low loss glasses and give insight on the nature of the elusive ideal glass state in different materials. The hypothesis that ideal glasses inherently have strongly suppressed TLS will also be tested. The many proposed characterization studies will give insights about defects, TLS, and stability of amorphous materials, and will hopefully point toward generalizable structural features that herald the presence or absence of TLS. The proposed materials directly impact many aspects of technology including dielectrics for tunnel barriers, phase change memories (a-Ge and related alloys), ultra-fast time-of-flight radiation detection (a-Se), and flash memories, catalysis, quantum computing, and high-k dielectrics in transistors and superconducting qubits (a-Al2O3).This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
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Structural tunability and origin of two-level systems in amorphous silicon
非晶硅中两能级系统的结构可调性和起源
DOI:
10.1103/physrevmaterials.6.045604
发表时间:
2022
期刊:
Physical Review Materials
影响因子:
3.4
作者:
[Jacks, H. C., Molina-Ruiz, M., Weber, M. H., Maldonis, J. J., Voyles, P. M., Abernathy, M. R., Metcalf, T. H., Liu, X., Hellman, F.]
通讯作者:
Hellman, F.
Two-level systems and growth-induced metastability in hydrogenated amorphous silicon
氢化非晶硅中的两能级系统和生长诱导的亚稳态
DOI:
10.1088/2053-1591/abb498
发表时间:
2020
期刊:
Materials Research Express
影响因子:
2.3
作者:
[Molina-Ruiz, M., Jacks, H. C., Queen, D. R., Wang, Q., Crandall, R. S., Hellman, F.]
通讯作者:
Hellman, F.
Temperature effects on the structure and mechanical properties of vapor deposited a-SiO2
温度对气相沉积a-SiO2结构和力学性能的影响
DOI:
10.1016/j.jnoncrysol.2022.121588
发表时间:
2022
期刊:
Journal of Non-Crystalline Solids
影响因子:
3.5
作者:
[Jambur, V., Molina-Ruiz, M., Dauer, T., Horton-Bailey, D., Vallery, R., Gidley, D., Metcalf, T.H., Liu, X., Hellman, F., Szlufarska, I.]
通讯作者:
Szlufarska, I.
Origin of mechanical and dielectric losses from two-level systems in amorphous silicon
非晶硅两能级系统机械和介电损耗的起源
DOI:
10.1103/physrevmaterials.5.035601
发表时间:
2021
期刊:
Physical Review Materials
影响因子:
3.4
作者:
[Molina-Ruiz, M., Rosen, Y. J., Jacks, H. C., Abernathy, M. R., Metcalf, T. H., Liu, X., DuBois, J. L., Hellman, F.]
通讯作者:
Hellman, F.
Decoupling between propagating acoustic waves and two-level systems in hydrogenated amorphous silicon
氢化非晶硅中传播声波与两能级系统之间的解耦
DOI:
10.1103/physrevb.104.024204
发表时间:
2021
期刊:
Physical Review B
影响因子:
3.7
作者:
[Molina-Ruiz, M., Jacks, H. C., Queen, D. R., Metcalf, T. H., Liu, X., Hellman, F.]
通讯作者:
Hellman, F.
共 7 条
Collaborative Research: Center for Coatings Research
-
批准号:2309290
-
项目类别:Continuing Grant
-
资助金额:$35.35万
-
财政年份:2023
-
负责人:Frances Hellman
-
依托单位:
Collaborative Research: LSC Center for Coatings Research
-
批准号:2011719
-
项目类别:Standard Grant
-
资助金额:$54.13万
-
财政年份:2020
-
负责人:Frances Hellman
-
依托单位:
Controlling and quantifying two-level systems, disorder and ideality in tetrahedrally bonded amorphous thin films
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批准号:1508828
-
项目类别:Continuing Grant
-
资助金额:$45.14万
-
财政年份:2015
-
负责人:Frances Hellman
-
依托单位:
Controlling and Quantifying Two-Level Systems, Disorder and Ideality in Tetrahedrally Bonded Amorphous Thin Films
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批准号:1411315
-
项目类别:Standard Grant
-
资助金额:$16.49万
-
财政年份:2014
-
负责人:Frances Hellman
-
依托单位:
AGEP-T-Collaborative Research: California Alliance for Graduate Education and the Professoriate
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批准号:1306747
-
项目类别:Standard Grant
-
资助金额:$131.7万
-
财政年份:2013
-
负责人:Frances Hellman
-
依托单位:
Thermodynamics of Amorphous and Nanocrystalline Si and Si:H Thin Films
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批准号:0907724
-
项目类别:Continuing Grant
-
资助金额:$37.5万
-
财政年份:2009
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负责人:Frances Hellman
-
依托单位:
Magnetic Moments in Amorphous Semiconductors
-
批准号:0505524
-
项目类别:Standard Grant
-
资助金额:$0.0万
-
财政年份:2005
-
负责人:Frances Hellman
-
依托单位:
Local and Non-local Magnetic Moments in Semiconductors
-
批准号:0509184
-
项目类别:Standard Grant
-
资助金额:$0.0万
-
财政年份:2004
-
负责人:Frances Hellman
-
依托单位:
Local and Non-local Magnetic Moments in Semiconductors
-
批准号:0203907
-
项目类别:Standard Grant
-
资助金额:$30.0万
-
财政年份:2002
-
负责人:Frances Hellman
-
依托单位:
Electron Correlations at the Edge of Instability: Complex Materials and Restricted Geometries
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批准号:9705300
-
项目类别:Continuing Grant
-
资助金额:$41.5万
-
财政年份:1997
-
负责人:Frances Hellman
-
依托单位:
Development of Instrumentaton for Microcalorimetry of Biological Systems
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批准号:9513629
-
项目类别:Continuing Grant
-
资助金额:$27.86万
-
财政年份:1996
-
负责人:Frances Hellman
-
依托单位:
In Situ Determination of Thermodynamic, Magnetic, and Transport Properties of Doped and Undoped Thin Film C60
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批准号:9208599
-
项目类别:Continuing Grant
-
资助金额:$66.15万
-
财政年份:1992
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负责人:Frances Hellman
-
依托单位:
Apparatus for In Situ Measurements of the Physical Properties of Disordered Magnetic Thin Films
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批准号:9109004
-
项目类别:Standard Grant
-
资助金额:$6.0万
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财政年份:1991
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负责人:Frances Hellman
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依托单位:
US-Federal Republic of Germany Cooperative Research: Thermodynamics and Short-Range Order in Amorphous Rare Earth - Transition Metal Alloys
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批准号:8901211
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项目类别:Standard Grant
-
资助金额:$1.14万
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财政年份:1989
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负责人:Frances Hellman
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依托单位:
Investigation into Feasibility of Measuring Specific Heat from 50K to 700K of Thin Films of Magnetic and Superconducting Materials
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批准号:8810374
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项目类别:Standard Grant
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资助金额:$2.1万
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财政年份:1988
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负责人:Frances Hellman
-
依托单位:
海外基金